K4S64163 Search Results

K4S641633F

Contextual Info: K4S641633F-R B L/N/P CMOS SDRAM 4Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S641633F-R(B)L/N/P CMOS SDRAM 1M x 16Bit x 4 Banks SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply.

K4S64163LF

Contextual Info: K4S64163LF-R B G/S CMOS SDRAM 4Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S64163LF-R(B)G/S CMOS SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.

K4S641633H-R

Contextual Info: K4S641633H - R B E/N/G/C/L/F Mobile-SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,

BFR15

Contextual Info: K4S64163LF-R B F/R CMOS SDRAM 4Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S64163LF-R(B)F/R CMOS SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.

Contextual Info: CMOS SDRAM K4S64163LF-RG/S 4Mx16 Mobile SDRAM 54CSP VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 K4S64163LF-RG/S CMOS SDRAM Revision History Revision 0.0 (May. 2001, Target) • First generation of 64Mb Mobile SDRAM 54CSP having TSCR option (VDD 2.5V, VDDQ 1.8V).

64Mb samsung SDRAM

Contextual Info: Mobile SDRAM VDD 2.5V, V DDQ 1.8V & 2.5V K4S64163LF-RF(R) CMOS SDRAM 4Mx16 Mobile SDRAM (TCSR & PASR, -25°C ~ 70°C Operation) Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 Mobile SDRAM (VDD 2.5V, V DDQ 1.8V & 2.5V) K4S64163LF-RF(R) CMOS SDRAM Revision History

Contextual Info: K4S641632E-TI P CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 January 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Jan. 2001 K4S641632E-TI(P) CMOS SDRAM Revision History

RG290

Contextual Info: Mobile SDRAM VDD 2.5V, V DDQ 1.8V & 2.5V K4S64163LF-RG(S) CMOS SDRAM 4Mx16 Mobile SDRAM (TCSR & PASR, -25°C ~ 85°C Operation) Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 Mobile SDRAM (VDD 2.5V, V DDQ 1.8V & 2.5V) K4S64163LF-RG(S) CMOS SDRAM Revision 0.0 (May. 2001, Target)

Contextual Info: CMOS SDRAM K4S64163LF-GL/N/P 4Mx16 SDRAM 52CSP VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V Revision 1.1 April 2002 Rev. 1.1 April 2002 K4S64163LF-GL/N/P CMOS SDRAM Revision History Revision 0.0 (October 10. 2001, Preliminary) • First generation of 64Mb SDRAM 52CSP. (V DD 2.5V, VDDQ 1.8V & 2.5V).

K4S641632N

Abstract: k4s641632n-li K4S641632
Contextual Info: K4S641632N Industrial Synchronous DRAM 64Mb N-die SDRAM Specification 54 TSOP-II with Pb-Free and Halogen Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

k4s641632n

Abstract: K4S641632N-LC K4S640832N
Contextual Info: K4S640832N K4S641632N Synchronous DRAM 64Mb N-die SDRAM Specification 54 TSOP-II with Pb-Free and Halogen Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

k4s641632n

Abstract: k4s641632n-li tcl 14175
Contextual Info: K4S641632N Industrial Synchronous DRAM 64Mb N-die SDRAM Specification 54 TSOP-II with Lead-Free and Halogen-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

K4S641633D-GN

Contextual Info: K4S641633D-GN96 CMOS SDRAM 4Mx16 SDRAM D-die, 3.0V, CSP Rev. 0.1 October, 2000 Rev. 0.1 Oct. 2000 K4S641633D-GN96 CMOS SDRAM Revision History Revision 0.0 September, 2000 - First published. Revision 0.1 (October, 2000) - Changed AC/DC test output load condition from 50pF to 30pF

K4S641633D-G

Abstract: K4S641633D
Contextual Info: K4S641633D-G CMOS SDRAM 4Mx16 SDRAM D-die, 3.0V, CSP Revision 0.1 December 2000 Rev. 0.1 Dec. 2000 K4S641633D-G CMOS SDRAM Revision History Version 0.0 October. 2000. Preliminary First generation based on 64Mb D-die. Version 0.1(Dec. 29. 2000) • Final Specification of 64Mb D-die

K4S641632F-TC75

Abstract: K4S641632F
Contextual Info: K4S641632F CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 1.1 May. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 May. 2003 K4S641632F CMOS SDRAM Revision History Revision 0.0 June, 2001

K4S641633F

Contextual Info: K4S641633F-G A L/N/P CMOS SDRAM 4Mx16 Mobile SDRAM 52CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S641633F-G(A)L/N/P CMOS SDRAM 1M x 16Bit x 4 Banks SDRAM in 52CSP FEATURES GENERAL DESCRIPTION • 3.0V power supply.

K4S64163LH

Contextual Info: K4S64163LH - R B E/N/G/C/L/F Mobile-SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 2.5V power supply. The K4S64163LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,

K4S64163LF

Contextual Info: K4S64163LF-G A F/R CMOS SDRAM 4Mx16 Mobile SDRAM 52CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S64163LF-G(A)F/R CMOS SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 52CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.

K4S641632K

Abstract: K4S640832K K4S641632
Contextual Info: K4S640832K K4S641632K Synchronous DRAM 64Mb K-die SDRAM Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

tcl 14175

Abstract: K4S641632N
Contextual Info: K4S641632N Industrial Synchronous DRAM 64Mb N-die SDRAM Specification 54 TSOP-II with Lead-Free and Halogen-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Contextual Info: K4S641632D CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 May. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 May. 2000 K4S641632D CMOS SDRAM Revision History Revision 0.1 May 2000

Contextual Info: K4S641633H - R B E/N/G/C/L/F Mobile-SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,

Contextual Info: V DD 2.5V, V DDQ 1.8V & 2.5V K4S64163LF-GL N CMOS SDRAM 4Mx16 SDRAM 52CSP Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 V DD 2.5V, V DDQ 1.8V & 2.5V K4S64163LF-GL(N) CMOS SDRAM Revision History Revision 0.0 (October 10. 2001, Preliminary) • First generation of 64Mb SDRAM 52CSP. (V DD 2.5V, V DDQ 1.8V & 2.5V).

k4s641632n

Contextual Info: K4S640832N K4S641632N Synchronous DRAM 64Mb N-die SDRAM Specification 54 TSOP-II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE