1E01 Search Results

Contextual Info: MBR0540T1G, NRVB0540T1G, MBR0540T3G, NRVB0540T3G Surface Mount Schottky Power Rectifier SOD−123 Power Surface Mount Package The Schottky Power Rectifier employs the Schottky Barrier principle with a barrier metal that produces optimal forward voltage drop−reverse current tradeoff. Ideally suited for low voltage, high

Contextual Info: Doc No. TT4-EA-14292 Revision. 6 Product Standards MOS FET FJ3P02100L FJ3P02100L Unit: mm • Package dimension Silicon P-channel MOSFET 2.0 For Load-switching 0.2 3 2.0 0.25  Features 1  Low drain-source ON resistance:RDS(on)typ. = 12.0m （VGS = -2.5 V)

Contextual Info: VSKDS400/045 www.vishay.com Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A FEATURES • 150 °C TJ operation • Low forward voltage drop • High frequency operation • Low thermal resistance • UL approved file E78996

JEDEC-JESD47

Abstract: vs-30pt100
Contextual Info: VS-30PT100 www.vishay.com Vishay Semiconductors High Performance Generation 5.0 Schottky Rectifier, 30 A FEATURES Base cathode • 175 °C high performance Schottky diode • Very low forward voltage drop 2 • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency

Contextual Info: Doc No. TT4-EA-14765 Revision. 1 Product Standards MOS FET FJ3P01130L FJ3P01130L Unit: mm • Package dimension Silicon P-channel MOSFET 2.0  Application 0.2 3  Battery FET  Load switch 2.0 0.25  Features Low drain-source ON resistance:RDS(on)max. = 10.0mΩ （VGS = -3.5 V)

transil diode

Contextual Info: ITA6V1U1 Application Specific Discretes A.S.D.TM TRANSILTM ARRAY FOR DATALINE PROTECTION APPLICATIONS Data transmission lines protection : - Unipolar signal up to 5.5V - Bipolar signal in the +/- 2.5V range FEATURES HIGH SURGE CAPABILITY TRANSIL ARRAY IPP = 40 A 8/20µs

EM78458

Abstract: EM78459 78459
Contextual Info: EM78458/459 8-Bit Microcontroller with MASK ROM Product Specification DOC. VERSION 1.4 ELAN MICROELECTRONICS CORP. May 2005 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation.

in4577

Abstract: CLM2950 CLM2950ACN-X CLM2950CN-X CLM2951 CLM2951ACP-X CLM2951ACS-X CLM2951CP-X CLM2951CS-X
Contextual Info: 150mA Low Dropout Voltage Regulators CORPORATION CLM2950 / CLM2951 FEATURES • 5V, 3.3V, and 3.0V Versions at 150mA Output • Very Low Quiescent Current Dropout Voltage • Low • Extremely Tight Load and Line Regulation • Very Low Temperature Coefficient

BUK542

Abstract: BUK542-100A BUK542-100B
Contextual Info: PHILIPS INTERNATIONAL bSE ]> • 711QSSb ODbmfll Tbfl ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level GENERAL DESCRIPTION PINNING -SO T186 PIN SYMBOL

8uk453

Abstract: BUK453-60A BUK453-60B T0220AB
Contextual Info: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUK426-100B

Abstract: transistor BU 110 BUK426-100A
Contextual Info: Philips Components Data sheet status Product specification date of issue March 1991 PHILIPS 7 - 3 ^ -/ / B U K 4 2 6 - 1OOA/B PowerMOS transistor 5bE T> INTERNATIONAL 7110fl2t 0044120 flSD I_ I GENERAL DESCRIPTION N-channel enhancement mode

BUK543

Abstract: BUK543-60A BUK543-60B TTA10
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711DflSb ODbMlflb 54T ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic Kill-pack

BUK452-100B

Abstract: BUK452-100A T0220AB
Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110fl2b DDbHOBl SSI « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUK443

Abstract: BUK443-60A BUK443-60B TRANSISTOR C 557 B
Contextual Info: PHILIPS INTERNATIONAL bSE ]> 711002b OObB^l Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

k 246 transistor fet

Abstract: 100-P BUK571 BUK571-60A BUK571-60B K571 1e43
Contextual Info: PHILIPS INTERNATIONAL 5fc,E D Philips Components • 711Dfi2b 324 ■ PHIN Data sheet B status Preliminary specification date of issue March 1991 Replaces BUK541-60A/B GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

SE 7889

Abstract: st 9514 C360N AN3636 e500 Core Family Reference Manual an363 MPC8560 73cd6 MPC8560ADS 0x007B0000
Contextual Info: Freescale Semiconductor Application Note Document Number: AN3636 Rev. 1, 08/2008 PowerQUICC III Performance Monitors Using the Core and System Performance Monitors This application note describes aspects of utilizing the core and device-level performance monitors on

EM78156EAS

Abstract: EM78156EP EM78P156E EM78156E EM78156EKM EM78156EM
Contextual Info: EM78156E 8-Bit Microcontroller with MASK ROM Product Specification DOC. VERSION 1.3 ELAN MICROELECTRONICS CORP. July 2004 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation.

Oscilloquartz

Abstract: OCXO8673 Crystal 8.672 OSCILLOQUARTZ S.A OCXO 406 oscilloquartz 4.096
Contextual Info: SC-cut Product Description The modular design offers the flexibility to accomodate 3rd overtone crystal resonator to enhance long term stability few parts in 10-10 per day and features a sine or TTL-compatible output. Furthermore, industry standard footprint

diode b1c SMD

Abstract: EM78P159NAS R3F SMD EM78P159N XTAL 8MHZ SMD EM78P157N EM78P159NM EM78P159NP DIODE C63
Contextual Info: EM78P159N 8-Bit Microcontroller with OTP ROM Product Specification DOC. VERSION 1.0 ELAN MICROELECTRONICS CORP. March 2006 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation.

crystal oscillator clock 3.579MHZ

Abstract: EM785830AA EM785830AAM EM78P5830AA EM78P5830AAM EM78P5830AM EM78P5830AP ICE5830 SPIB6 ph76
Contextual Info: EM785830AA 8-BIT MICRO-CONTROLLER Version 1.6 ELAN MICROELECTRONICS CORP. No. 12, Innovation 1st RD., Science-Based Industrial Park Hsin Chu City, Taiwan TEL: 03 5639977 FAX: (03)5630118 Version History Specification Revision History Version EM785830AA 1.0

PD2111

Abstract: 403CNQ100PBF 403CNQ 40HF P460
Contextual Info: Bulletin PD-21111 12/05 403CNQ100PbF SCHOTTKY RECTIFIER 400 Amp LUG TERMINAL ANODE 1 LUG TERMINAL ANODE 2 BASE COMMON CATHODE Major Ratings and Characteristics Characteristics Description/ Features Values Units IF AV Rectangular 400 A VRRM 100 V 25,500 A

EM78P153SN

Abstract: EM78P153SP EM78P153S EM78P153S* writer
Contextual Info: EM78P153S OTP ROM 1. GENERAL DESCRIPTION EM78P153S is an 8-bit microprocessor with low-power and high-speed CMOS technology. It is equipped with a 1024*13-bits Electrical One Time Programmable Read Only Memory OTP-ROM within it. It provides a PROTECTION bit to prevent intrusion of user’s code in the OTP memory as well as 15

MIC5232

Abstract: MIC5232-3.3YD5
Contextual Info: MIC5232 10mA Ultra-Low Quiescent Current µCap LDO General Description Features • • • • • • The MIC5232 is an ultra-low quiescent current, lowdropout linear regulator that is capable of operating from a single-cell lithium ion battery. Consuming only

BUK456-100A

Abstract: BUK456 BUK456-100 BUK456-100B
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,