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    1M SYNCHRONOUS DRAM SAMSUNG Search Results

    1M SYNCHRONOUS DRAM SAMSUNG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54F163/B2A
    		Rochester Electronics LLC 54F163 - Binary Counter, 4-Bit Synchronous - Dual marked (M38510/34302B2A) PDF Buy
    54F161/BFA
    		Rochester Electronics LLC 54F161 - Binary Counter, 4-Bit Synchronous - Dual marked (M38510/34301BFA) PDF Buy
    54F161/B2A
    		Rochester Electronics LLC 54F161 - Binary Counter, 4-Bit Synchronous - Dual marked (M38510/34301B2A) PDF Buy
    54F161/BEA
    		Rochester Electronics LLC 54F161 - Binary Counter, 4-Bit Synchronous - Dual marked (M38510/34301BEA) PDF Buy
    54LS160A/BEA
    		Rochester Electronics LLC 54LS160 - DECADE COUNTER, 4-BIT SYNCHRONOUS - Dual marked (M38510/31503BEA) PDF Buy

    1M SYNCHRONOUS DRAM SAMSUNG Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K4S641632C

    Abstract: circuit diagram for auto on off
    Contextual Info: K4S641632C CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Jun. 1999 K4S641632C CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM


    Original     		K4S641632C 64Mbit 16Bit K4S641632C A10/AP circuit diagram for auto on off PDF

    K4S641632E-TC75

    Contextual Info: K4S641632E CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.2 Sept. 2001 K4S641632E CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM


    Original     		K4S641632E 64Mbit 16Bit K4S641632E A10/AP K4S641632E-TC75 PDF

    K4S64163

    Abstract: K4S641632E
    Contextual Info: K4S641632E CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Oct. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Oct. 2000 K4S641632E CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM


    Original     		K4S641632E 64Mbit 16Bit K4S641632E A10/AP K4S64163 PDF

    Contextual Info: K4S641632E CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Dec. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Dec. 2000 K4S641632E CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM


    Original     		K4S641632E 64Mbit 16Bit A10/AP PDF

    Contextual Info: K4S641632D CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Jun. 1999 K4S641632D CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM


    Original     		K4S641632D 64Mbit 16Bit A10/AP PDF

    K4S161622E-TC60

    Abstract: K4S161622E-TC80 K4S161622E K4S161622E-TC10 K4S161622E-TC70 samsung k4s161622e
    Contextual Info: K4S161622E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 0.0 March 2001 Samsung Electronics reserves the right to change products or specification without notice. Rev 0.0 Mar. '01 K4S161622E CMOS SDRAM 512K x 16Bit x 2 Banks Synchronous DRAM


    Original     		K4S161622E 16bit K4S161622E 50-TSOP2-400CF 20MAX 10MAX 075MAX K4S161622E-TC60 K4S161622E-TC80 K4S161622E-TC10 K4S161622E-TC70 samsung k4s161622e PDF

    Contextual Info: K4S161622E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 0.2 Oct 2002 Samsung Electronics reserves the right to change products or specification without notice. Rev 0.2 Oct. '02 K4S161622E CMOS SDRAM 512K x 16Bit x 2 Banks Synchronous DRAM


    Original     		K4S161622E 16bit 2K/32ms) 50-TSOP2-400CF 20MAX 10MAX 075MAX PDF

    K4S161622E-TC10

    Abstract: K4S161622E-TC60 K4S161622E K4S161622E-TC55 K4S161622E-TC70 K4S161622E-TC80
    Contextual Info: K4S161622E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.1 Jan 2003 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.1 Jan '03 K4S161622E CMOS SDRAM 512K x 16Bit x 2 Banks Synchronous DRAM


    Original     		K4S161622E 16bit K4S161622E 50-TSOP2-400CF 20MAX 10MAX 075MAX K4S161622E-TC10 K4S161622E-TC60 K4S161622E-TC55 K4S161622E-TC70 K4S161622E-TC80 PDF

    Contextual Info: Preliminary CMOS SDRAM KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM416S403OC is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG'S high performance CMOS


    OCR Scan     		KM416S4030C 16Bit KM416S403OC PDF

    Contextual Info: KM416S4030B CMOS SDRAM 1M x 16Bitx 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM416S4030B is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG’S high performance CMOS


    OCR Scan     		KM416S4030B 16Bitx KM416S4030B 10/AP PDF

    K4S641632C

    Abstract: 54TSOP2 54-TSOP2-400AF
    Contextual Info: K4S641632C CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The K4S641632C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS


    Original     		K4S641632C 16Bit K4S641632C 54-TSOP2-400AF 54TSOP2 54-TSOP2-400AF PDF

    km48s2020ct

    Abstract: KM48S2020CT-G
    Contextual Info: KM48S2020C CMOS SDRAM 1M x 8Bit x 2 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM48S2020C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNG'S high performance CMOS technol­


    OCR Scan     		KM48S2020C KM48S2020C 10/AP km48s2020ct KM48S2020CT-G PDF

    Contextual Info: Preliminary KM416S4031C CMOS SDRAM 1M x 16Bitx 4 Banks Synchronous DRAM with SSTL interface FEATURES GENERAL DESCRIPTION • • • • The KM416S4031C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG'S high performance CMOS


    OCR Scan     		KM416S4031C 16Bitx KM416S4031C 10/AP PDF

    KM416S4031BT-GS

    Abstract: KM416S4031 KM416S4031BT-G8
    Contextual Info: Preliminary KM416S4031B CMOS SDRAM 1M X 16Bit X 4 Banks Synchronous DRAM with SSTL interface FEATURES GENERAL DESCRIPTION • • • • The KM416S4031B is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG'S high performance CMOS


    OCR Scan     		KM416S4031B 16Bit KM416S4031B 10/AP KM416S4031BT-GS KM416S4031 KM416S4031BT-G8 PDF

    KM48S2120

    Abstract: K4S160822D
    Contextual Info: K4S160822D CMOS SDRAM 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL Revision 1.0 October 1999 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 Oct. 1999 K4S160822D CMOS SDRAM Revision History


    Original     		K4S160822D K4S160822D 50-TSOP2-400F KM48S2120 PDF

    Contextual Info: K4S161622H CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.1 December 2003 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.1 December '03 K4S161622H CMOS SDRAM Revision History


    Original     		K4S161622H 16bit 200MHz. PDF

    Contextual Info: K4S161622H CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.2 January 2004 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.2 January '04 K4S161622H CMOS SDRAM Revision History


    Original     		K4S161622H 16bit 200MHz. PDF

    Contextual Info: K4S161622H CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.0 November 2003 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.0 November '03 K4S161622H CMOS SDRAM Revision History


    Original     		K4S161622H 16bit 200MHz. 50-TSOP2-400CF 20MAX 10MAX PDF

    Contextual Info: K4S161622D CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.5 September 2000 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.5 Sep. '00 K4S161622D CMOS SDRAM Revision History


    Original     		K4S161622D 16bit K4S161622D-70. K4S161622D 50-TSOP2-400CF 20MAX PDF

    K4S641632F-TC75

    Abstract: K4S641632F
    Contextual Info: K4S641632F CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 1.1 May. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 May. 2003 K4S641632F CMOS SDRAM Revision History Revision 0.0 June, 2001


    Original     		K4S641632F 64Mbit 16Bit 100MHz A10/AP K4S641632F-TC75 K4S641632F PDF

    Contextual Info: K4S641632D CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 May. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 May. 2000 K4S641632D CMOS SDRAM Revision History Revision 0.1 May 2000


    Original     		K4S641632D 64Mbit 16Bit K4S280432C-TC75/TL75 A10/AP PDF

    K4S161622E-TI

    Contextual Info: K4S161622E-TI/E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Industrial/ExtendedTemperature Revision 0.0 June 2001 Samsung Electronics reserves the right to change products or specification without notice. Rev 0.0 Jun '01 K4S161622E-TI/E


    Original     		K4S161622E-TI/E 16bit K4S161622E 50-TSOP2-400CF 20MAX 10MAX 075MAX K4S161622E-TI PDF

    KM416S1020

    Abstract: 2 Banks x 512K x 16
    Contextual Info: KM416S1020C CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 0.6 September 1998 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 0.6 Sep. 1998 KM416S1020C CMOS SDRAM Revision History


    Original     		KM416S1020C 16bit KM416S1020C-H/L 100MHz KM416S1020C-8 KM416S1020C-7 115mA KM416S1020 2 Banks x 512K x 16 PDF

    K4S641632F-TC75

    Contextual Info: K4S641632F CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S641632F CMOS SDRAM Revision History Revision 0.0 June, 2001


    Original     		K4S641632F 64Mbit 16Bit 100MHz A10/AP K4S641632F-TC75 PDF