K4S641632E-TC75 Search Results

K4S641632E-TC75 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TC75S59F		Toshiba Electronic Devices & Storage Corporation	Comparator, 1.8V to 7.0V, IDD=100μA, Open-drain output, SOT-25/SOT-353	Datasheet
TC75S102F		Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25	Datasheet
TC75S70L6X		Toshiba Electronic Devices & Storage Corporation	Comparator, 1.3V to 5.5V, IDD=18μA, MP6C(1.0x1.45mm)	Datasheet
TC75S67TU		Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 2.2V to 5.5V, Low Noise type:VNI=6nV/√Hz@1kHz, SOT-353F	Datasheet
TC75S51F		Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.5V to 7.0V, IDD=60μA, SOT-25/SOT-353	Datasheet

K4S641632E-TC75 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
K4S641632E-TC75		Samsung Electronics	1M x 16-Bit x 4 banks bynchronous DRAM LVTTL, 133MHz	Original	PDF	129.77KB	10

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Samsung Electro-Mechanics K4S641632E-TC75 SYNCHRONOUS DRAM, 4MX16, 5.4NS, CMOS, PDSO54
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	K4S641632E-TC75		4			1 $10.20 10 $10.20 100 $10.20 1000 $10.20 10000 $10.20	Buy Now
Samsung Electronics Co. Ltd K4S641632E-TC75 Our Stock
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Velocity Electronics	K4S641632E-TC75		1			1 - 10 - 100 - 1000 - 10000 -	Get Quote