1SS420 Search Results

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 1SS420PT SURFACE MOUNT SWITCHING DIODE VOLTAGE 85 Volts CURRENT 0.15 Ampere APPLICATION * Ultra high speed switching SC-79/SOD-523 FEATURE * Small surface mounting type. SC-79/SOD-523 * High speed. (TRR=4.0nSec Typ.) * Suitable for high packing density.

1SS420

Contextual Info: 1SS420 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420 High-Speed Switching Applications • Unit: mm Low reverse current: IR = 5 A max Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 35 V Reverse voltage VR 30

Contextual Info: 1SS420 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420 High-Speed Switching Applications • Unit: mm Low reverse current: IR = 5 A max Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 35 V Reverse voltage VR 30

Contextual Info: 1SS420CT 東芝ダイオード エピタキシャルショットキバリア形 1SS420CT ○ 高速スイッチング用 : IR = 5 A 最大 せ ん 目 頭 逆 逆 記 電 電 号 定 格 単位 圧 VRM 35 V 圧 VR 30 V せ ん 頭 順 電 流 IFM 300 mA

1ss420

Contextual Info: 1SS420 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE High Speed Switching Application Features • Low reverse current: IR=5µA max. Absolute Maximum Ratings (Tj = 25℃) Parameter Symbol Value Unit Peak Reverse Voltage VRM 35 V Reverse Voltage VR 30 V

Contextual Info: 1SS420CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420CT High-Speed Switching Applications Unit: mm Characteristics Maximum peak reverse voltage Symbol Rating Unit VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 300 mA

General Semiconductor diode marking s6

Abstract: 1ss420
Contextual Info: 1SS420 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420 High-Speed Switching Applications • Unit: mm Low reverse current: IR = 5 µA max Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current

1ss420

Contextual Info: 1SS420 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE For high speed switching application Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak Reverse Voltage VRM 35 V Reverse Voltage VR 30 V Peak Forward Current IFM 300 mA Average Forward Current

1ss420

Contextual Info: 1SS420 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE High Speed Switching Application Features • Low reverse current: IR=5µA max. Absolute Maximum Ratings (Tj = 25℃) Parameter Symbol Value Unit Peak Reverse Voltage VRM 35 V Reverse Voltage VR 30 V

Contextual Info: 1SS420CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420CT High-Speed Switching Applications Unit: mm Characteristics Maximum peak reverse voltage Symbol Rating Unit VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 300 mA

1SS420GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 1SS420GP SURFACE MOUNT SWITCHING DIODE VOLTAGE 85 Volts CURRENT 0.15 Ampere APPLICATION * Ultra high speed switching SC-79/SOD-523 FEATURE * Small surface mounting type. SC-79/SOD-523 * High speed. (TRR=4.0nSec Typ.) * Suitable for high packing density.

General Semiconductor diode marking s6

Abstract: s6 general semiconductor GENERAL SEMICONDUCTOR MARKING s6
Contextual Info: 1SS420 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420 High-Speed Switching Applications • Unit: mm Low reverse current: IR = 5 A max Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 35 V Reverse voltage VR 30

1SS420

Contextual Info: 1SS420 東芝ダイオード エピタキシャルショットキバリア形 1SS420 ○ 高速スイッチング用 : IR = 5 A 最大 逆電流が小さい。 絶対最大定格 (Ta = 25°C) 項 せ ん 目 頭 逆 逆 記 電 電 号 定 格 単位 圧

1ss420

Abstract: marking code R
Contextual Info: 1SS420 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for high speed switching application PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 R Top View Marking Code: "R" Simplified outline SOD-523 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

Variable Capacitance Diodes

Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

TA48033AF

Abstract: ta4805af TA4805AS 1SS389 1SS420 SSOP16 1500-nm TSSOP-838 TC93A04 TC93A05FNG
Contextual Info: C O N T E N T S 東芝半導体情報誌アイ 2004年11月号 11 今月の新製品情報 VOLUME 148 光ディスク用レーザードライバ .2 1Aロードロップアウトレギュレータ.2 低リーク電流低順方向電圧

DF2S3.6SC

Abstract: TC7SZ34FU FSV 052 TC7SZ34F TC7SZ17FU 1SS421 TC7SZ02F TC7SZ08FU 1SS417 TC7SZ00AFS
Contextual Info: 【正誤表】 下記内容に誤記載がありましたので正誤表を添付させていただきます。 •資料名: 汎用小信号面実装対応素子 （トランジスタ、 ダイオード、 セルパック） ■資料番号： BCJ0052E

LT 543 common cathode

Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current

wa sot23

Abstract: BAV99TPT 1SS355PT CHBD2004SPT CHP202UPT CH204UPT SOT 23 A7 diode 5d sot 23 CHN202UPT Diode SOT-23 marking JE
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Maximum Maximum Maximum Maximum Reverse Peak Average Forward Peak Current Reverse Rectified Surge Current Marking @ 25°C TA Voltage Current @ 1S IO IFM Surge IR

TPCA*8030

Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S

CMG03

Abstract: 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2009-8 SCE0004I Rectifiers General-Purpose Rectifiers Average Forward Current A

2fu smd transistor

Abstract: 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 256 Zener Diodes z 257 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A