1E5 TRANSISTOR Search Results

RFP70N06

Abstract: TA49007 RFG70N06 fp70n06 70n06 4772 DIODE TC1501
Contextual Info: ill H R F G 70N 06 F P 7 0 N O fi a r r is S E M I C O N D U C T O R ^ N-Channel Enhancement-Mode Power Field-Effect Transistors August 1992 Features • Packages TO-22QAB TOP VIEW 70A,60V • r DS on = 0.014£2 • UIS Rating Curve (Single Pulse) DRAIN (FLANGE)

AN7254

Abstract: RF650N06 RFP50N05 RFP50N06 AN-7254 RFG50N05 mosfat 24v mosfat RFP70N06 34069
Contextual Info: 3 } H a r r is May 1992 R FP 50N 05 R FG 50N 05 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Package TO-220AB TOP VIEW • 50 A , 5 0 V • rDS(on) = 0 .0 2 2 0 DRAIN (FLANGE) • UIS SO A Rating Curve (Single Pulse) u • SO A is P ow er-D issipation Lim ited

RFA100N05E

Abstract: GC200 100N05E ff048
Contextual Info: ffl h a r r is J a n u a ry 1 9 9 3 RFA 100N05E N-Channel Enhancem ent-M ode Power Field-Effect Transistor MegaFET Package Features • 100A, 50V • rDS(on) = 0 -0 0 8 fi D R A IN • Electrostatic Discharge Rated • UIS SOA Rating Curve (Single Pulse)

Contextual Info: Hormis S RFD3N08L, RFD3N08LSM Semiconductor y 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs juiy 1998 Features Description • 3A, 80V • UIS Rating Curve The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power field effect transistors

Contextual Info: HRF3205, HRF3205S Semiconductor June 1999 Data Sheet 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

T0202

Abstract: 160 e7 D41E1 D41E7
Contextual Info: 1989963 CENTRAL SEMICONDUCTOR c entral 9 2D 00380 D ~T'3 3~ DE j n f m b g semiconductor — i~7 □ □ □ □ BflO 3 D'Il El DA1E5 D^I E7 H PNP SILICON POWER TRANS I STOR • JEDEC T0-202 CASE (EBC DESCRIPTION The CENTRAL SEMICONDUCTOR D*»1E series types are silicon PNP transistors manufactured

RFG75N05E

Contextual Info: RFG75N05E Semiconductor April 1999 Data Sheet 75A, 50 V, 0.008 Ohm, N-Channel Power MOSFET File Number 2275.4 Features • 75A, 50V These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

160 e7

Abstract: D41E1 D41E7
Contextual Info: 1989963 CENTRAL SEMICONDUCTOR c entral 9 2D 00380 D ~T'3 3~ DE j n f m b g semiconductor — i~7 □ □ □ □ BflO 3 D'Il El DA1E5 D^I E7 H PNP SILICON POWER TRANS I STOR • JEDEC T0-202 CASE (EBC DESCRIPTION The CENTRAL SEMICONDUCTOR D*»1E series types are silicon PNP transistors manufactured

if9220

Abstract: TC227 irfu9220 IRFR9220 TB334
Contextual Info: IRFR9220, IRFU9220 Data Sheet 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement-mode silicon gate power fieldeffect transistors designed for applications such as switching

16N05L

Abstract: RFD16N05L 16N05
Contextual Info: m H a rris uj s e m ic o n d u c to r June 19 9 2 R F D 16N 05 L R F D 16 N 0 5 L S M N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Package TO-251 AA TOP VIEW • 1 6 A .5 0 V • r DS(ON) = 0.047Q • UIS SOA Rating Curves (Single Pulse)

HRF3205 equivalent

Abstract: HRF3205 equivalent mosfet number hrf3205 data sheet mosfet HRF3205 hrf3205 data hrf3205 datasheet HRF3205S HRF3205ST TB334 mosfet HRF3205
Contextual Info: HRF3205, HRF3205S Data Sheet 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

tt 4458

Abstract: mosfet 4456 TB334 AN9321 AN9322 RF1S45N06SM RF1S45N06SM9A RFG45N06 RFP45N06 N-CHANNEL 45A TO-247 POWER MOSFET
Contextual Info: RFG45N06, RFP45N06, RF1S45N06SM Data Sheet July 1999 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs 3574.4 Features • 45A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

tt 4458

Abstract: AN9321 AN9322 RF1S45N06SM RF1S45N06SM9A RFG45N06 RFP45N06 TB334 mosfet 4456
Contextual Info: RFG45N06, RFP45N06, RF1S45N06SM Data Sheet July 1999 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs 3574.4 Features • 45A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

fd3055

Contextual Info: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

HRF3205 equivalent

Abstract: data sheet mosfet HRF3205 HRF3205 equivalent mosfet number HRF3205 HRF3205S HRF3205ST TB334 mosfet HRF3205
Contextual Info: HRF3205, HRF3205S Data Sheet 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

AN9321

Abstract: AN9322 RF1S45N06SM RF1S45N06SM9A RFG45N06 RFP45N06 TB334 F1S45N06
Contextual Info: RFG45N06, RFP45N06, RF1S45N06SM Data Sheet January 2002 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs Features • 45A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

Contextual Info: KSC5502D / KSC5502DT NPN Triple Diffused Planar Silicon Transistor • • • • • • 4 D-PAK Features Equivalent Circuit High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application

FD3055

Abstract: IS433 Fp3055 RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A
Contextual Info: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

Contextual Info: RFG45N06, RFP45N06, RF1S45N06SM Data Sheet Title FG4 06, P45 6, 1S4 06S bt A, V, 28 m, anwer OSTs utho July 1999 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

TC227

Contextual Info: IRFR9220, IRFU9220 Data Sheet 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement-mode silicon gate power fieldeffect transistors designed for applications such as switching

FD3055

Abstract: Fp3055
Contextual Info: RFD3055, RFD3055SM, RFP3055 Data Sheet Title FD3 5, D30 SM, P30 bt A, V, 50 m, anwer OSTs utho eyrds terrpoon, July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

AN9321

Abstract: AN9322 RFD3N08L RFD3N08LSM RFD3N08LSM9A TB334
Contextual Info: RFD3N08L, RFD3N08LSM Data Sheet 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs Features • 3A, 80V The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving

HRF3205 equivalent

Abstract: HRF3205 equivalent mosfet number DATASHEET hrf3205 HRF3205 data sheet mosfet HRF3205 HRF3205S HRF3205ST TB334
Contextual Info: HRF3205, HRF3205S Data Sheet 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

AN9322

Abstract: AN9321 RFD3N08L RFD3N08LSM RFD3N08LSM9A TB334
Contextual Info: RFD3N08L, RFD3N08LSM Data Sheet Title FD3 8L, D3 8LS bt A, V, 00 m, gic vel, Cha el wer OSTs utho July 1999 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs Features The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power field effect transistors