1A DIODE 1N Search Results

1N5819

Abstract: 1N5817 1N5817 SJ diode 5819 5819 DIODE 1N5817 schottky diode symbol marking SJ 1N5819 sot-23 1N5817 diode sot-23 Marking sj
Contextual Info: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO.,LTD SOT-23-3L Plastic-Encapsulate Diode www.haorm.cn 1N5817, 1N5819 tel:86-769-87058050 SOT-23-3L SCHOTTKY DIODE FEATURES + 1. ANODE Power dissipation PD : 300 mW Ta=25℃ Collector current 1A IO : Collector-base voltage

sot-23 Marking sj

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate Diode 1N5817, 1N5819 SOT-23-3L SCHOTTKY DIODE FEATURES + 1. ANODE Power dissipation PD : 300 mW Ta=25℃ Collector current IO : 1A Collector-base voltage VR : 1N5817: 20 V 1N5819: 40

2510W

Abstract: RS1M diode
Contextual Info: Email: info@kingtronics.com Web: www.kingtronics.com Tel: +86 769 81188110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Bridge Rectifier List UL ISO Manufacturer since 1990 Diode Recitifer M7 DO-214AC (1A 1000V)SMA Bridge Rectifier ABS2-ABS6; ABS8; ABS10

Diode 1N4946

Abstract: 1N4946
Contextual Info: 1N4942,1N4944,1N4946 thru 1N4948 Standard 1A F AST RECOVERY DIODE SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5109, REV. A AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV

4942

Abstract: 1N4942
Contextual Info: 1N4942,1N4944,1N4946 thru 1N4948 Standard 1A F AST RECOVERY DIODE SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5109, REV. A AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV

Contextual Info: SENSITRON SEMICONDUCTOR 1N6824-1 1N6824UR-1 TECHNICAL DATA DATASHEET: 320, REV. D ULTRA LOW REVERSE LEAKAGE SCHOTTKY RECTIFIER Very Low Forward Voltage Drop 1A, 100 V Schottky Applications: œ Switching Power Supply œ Converters œ Free-Wheeling Diodes œ Polarity Protection Diode

ultra low forward voltage schottky diode

Abstract: ultra low forward drop schottky ultra low reverse current schottky ultra low drop forward voltage diode axial schottky diode 100V 1A
Contextual Info: SENSITRON SEMICONDUCTOR 1N6824-1 1N6824UR-1 TECHNICAL DATA DATASHEET: 320, REV. D ULTRA LOW REVERSE LEAKAGE SCHOTTKY RECTIFIER Very Low Forward Voltage Drop 1A, 100 V Schottky Applications: œ Switching Power Supply œ Converters œ Free-Wheeling Diodes œ Polarity Protection Diode

in5408 diode

Abstract: IN5408 diode IN5408 diode 1N5408 specifications diode IN 5402 3A IN5408 diode data sheet Diode IN 5404 DIODE 1N5402 3a Power diode SPECIFICATIONs DIODE 1N5400
Contextual Info: 1N5400 - IN5408 Power Diode 1A to 3A, Standard Axial Rectifiers Features: • 3.0 ampere operation at TA = 75°C with no thermal runaway. • High current capability. • Low leakage. Ampere General Purpose Rectifiers Absolute Maximum Ratings* Symbol IO TA = 25°C unless otherwise noted

CMZ5945B

Contextual Info: DEMO MANUAL DC2027A LTC4364HDE-1, 2 12V Surge Stopper with Ideal Diode Description Demonstration circuit 2027A showcases the LTC 4364 surge stopper with ideal diode in a 12V, 1A application. DC inputs of up to 80V and transients to 250V are limited to just 28.7V at the output. Sagging and reverse-polarity

code d03 diode

Abstract: D0802 RB161L-40
Contextual Info: RB161L-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE FOR HIGH FREQUENCY RECTIFICATION AND SWITCHING POWER SUPPLY Features * Compact power mold type * Ultra low VF VF = 0.35V typ. at 1A * VRM = 40V guaranteed Maximum Ratings and Electrical Characteristics

D0802

Abstract: RB161L-40
Contextual Info: RB161L-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE FOR HIGH FREQUENCY RECTIFICATION AND SWITCHING POWER SUPPLY Features * Compact power mold type * Ultra low VF VF = 0.35V typ. at 1A * VRM = 40V guaranteed Maximum Ratings and Electrical Characteristics

RB160L

Abstract: RB160L-60
Contextual Info: RB160L-60 Diodes Schottky barrier diode RB160L–60 !External dimensions Units : mm !Applications High frequency rectification For switching power supply. 4.5±0.2 !Features 1) Compact power mold (PMDS) 2) Low VF. (VF=0.55V Typ. at 1A) 3) High reliability

marking 2U diode

Abstract: D1NL20U 1NL20U DIODE MARKING 2U L20U
Contextual Info: n - n x ^ -c r— K Super Fast Recovery Diode Axial Diode O U TLIN E D IM E N SIO N S D1NL20U Unit • mm Package I AX057 o 200V 1A hLO rn ±0.1 2 0 MIN •trr3 5 n s -2 0 m in -M - • 5 m m \d " j m «EPM f Marking

RB160L-60

Abstract: RB160L ROHM DIODE WITH SOD CASE
Contextual Info: RB160L-60 Diodes Schottky barrier diode RB160L–60 !External dimensions Units : mm !Applications High frequency rectification For switching power supply. 4.5±0.2 !Features 1) Compact power mold (PMDS) 2) Low VF. (VF=0.55V Typ. at 1A) 3) High reliability

smd kir

Abstract: DIODE MARKING 9Y smd code marking book DIODE SMD CODE MARKING LG smd diode code 1_b DG1J10A J532 smd diode schottky code marking 1A smd code marking vk YJ-7
Contextual Info: Schottky Barrier Diode Single Diode m tm DG1J10A 100V n • iiS'JviySMD Weight 0.011 g Typ 1A 3.5 1 U ltra -sm all S M D • fílR = 1 L o w Ir =100|j A m 100/l/A (?) CD r • i2j®sy=0.8mm • U nit-m m Package : G 1F Feature a OUTLINE 1 1J71 1 QD°

marking 2U diode

Abstract: marking 2U 20 diode diode marking code 2U diode marking 2U marking code DIODE 2U diode 2u marking code marking 2U 40 diode 2U marking code diode
Contextual Info: Super Fast Recovery Diode Axial Diode W tm D1NL20U OUTLINE Package : AX057 U nit-m m W eight 0.19g Typ 200V 1A Feature UJ 02.6 • Low Noise • m s 'ix • trr= 3 5 n s • trr=35ns 0> -M - Main Use • Fly Wheel • ÍM .0 A J M 3 • Home A ppliance, Office Autom ation, Lighting

AND8032

Abstract: MTP6N60M Christophe Basso Simulation of 3 phase common mode choke esh3 ESPC AND8032 PCB TL431 model SPICE lisn H.V capacitor 2100 vac
Contextual Info: AND8032/D Conducted EMI Filter Design for the NCP1200 Prepared by: Christophe Basso ON Semiconductor http://onsemi.com APPLICATION NOTE The Bulk Capacitor is a Natural Shield INTRODUCTION As Figure 1a depicts, an SMPS is supplied by a network made of a diode bridge rectifier and a bulk capacitor. Every

s1nb

Contextual Info: Bridge Diode Dual In-Line Package OUTLINE S1NB 6.8 800V 1A ④ 品名略号 Type No. • Unit : mm Weight : 0.29g typ. Package 1N SMD DIP 級表示（例） Class Feature ① S1NB 6094 ①＋ ③~ ②∼ 10 ② ロット記号（例） ③ Date code • Small-DIP

s1nb

Abstract: S1NB60 45 S1NB60 029g S1NB60 15 S1NB80 diode smd marking BUF marking code 68 800V1A diode code 6_8
Contextual Info: デュアルインライン型 Bridge Diode Dual In-Line Package •外観図 OUTLINE S1NB□ Unit : mm Weight : 0.29g （typ.） Package：1N（SMD） 800V 1A 6.8 ④ 品名略号 Type No. 特長 • 小型 DIP パッケージ 級表示（例） Class Feature

Contextual Info: デュアルインライン型 Bridge Diode Dual In-Line Package •外観図 OUTLINE S1NB□ Unit : mm Weight : 0.29g （typ.） Package：1N（SMD） 800V 1A 6.8 ④ 品名略号 Type No. 特長 • 小型 DIP パッケージ 級表示（例） Class Feature

Contextual Info: デュアルインライン型 Bridge Diode Dual In-Line Package •外観図 OUTLINE S1NBB80 Unit : mm Weight : 0.29g （typ.） Package：1NA 6.8 800V 1A ④ 品名略号 Type No. 特長 • 小型 DIP パッケージ • 端子間 3.4mm 級表示（例）

S1NBB80

Abstract: s1nbb 800V1A marking 6 bridge diode
Contextual Info: デュアルインライン型 Bridge Diode Dual In-Line Package •外観図 OUTLINE S1NBB80 Unit : mm Weight : 0.29g （typ.） Package：1NA 6.8 800V 1A ④ 品名略号 Type No. 特長 • 小型 DIP パッケージ • 端子間 3.4mm 級表示（例）

s1nbb

Abstract: S1NBB80 diode code 6_8
Contextual Info: デュアルインライン型 Bridge Diode Dual In-Line Package •外観図 OUTLINE S1NBB80 Unit : mm Weight : 0.29g （typ.） Package：1NA 6.8 800V 1A ④ 品名略号 Type No. 特長 • 小型 DIP パッケージ • 端子間 3.4mm 級表示（例）

s1nb

Abstract: S1NB60 45 S1NB80 S1NB60 S1NB20 BRIDGE DIP 1A s1nb6094 S1NB60 15
Contextual Info: デュアルインライン型 Bridge Diode Dual In-Line Package •外観図 OUTLINE S1NB□ Unit : mm Weight : 0.29g （typ.） Package：1N（SMD） 6.8 800V 1A ④ 品名略号 Type No. 特長 • 小型 DIP パッケージ 級表示（例） Class Feature