1SS250 Search Results

Contextual Info: TOSHIBA 1SS250 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS250 Unit in mm HIGH SPEED SW ITCHING APPLICATIONS. • Low Forward Voltage • Fast Reverse Recovery Time • Sm all Total Capacitance : C¡T = 1.5pF Typ. • Sm all Package : SC-59 + 0.5 2 . 5 - 0 .3

Contextual Info: 1SS250 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS250 Unit in mm Ultra High Speed Switching Application Low forward voltage : VF 2 = 0.90V (typ.) Fast reverse recovery time : trr = 60ns (typ.) Small total capacitance : CT = 1.5pF (typ.) Small package

1SS250

Contextual Info: 1SS250 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS250 Unit: mm Ultra High Speed Switching Application z Low forward voltage : VF 2 = 0.90V (typ.) z Fast reverse recovery time : trr = 60ns (max) z Small total capacitance : CT = 1.5pF (typ.) z Small package

1SS250

Contextual Info: 1SS250 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS250 Unit: mm Ultra High Speed Switching Application z Low forward voltage : VF 2 = 0.90V (typ.) z Fast reverse recovery time : trr = 60ns (max) z Small total capacitance : CT = 1.5pF (typ.) z Small package

1SS250

Contextual Info: 1SS250 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS250 Unit: mm Ultra High Speed Switching Application l Low forward voltage : VF 2 = 0.90V (typ.) l Fast reverse recovery time : trr = 60ns (typ.) l Small total capacitance : CT = 1.5pF (typ.) l Small package

1SS250

Abstract: VR200
Contextual Info: 1SS250 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS250 ○ 高電圧スイッチング用 z z z z : : : : 外形が小さい。 順方向特性が良い。 逆回復時間が短い。 端子間容量が小さい。 単位: mm

012g

Abstract: 1SS250
Contextual Info: 1SS250 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS250 Unit: mm Ultra High Speed Switching Application Low forward voltage : VF 2 = 0.90V (typ.) Fast reverse recovery time : trr = 60ns (typ.) Small total capacitance : CT = 1.5pF (typ.) Small package : SC−59

Contextual Info: TOSHIBA 1SS250 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS250 HIGH SPEED SWITCHING APPLICATIONS. U nit in mm + 0.5 2 .5-0.3 • Low Forward Voltage : Vp 2 = 0.90V (Typ.) • Fast Reverse RecoveryTime : • Small Total Capacitance : Ct = 1.5pF (Typ.)

Contextual Info: 1SS250 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS250 Unit: mm Ultra High Speed Switching Application l Low forward voltage : VF 2 = 0.90V (typ.) l Fast reverse recovery time : trr = 60ns (typ.) l Small total capacitance : CT = 1.5pF (typ.) l Small package

Contextual Info: TOSHIBA 1SS250 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS250 Unit in mm HIGH SPEED SW ITCHING APPLICATIONS. • Low Forward Voltage • Fast Reverse Recovery Time • Sm all Total Capacitance : C¡T = 1.5pF Typ. • Sm all Package : SC-59 + 0.5 2 . 5 - 0 .3

1SS250

Contextual Info: TOSHIBA_ 1SS250 1 SS250 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm HIGH SPEED SWITCHING APPLICATIONS. • • • • Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package

1SS250

Abstract: ha 1141
Contextual Info: SILICON EPITAXIAL PLANAR TYPE 1SS250 HIGH SPEED SWITC HING AP PLICATIONS. Unit in mm . Low Forward Voltage :V f =0.9V Typ. + 0.5 2 5-0 3 . Fast Reverse Recovery Time : trr=l•6ns(Max.) . Small Total Capacitance :CT=1•5pF(Typ.) . Small Package :SC-59 + 0 .2 5

1S1585

Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
Contextual Info: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80

transformerless variable frequency drive

Abstract: SM8141B LDR resistor ldr datasheet Circuit diagram of LDR LDR 03 LDR FUNCTION LDR -03 CF8141A CF8141B
Contextual Info: SM8141 EL Driver OVERVIEW The SM8141 is a transformer-less electroluminescent EL sheet lamp driver, capable of driving sheets up to 50cm2 in size. It employs built-in high withstand voltage output MOS transistors and requires few external components, making it ideal for compact driver units in portable equipment.

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

Variable Capacitance Diodes

Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

DIODE marking S4 59A

Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Contextual Info: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3

Circuit diagram of LDR

Abstract: LDR Datasheet LDR -03 100V transformerless power supply circuit ldr 05 ldr 1000 ldr 07 ldr resistor LDR 20K circuit design of ldr
Contextual Info: SM8142 EL Driver OVERVIEW The SM8142 is a transformer-less electroluminescent EL driver IC, capable of driving sheets up to 30 cm2 in size. It employs a high-efficiency driver output circuit configuration to control power dissipation. It is available in ultra-small 8-pin SON (Small Outline Non-leaded) packages*, making possible the construction of small,

LDR 03

Abstract: ldr 05 LDR -03 2 pin ldr SM8144BV 1SS250 D73LC SM8144B murata dd LDR circuit
Contextual Info: SM8144B EL ドライバ IC •概要 SM8144B はトランスレス化を実現した EL Electro Luminescence 用ドライバ IC です。最大 70cm2 程度の EL を発光 させることができます。コイルスイッチングトランジスタの オン抵抗、および出力回路の見直しに

11507a

Abstract: 11508A LDR 03 SM8141BV LDR -03 CF8141A CF8141B SM8141 SM8141A SM8141AV
Contextual Info: SM8141 EL ドライバ IC •概要 SM8141 はトランスレス化を実現した EL Electoroluminesce シート用ドライバ IC です。 最大 50cm2 程度の EL シートをドライブすることができます。高耐圧出力 MOS トランジスタを内蔵しているため外付け部品が少

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

LDR -03

Abstract: EL driving 8144BV LDR 03
Contextual Info: SM8144B 高効率 EL ドライバ IC NIPPON PRECISION CIRCUITS INC. •概要 SM8144B はトランスレス化を実現した EL Electro Luminescence 用ドライバ IC です。 最大 70cm2 程度の EL を発光させることができます。コイルスイッチングトランジスタのオン抵抗、および

SM8145A

Abstract: 1SS2
Contextual Info: SM8145A Dual EL ドライバ IC NIPPON PRECISION CIRCUITS INC. •概要 SM8145A は2 つの EL を駆動することができる EL ドライバ IC です。 各 EL の点灯 / 消灯は 2 つの ENA 端子により独立して制御することができ、2 枚同時点灯も可能です。