1BIT CMOS STATIC RAM Search Results

a6dc

Contextual Info: KM41C16002A CMOS DRAM 16M x 1Bit CMOS Dynamic RAM with Static Column Mode DESCRIPTION This is a fam ily of 16,777,216 x 1 bit Static Column Mode CMOS DRAMs. Static Column Mode offers high speed random access of memory cells within the same row. Access time -5, -6, -7 or -8 and package

HM621100AP-35

Abstract: HM621100A HM621100AJP-20 HM621100AJP-25 HM621100AJP-35 HM621100ALP-20 HM621100ALP-25 HM621100ALP-35 HM621100AP-20 HM621100AP-25
Contextual Info: HM621100A Series 1048576-word x 1-bit High Speed CMOS Static RAM Rev. 0.0 Dec. 1, 1995 Description The Hitachi HM621100A is a high speed 1M Static RAM organized as 1048576-word × 1bit. It realizes high speed access time 20/25/35 ns and low power consumption, employing

Contextual Info: SAMSUNG ELECTRONICS INC L7E D • 7 ^ 4 1 4 2 DDlSb30 77D ■ SM6K KM41C4002B CMOS DRAM 4M x 1Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM 41C4002B is a C M O S high speed 4,194,304 x 1 Dynamic Random A cce ss Memory. Its de­

61256

Abstract: M6125
Contextual Info: AT&T Data Sheet M 61256 Radiation-Hard 256K x 1-Bit S tatic RAM Features • Radiation-hard, 1.25 /im bulk-CMOS technology ■ Fast address access time: <50 ns at 80 °C, 4.5 V post-Rad ■ TTL and CMOS compatible inputs and outputs ■ 3-state output ■ Low operating power: <25 mW/MHz

Contextual Info: CMOS STATIC RAM 256K 256K x 1-BIT PRELIMINARY IS !” FEATURES: DESCRIPTION: • The ID T71257 Is a 2 6 2 ,144-bit high-speed static RAM organized as 256K x 1. It is fabricated using ID T’s high-performance, high-rellability C E M O S technology. This state-of-the-art technology,

pd 3174

Abstract: ACS35
Contextual Info: 256K 256K x 1-BIT CMOS STATIC RAM PLASTIC SIP MODULE ID T 7 M P 1 5 6 FEATURES: DESCRIPTION • High-density 256K (256K x 1) CMOS static RAM module The IDT7MP156 is a 256K (256K x 1-bit) high-speed static RAM module constructed on an epoxy laminate surface using four

Contextual Info: M 61064 Radiation-Hard 64K x 1-Bit S tatic RAM Features • Radiation-hard, 1.25 /¿m bulk-CMOS technology ■ Fast address access time: < 50 ns at 80 °C, 4.5 V post-Rad ■ TTL and CMOS compatible inputs and outputs ■ 3-state output ■ Low operating power: <20 mW/MHz

Contextual Info: MITSUBISHI LSIs MITSUBISHI LSIs M5M5257EJ-10,-12 M5M5257EJ-10,-12 262144-BIT 262144-WORD BYBY 1-BIT CMOS STATIC RAM 262144-BIT (262144-WORD 1-BIT) CMOS STATIC RAM DESCRIPTION The M5M5257E is a family of 262144-word by 1-bit static RAMs, fabricated with the high-performance CMOS silicon-gate MOS

2981 24 pin

Abstract: ldt6167
Contextual Info: IDT6167SA IDT6167LA CMOS Static RAM 16K 16K x 1-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ high reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit

8A109

Abstract: A1823 1048576-WORD 1,048,576 16 bit
Contextual Info: MITSUBISHI LSIs MITSUBISHI LSIs M5M51001CJ-12,-15,-20 M5M51001CJ-12,-15,-20 1048576-BIT 1048576-WORD BYBY 1-BIT CMOS STATIC RAM 1048576-BIT (1048576-WORD 1-BIT) CMOS STATIC RAM DESCRIPTION The M5M51001CJ are a family of 1048576-word by 1-bit static RAMs, fabricated with the high performance CMOS silicon gate

32P0K

Abstract: M5M54R01AJ-12 M5M54R01AJ-15
Contextual Info: MITSUBISHI LSIs 1998.11.30 Ver.B M5M54R01AJ-12,-15 PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change 4194304-BIT 4194304-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION The M5M54R01AJ is a family of 4194304-word by 1-bit

125OC

Abstract: IDT6167 IDT6167LA IDT6167SA
Contextual Info: IDT6167SA IDT6167LA CMOS Static RAM 16K 16K x 1-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ high reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to, and remain in, a standby mode as long as CS

Contextual Info: IDT 7MC156 256K 256K x 1-BIT CMOS STATIC RAM SIP MODULE FEATURES: DESCRIPTION: • H igh-dansity 256K (256K x 1) CMOS static RAM m odule • Inputs and outputs d ire ctly TTL-com patible The IDT7MC156 is a 256K (256K x 1-bit) high-speed static RAM m odule constructed on a co-fired ceram ic substrate using four

7187L55

Abstract: 7187L45
Contextual Info: IDT7187S IDT7187L CMOS Static RAM 64K 64K x 1-Bit Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ The IDT7187 is a 65,536-bit high-speed static RAM organized as 64K x 1. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. Access times as fast as 25ns are available.

sc1007

Abstract: dt6167
Contextual Info: INTEGRATED DEVICE 14E D • 4Ö25771 00035tb 4 ■ IDT 6167SA IDT 6167LA CMOS STATIC RAM 16K 16K x 1-BIT TW6-23-05 FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) The IDT6167 Is a 16,384-blt high-speed static RAM organized as 16K x 1. The part Is fabricated using IDT's high-performance, hlghreiiabllity tech nolog y-C E M O S . This state-of-the-art technology,

bbu07

Contextual Info: IDT6167SA IDT6167LA CMOS STATIC RAM 16K 16K x 1-BIT Integrated Device Technology, Inc. FEATURES: Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CSgoes HIGH, the circuit will automatically go to, and remain in, a standby

Contextual Info: CMOS STATIC RAMS 16K 16K X 1-BIT IDT6167SA IDT6167LA FEATURES: DESCRIPTION: • The ID T6167 is a 16,384-bit h ig h -s p e e d static RAM organized as 16K x 1. The part is fa b ric a te d u sin g ID T's hig h -p erform a n ce, highre iia b llity te c h n o lo g y -C E M O S . T h is state-of-the-art technology,

m5m5257dp

Abstract: M5M5257D J-12 76A9 100 20L A2
Contextual Info: MITSUBISHI LSIs MITSUBISHI LSIs M5M5257DP,J-12,-15,-20,-15L,-20L M5M5257DP,J-12,-15,-20,-15L,-20L 262144-BIT 262144-WORD BY 1-BIT CMOS STATIC RAM 262144-BIT (262144-WORD BY 1-BIT) CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M5M5257D is a family of 262144-word by 1-bit static RAMs,

Contextual Info: v r r s u g ' S H i '. s - s M5M51001P,J-25,-35,-45,-25L,-35L,-45L 1048576-BIT 1048576-WQRD BY 1-BIT CMOS STATIC HAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M5M51001 is a family of 1048576-word by 1 bit static RAM;, fabricated with the high-performance CMOS silicongate process and designed for high-speed application. These

32P0K

Abstract: M5M5V4R01J-12 M5M5V4R01J-15
Contextual Info: MITSUBISHI LSIs M5M5V4R01J-12,-15,-20 PRELIMINARY 1997.02.06 Rev.D Notice: This is not a final specification. Some parametric limits are subject to change 4194304-BIT 4194304-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) A0 A1 A2

32P0K

Abstract: M5M54R01J-12 M5M54R01J-15
Contextual Info: MITSUBISHI LSIs M5M54R01J-12,-15,-20 PRELIMINARY 1997.02.06 Rev.D Notice: This is not a final specification. Some parametric limits are subject to change 4194304-BIT 4194304-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) A0 A1 A2

262144-word

Abstract: 1BIT CMOS STATIC RAM
Contextual Info: MITSUBISHI LS Is M5M5257BP, J-15,-20,-25 262144-BIT 262144-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION The M5M5257B is a family of 262144-word by 1-bit static RAMs, fabricated with the high-performance CMOS silicongate MOS process and designed for high-speed application. These

Contextual Info: MITSUBISHI LS Is M 5 M 5 2 5 7 B P , J - 1 5 , - 2 , - 2 5 262144-BIT 262144-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M5M5257B is a family of 262144-word by 1-bit static RAMs, fabricated with the high-performance CMOS silicongate

32P0K

Abstract: M5M5V4R01J-12 M5M5V4R01J-15
Contextual Info: MITSUBISHI LSIs M5M5V4R01J-12,-15 1997.11.20 Rev.F 4194304-BIT 4194304-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION The M5M5V4R01J is a family of 4194304-word by 1-bit static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated with the high performance CMOS silicon gate