1F TRANSISTOR Search Results

BA1F4M

Contextual Info: NEC DESCRIPTION NPN SILICON TRANSISTOR B A 1F 4M The BA1F4M is designed for use in medium speed switching PACKAGE DIMENSIONS circuit. FEATURE in millimeters inches 4.2 MAX. (0.165 MAX.) • Bias resistors built-in type NPN transistor equivalent circuit.

transistor marking 1f

Abstract: CMBT5550
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5550 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5550 = 1F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

smd transistor marking BL

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CSC2712Y=1E CSC2712GR G =1F

equivalent transistor smd 3 em 7

Abstract: CMBT5550 ts 4141 TRANSISTOR
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5550 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5550 = 1F Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

BC850 SOT23

Contextual Info: BC847 BC849 BC846 BC848 BC850 SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS ISSUE 6 - JANUARY 1997 PARTMARKING DETAILS COMPLEMENTARY TYPES BC846A-Z1A BC848B-1K BC846 BC856 BC846B-1B BC848C-Z1L BC847 BC857 BC847A-Z1E BC849B-2B BC848 BC858 BC847B-1F BC849C-2C

ts 4141 TRANSISTOR smd

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CSC2712 SOT-23 Formed SMD Package SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking CSC2712Y=1E CSC2712GR G =1F CSC2712BL(L)=1G Pin configuration 1 = BASE

Contextual Info: Æ T SGS-THOMSON D lsi S IIL[lCTIs! iD©S BC847 SMALL SIGNAL NPN TRANSISTORS Type M arking B C 847B 1F . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . LOW LEVEL GENERAL PURPOSE . PNP COMPLEMENT IS BC857

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5550 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transisto r Marking CMBT5550 = 1F Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

GES5819

Abstract: GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPSA55
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device bv ceo Type @ 10mA- V Min. VCE(sat) 1F E Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30

mpsa65

Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P AC KAG E VCE sat 1F E b v ceo Device Type @ 10mA-(V) Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30

smd transistor nm

Abstract: 6 pin TRANSISTOR SMD CODE p Transmissive Optical Sensor 3 pin nm smd transistor SMD Transistor 1f TRANSISTOR 610 smd Photo Modules NM smd transistor NM DUAL IR REFLECTIVE SENSOR telefunken LED
Contextual Info: VISHAY Vishay Telefunken Y Vishay Telefunken Type Designation Code Detectors U • T • • • 1 Vishay Telefunken T 1 f Series P = Plastic F = Plastic Filter S = Side View M = SMD Y = Fiber Optic Internal Classification Package Varieties 1f Detector 1r

2SC3087

Abstract: SC46 T0220AB
Contextual Info: I O rd e rin g n u m b e r: EN 1 O T 1F 2SC3087 No.lOllB NPN Triple Diffused Planar Silicon Transistor 500V/5A Switching Regulator Applications Features • High breakdown voltage V cB O = 800V • High switching speed • Wide ASO Absolute Maximum Ratings/Ta = 25°C

amplifier siemens sot-363

Abstract: BFS480 HF-transistoren SOT-363 fg 420 sot-363 SOT343
Contextual Info: Transistoren Transistors SIEGET -HF-BIPOLAR-Transistoren SIEGET^-RF-BIPOLAR-Transistors Type N = NPN P = PNP Maximum Ratings Characteristics r A = 25 °C Package G Fcèo V 1F min k mA -f*tot h mW GHz dB k mA Vce f V MHz dB G ms k mA Vce / V MHz Lead Code

003A

Abstract: 2Sd2047 2SD2047R
Contextual Info: «L SPEC 1F 1CATI ON DEVICE NAME : TYPE NAME : SPEC. No. : DATE : BIPOLAR TRANSISTOR 2 S D 2 0 4 7 R F u j i E l e c t r i c Co. Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric CaJLid CHECKED DWG.NO. DRAWN 1/8

transistor k 2541

Abstract: 9556 transistor ha2254 transistor ha1 HA-2541
Contextual Info: HARRIS S E M I C O N D U C T O R H M MA « • ■ 1f 40MHz, Fast Settling, Unity Gain Stable, Operational Amplifier N o vem b er 1996 Features Description • Unity Gain Bandwidth. 40MHz • High Slew Rate. 250V/ns

2SD646

Abstract: toshiba 2SD646 U315 AC63
Contextual Info: 5/ ' J 3 > N P N = * f f i « * 1f l B h 5 > 5> ; ^ G - T R SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR(G-TR m it n mm TENTATIVE INDUSTRIAL APPLICATIONS Unit in mm O 9 f S fffì (52 # * m * * (w ñ m m High Power Switching Applications 6&s±ai w b b d

HFA45HI60C

Abstract: hexfred transistor k31 ANSI 45 rectifier
Contextual Info: PD-2.380 International ÜH Rectifier HEXFRED Provisional Data Sheet HFA45HI60C u l t r a f a s t , s o f t RECOVERY DIODE Units Characteristics Vbr per leg 600 600V, 45A Features: Major Ratings and Characteristics V 1F(AV) 45' A t rr (per leg) 75 ns Q rr (per leg)

bf311

Abstract: BF494 BF253 BF595 BF200 transistor BF271 BF115 BF153 BF158 BF184
Contextual Info: TYPE NO. P O L A R IT Y RF-1F High Frequency Transistors M A X IM U M R A T IN G S Pd ImWI 'c Im A V C EO V ) fT min Cob Cre« max max (MHz) (pF) (dB) 230+ 600 300 400 700+ 0.8 • 1.2 1.2 0.4+ • 1.2 • 3.5+ — — 9 3.5 700+ 400 300+ 350 675+ 1.2 •

transistor 2N3563

Abstract: 2n2365 2N3563 2N2616 2n3600 2N3826 2N3933 2N915 TO-92c to72j
Contextual Info: TYPE NO . P O L A R IT Y RF-1F High Frequency Transistors CASE M A X I M U M R A T IN G S V C E S A T h fe Pd (mW) 'c (m A) V CEO (V ) min 20 20 40 100 40 max 'c (m A) V CE (V ) 200 160 400 160 3 8 10 10 10 1 10 10 10 10 0.4 — — max - (V ) M PS918 M PS3563

Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S1F11 Microcontroller D ATA SHE E T D S -LM3S 1F 11 - 1 3 4 4 0 . 2 5 4 9 S P M S 234B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated

876A

Abstract: IR TRANSISTOR
Contextual Info: Optolink Ltd Optical Switches ChanetorM te ic o n Tm I 1f CondWont V cm As ) Shown R L -0 mA Unft Ic O F F IO N | 1OFF V C * K i) V I (tod) V c* A t Shown H -0 H i 20mA S 1- lit Ic As Shown II As Shown nA V V V MS mA V <•*> bV tv coo •CO Ic GAP Output

Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S1F16 Microcontroller D ATA SHE E T D S -LM3S 1F 16 - 1 3 4 4 0 . 2 5 4 9 S P M S 232B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated

Contextual Info: T E X A S I N S T R U M E N T S - P R O D U C T I ON D ATA Stellaris LM3S1F16 Microcontroller DATA SH E E T DS - LM 3S 1F 16 -11 4 2 5 C opyri ght 2007- 2012 Texas Instruments Incorpor at ed Copyright Copyright © 2007-2012 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments

Contextual Info: T E X A S I N S T R U M E N T S - P R O D U C T I ON D ATA Stellaris LM3S1F11 Microcontroller DATA SH E E T DS - LM 3S 1F 11 -11 4 2 5 C opyri ght 2007- 2012 Texas Instruments Incorpor at ed Copyright Copyright © 2007-2012 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments