1N6263 Search Results

smd marking sb

Abstract: 1N6263W marking SB
Contextual Info: Diodes SMD Type SMALL SIGNAL DIODES 1N6263W SOD-123 Unit: mm 2.7 +0.05 1.1-0.05 +0.1 0.55-0.1 +0.1 -0.1 +0.1 1.6-0.1 Features Low Forward Voltage Drop +0.1 3.7-0.1 Guard Ring Constuction for Transient Protection Fast Switching Time 0.50 0.1max 0.35 +0.05 0.1-0.02

Contextual Info: I n ter n a tio n a l 1N6263 S e m ic o n d u c to r , I n c . SCHOTTKY BARRIER DIODES 1 :o FEATURES H erm etically Sealed M e ta lu rg ic a lly Bonded D ouble Plug C onstruction .0 6 8 /.0 7 3 1 .7 3 /1 .9 3 1.00 2 5 .4 M in MAXIMUM RATINGS O p e ra tin g T em p e ra tu re :

Contextual Info: Product specification 1N6263W SOD-123 Unit: mm 2.7 +0.05 1.1-0.05 +0.1 0.55-0.1 +0.1 -0.1 +0.1 1.6-0.1 Features Low Forward Voltage Drop +0.1 3.7-0.1 Guard Ring Constuction for Transient Protection Fast Switching Time 0.50 0.1max 0.35 +0.05 0.1-0.02 Low Reverse Capacitance

1n5711 diode

Contextual Info: 1N5711 / 1N6263 Schottky Barrier Diode Features 1. For general purpose applications. 2. Metal-on-silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1N6263 1N5711 Features • • • • 400 mWatt Small Signal Schottky Diode 60 to 70 Volts High Reverse Breakdown Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode 1N6263W SCHOTTKY DIODE SOD-123 Features 1.05 • · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance

BAT49

Abstract: BYV1060 BYV10-60 TMMBAT43 bat41 bat43 BAS70 MELF BAT43 BAT47 BYV10-40 DO35
Contextual Info: POWER RECTIFIERS SIGNAL SCHOTTKY DIODES DO35 Voltage max Current DO41 Part Number 20 Volts 350 mAmps BAT47 30 Volts 200 mAmps BAT42 BAT43 TMMBAT42 TMMBAT43 40 Volts 350 mAmps BAT48 TMMBAT48 1000 mAmps BYV10-40 TMBYV10-40 60 Volts 15mAmps 1N6263 TMM6263 1000 mAmps

Contextual Info: 1N5711 AND 1N6263 Schottky Diodes FEATURES DO-35 ♦ For general purpose applications. ♦ Metal-on-silicon Schottky barrier X device which is protected by a PN X. junction guard ring. The low forward M voltage drop and fast switching make it , ideal for protection of MOS devices, steering,

1N6263

Abstract: Scans-00155669
Contextual Info: B K C INTERNATIONAL 30E D • 117t1eîÔ3 0000356 b ■ ' T * 0 3 - O ci 1N6263 Silicon Schottky Barrier Diodes for general purpose applications Special Features: Low Forward Voltage Subnanosecond Switching Glass Hermetic Package Description The 1N6263 is a metal on silicon Schottky barrier device

1N6263

Contextual Info: visHAY 1N6263 SCHOTTKY BARRIER SWITCHING DIODE y LITEM ZI POWER SEMICONDUCTOR Features • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance I Mechanical Data_ •

Transistor S8550 2TY

Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250

sd101

Abstract: LL101A
Contextual Info: SDIOIA 1N6263 . SDIOIC, SD101AW . SD101CW Silicon Schottky Barrier Diodes for general purpose applications. The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for

Contextual Info: SPICE MODEL: 1N6263W 1N6263W Lead-free SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • · · · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection SOD-123 Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion

1N5817

Abstract: 1N5818 1N5819 1N6263 SD101A SD101B SD101C SD103A SD103B SD103C
Contextual Info: SCHOTTKY BARRIER PLASTIC RECTIFIERS 1 .0 m A Peak Inverse Voltage Peak Forward Surge Current @ 8.3ms Superimposed Maximum Forward Voltage @ Ta 25°C @ Rated lo Maximum Reverse Current @ 2 5 ’C @ Rated PIV PIV V Ifsm W Vfw(V) Ir (mA) 60 50 mA 2 Part# 1N6263

1N6263W

Contextual Info: 1N6263W SOD-123 Features • · 2.70 1.6 · · · 1.05 Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion Maximum Ratings 0.55 3.70

1N6263

Abstract: LL6263
Contextual Info: 1N6263 DO-35 FEATURES For general purpose applications 1.083MIN. junction guard ring.The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and 0.079 2.0 MAX DIA MECHANICAL DATA Case: DO-35 Glass CASE

Contextual Info: SPICE MODEL: 1N6263W 1N6263W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • · · · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection SOD-123 Fast Switching Time Dim Min Max Surface Mount Package Ideally Suited for Automatic Insertion

Contextual Info: 1N6263WT SILICON SCHOTTKY BARRIER DIODE for general purpose applications PINNING DESCRIPTION PIN The 1N6263WT is a metal on silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make

general purpose diode marking code -08

Contextual Info: 1N6263WT SILICON SCHOTTKY BARRIER DIODE for general purpose applications PINNING DESCRIPTION PIN The 1N6263WT is a metal on silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for

Contextual Info: 1N6263WT SILICON SCHOTTKY BARRIER DIODE for general purpose applications PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 I Top View Marking Code: "I" Simplified outline SOD-523 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit VRRM

Contextual Info: 1N5711 / 1N6263 Schottky Barrier Diode Features 1. For general purpose applications. 2. Metal-on-silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of

DS1101

Abstract: 1N6263W 1N6263W-7-F
Contextual Info: 1N6263W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • • • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1N6263 1N5711 Features • • • • 400 mWatt Small Signal Schottky Diode 60 to 70 Volts High Reverse Breakdown Voltage

SEMICONDUCTO applications

Abstract: DSAIH0002555 melf Schottky glass
Contextual Info: DO-35 Glass Applications 1 1N5711, 1N6263& SD101 series Schottky Diodes Guard ring protected schottky barrier. Low forward drop. Fast switching, higJ* ! f rformance replacement for small signal devices. Exce|ent applications. DO -35 Glass Package * Six Sigma; quality