1MX4 DRAM SIMM Search Results

Contextual Info: Preliminary DRAM MODULE_ KMM5362203BW/BWG KMM5362203BW/BWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203BW is a 2M bit x 36 Dynamic RAM high density memory module. The

tb41

Contextual Info: DRAM MODULE KMM5362203AW/AWG KMM5362203AW/AWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203AW is a 2M bit x 36 • Part Identification Dynam ic RAM high density m em ory module. The

ODQ35

Abstract: KM44C1003CJ
Contextual Info: Preliminary KMM5362203BW/BWG DRAM MODULE KMM5362203BW/BWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203BW is a 2M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5362203BW consists of four CMOS

1Mx4

Contextual Info: DRAM MODULE 4 Mega Byte KMM5361203W/WG Fast Page Mode 1Mx36 DRAM SIMM , 1K Refresh, 5V Using 1Mx16 B/W DRAM and 1Mx4 Quad CAS DRAM GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM5361203W is a 1M bit x 32 Dynamic RAM high density memory module The

KM416C1200AJ

Abstract: km44c1003cj kmm5361203aw
Contextual Info: DRAM MODULE 4 Mega Byte KMM5361203AW/AWG Fast Page Mode 1Mx36 DRAM SIMM , 1K Refresh, 5V Using 1Mx16 B/W DRAM and 1Mx4 Quad CAS DRAM GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM5361203AW is a 1M bit x 36 Dynamic RAM high density memory module. The

we 510

Abstract: UG9M
Contextual Info: UG9M13621DBG T 4M Bytes (1M x 36 ) DRAM w/Parity 72Pin SIMM based on 1M X 4 General Description Features The UG9M13621DBG(T) is a 1,048,576 bits by 36 SIMM module.The UG9M13621DBG(T) is assembled using 8 pcs of 1Mx4 1K refresh in 300mil package, and 1 pc of 1Mx4 Quad-CAS

Contextual Info: UG18M23601DBG T 8M Bytes (2M x 36) DRAM 72Pin SIMM w/Parity based on 1M X 4 General Description Features The UG18M23601DBG(T) is a 2,097,152 bits by 36 SIMM module.The UG18M23601DBG(T) is assembled using 16 pcs of 1Mx4 1K refresh DRAMs 2 pcs of 1Mx4 Quad-CAS DRAMs mounted

km44c1003cj

Contextual Info: Preliminary KMM5361203BW/BWG DRAM MODULE KMM5361203BW/BWG Fast Page Mode 1Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM G EN E R A L D ESCRIPTIO N The Samsung KMM5361203BW is a 1M bit x 36 Dynamic RAM high density memory module. The FEATURES

km44c1003cj

Contextual Info: DRAM MODULE KMM5361203AW/AWG KMM5361203AW/AWG Fast Page Mode 1Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM G EN ERA L D ESCRIPTIO N FEATURES The Samsung KMM5361203AW is a 1M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5361203AW consists of two CMOS

1Mx4 dram simm

Abstract: UG9M
Contextual Info: UG9M13601DBG T 4M Bytes (1M x 36) DRAM w/Parity 72Pin SIMM based on 1M X 4 General Description Features The UG9M13601DBG(T) is a 1,048,576 bits by 36 SIMM module.The UG9M13601DBG(T) is assembled using 8 pcs of 1Mx4 1K refresh in 300mil package, and 1 pc of 1Mx4 Quad-CAS

Contextual Info: Preliminary KMM5361203BW/BWG DRAM MODULE KMM5361203BW/BWG Fast Page Mode 1Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Sam sung KM M 5361203BW is a 1M bit x 36 • Part Identification Dynam ic RAM high density m em ory module. The

Contextual Info: UG18M23621DBG T 8M Bytes (2M x 36) DRAM 72Pin SIMM w/Parity based on 1M X 4 General Description Features The UG18M23621DBG(T) is a 2,097,152 bits by 36 SIMM module.The UG18M23621DBG(T) is assembled using 16 pcs of 1Mx4 1K refresh DRAMs 2 pcs of 1Mx4 Quad-Cas DRAMs mounted

KMM5362203AW-6

Abstract: kmm5362203aw
Contextual Info: DRAM MODULE 8 Mega Byte KMM5362203AW/AWG Fast Page Mode 7 2Mx36 DRAM SIMM , 1K Refresh, 5V Using 1 Mx16 B/W DRAM and 1Mx4 Quad CAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203AW is a 2M bit x 36 Dynamic RAM high density memory module. The • Performance Range:

KMM5361000

Abstract: "soj 26" dram 80 ns G392
Contextual Info: KMM536100QA/AG/A1 /A1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361 OOOA is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung KMM5361 OOOA consist of eight CMOS 1MX4 bit

KM48C2100AJ

Contextual Info: DRAM MODULE y 8 Mega Byte KMM5362209AU/AUG Fast Page Mode 2Mx36 DRAM SIMM , 1K Refresh, 5V Using 2Mx8 B/W DRAM and 1Mx4 Quad CAS DRAM with AND Gate GENERAL DESCRIPTION FEATURES • Performance Range: The Sam sung K M M 5362209AU is a 2M bit x 36 Dynam ic RAM high de nsity m em ory module. The

Contextual Info: DRAM MODULE KMM5362203BW/BWG KMM5362203BW/BWG with Fast Page Mode 2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM5362203BW is a 2Mx36bits Dynamic RAM high density memory module. The Samsung KMM5362203BW consists of four CMOS 1Mx16bits DRAMs

KM416C1200AJ

Contextual Info: DRAM MODULE KM M5362203AW/AWG KM M5362203AW/AWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM G EN ERA L D ESC RIPTIO N FEATURES The Sam sung KMM5362203AW is a 2M bit x 36 Dynam ic RAM high density m em ory module. The Samsung KM M 5362203AW consists of four CMOS

km44c1000aj

Abstract: 581000A
Contextual Info: KMM581000AN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581OOOAN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KMM581 OOOAN consist of two 4M bit DRAMs KM44C1000AJ - 1MX4 in 20-pin SOJ package

KMM5322000-10

Abstract: KMM5322000
Contextual Info: KMM532200QAV/AVG DRAM MODULES 2M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM532200QAV is a 2M bitsx32 Dynamic RAM high, density memory module. The Samsung KMM5322000AV consist of sixteen CMOS 1Mx4 bit DRAMs in 20-pin SOJ package mounted on a 72-pin

Contextual Info: KMM5321000AV/AVG DRAM MODULES 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5321000AV is a 1M bitsx32 Dynamic RAM high density memory module. The Samsung KMM5321000AV consist of eight CMOS 1Mx4 bit DRAMs in 20-pin SOJ package mounted on a 72-pin

taa 440

Contextual Info: SMART SM5320140U1XUUU Modular Technologies November 19, 1996 4MByte 1M x 32 DRAM Module - 1Mx4 based 72-pin SIMM Features Part Numbers • • • • • • • • • • • SM532014001XUUU SM532014011XUUU SM532014081XUUU SM532014091XUUU Standard

Contextual Info: SMART SM5360140U1EUUU Modular Technologies November 12, 1996 4MByte 1M x 36 DRAM Module - 1Mx4 based 72-pin SIMM, ECC Features Part Numbers • • • • • • • • • • • SM536014001EUUU SM536014011EUUU SM536014081EUUU SM536014091EUUU Standard

UG6M23621PBG

Abstract: edo dram 50ns 72-pin simm DQ18-DQ25
Contextual Info: • UG6M23621PBG T 8M Bytes (2M x 36 ) DRAM 72Pin SIMM w/Parity based on 1M X 16 General Description Features The UG6M23621PBG(T) is a 2,097,152 bits by 36 SIMM module.The UG6M23621PBG(T) is assembled using 4 pcs of 1Mx16 1K refresh and 2 pcs of 1Mx4 Quad CAS DRAM SOJ package,

DS469

Abstract: TAA 762 72 simm function
Contextual Info: 2M x 36 Bit 5V FPM SIMM Fast Page Mode FPM DRAM SIMM 362006-S51m06JG 72 Pin 2Mx36 FPM SIMM Unbuffered, 1k Refresh, 5V Pin Assignment General Description The module is a 2Mx36 bit, 6 chip, 5V, 72 Pin SIMM module consisting of (4) 1Mx16 (SOJ) DRAM (2) 1Mx4 QUAD CAS DRAMs.