1N4152 Search Results

Contextual Info: DIGITRON SEMICONDUCTORS 1N4149, 1N4151-1N4154, 1N4446-1N4449 SWITCHING RECTIFIER MAXIMUM RATINGS @ 25°C Parameter Symbol 1N4149 1N4151 1N4152 1N4153 VRM 75V 75V 40V 75V Peak reverse voltage Average rectified current IO Forward surge current, 8.3ms Operating junction temperature range

In5062

Abstract: in 5062 1N4007W 1N4007 toshiba diode 1n4007 toshiba SCR 1 c106d 1N4004 toshiba 1N5059 diode scr 2n6396 1N4007 rectifier diode
Contextual Info: 9097250 TOSHIBA CDI S C R E T E /O P T O TOSHIBA -CDISCRETE/OPTOJ 9 0D 16494 DE § /3 □OlkMTM 7 Diodes Switching Diode DO-35) VB(V) lo(MA) 2 5 (3 0 ) 50 1N4152 1N4150 1N 4151 1N 4153 \ 150 200 70 1N4150 1N 4606 50 70 75 1 N 914, A , B 1 N 916, A , B 1 N 4149

Contextual Info: 1N4152 HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • High switching speed: max. 4 ns • Peak reverse voltage:max. 40 V • Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8) max. Cathode Mark MECHANICAL DATA : 1.00 (25.4) min.

1n4153

Abstract: DSAIH0002540
Contextual Info: / □BE D I 1 1 ? 3 B K C INTERNATIONAL QQDGSÛ5 T | ~ 7 -0 3 -Ô 1 HIGH SPEED DIODES 1N4151 1N4153 • 1N4152 1N4154 ABSOLUTE MAXIMUM RATINGS • T_ • C 2.0 ns @ 10 mA, -6V, 100Î2 4 pF .0 2 0 * D IR Storage Temperature Range Maximum Junction Operating Temperature

DO-35 PACKAGE

Abstract: DSAIH000251
Contextual Info: B K C INTERNATIONAL 3 Silicon Switching !Diodes for Computer Applications in DO-35 Package I Type BAW75 BAW76 BKC600 BKC666 BKC900 BKC999 1N625 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N3064 1N3600 1N4009 1N4148 1N4149 1N4150 1N4151 1N4152 1N4153 1N41S4 1N4446

Contextual Info: One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 1N4152 DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Parameter Symbol VfiRM TA=25-0Unie«otn«wisenoted Value

1N4536

Abstract: 1n4531
Contextual Info: TYPES 1N4531 THRU 1N4534, 1N4536 SILICON SWITCHING DIODES B U L L E T I N N O . D L -S 7 3 9 7 7 4 , M A R C H 1 9 6 7 - R E V I S E D M A R C H 1 9 7 3 FAST SWITCHING DIODES • Rugged Double-Plug Construction Electrical Equivalents 1N4531 . . . 1N4148 . . . 1N914

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

914B

Abstract: 1N3600 DO-35 1n4147 IR D4-D4 IR diode D4-D4 1N3064 1N4009 1N625 1N914A
Contextual Info: NATL S E M ICONO HE D IS C R E T E D I National Semiconductor t.S Q H 3 Q 0031^0 B | g T-OI-OÌ * sr Computer Diodes Glass Package VF V c *rr na Max Teat Cond. Proc. No. 1000 (Note 1) D4 4 (Note 2) D4 20 4 (Note 2) D4 0.72 1.0 5 100 4 (Note 2) D4 20 75 1.0

1n9148

Abstract: IR diode D4-D4 1N3064 1N4148 1N4149 1N4150 1N914 1N914A 1N914B 1N916
Contextual Info: Switching Diodes Computer Diodes Glass Package V R RM Device No. Package No. (V) R (nA) C V @ R <V> Max @ Ja) <PF> (ns) Max Max Test Cond. Process No. Min . Max (V> 1N914 DO-35 100 25 5000 20 75 1 10 4 4 (Note 2) D3 1N914A DO-35 100 25 5000 20 75 1 20 4

c 337 25

Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3

1N4149

Abstract: 1N4150 1N4152 1N4153 1N4447 1N4449 1N4454 1N914
Contextual Info: CE 1N914 THRU 1N4454 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE FEATURES . Silicon epitaxial planar diode . Fast swithching diodes . 1N4149, 1N4447, 1N4449 are also avaible in glass case DO-34 MECHANICAL DATA . Case: DO-35 glass case . Polarity: Color brand denotes cathode end

1N4151 equivalent

Abstract: Diode Equivalent 1n4151 1N4532 1N4152 1N4151 1N4153 1N4154 1N4454 MHD618 in4454
Contextual Info: 1N4154 S E E PAG E 205 Silicon r -— i Diodes 1N4151.2.3 1N4454 1N4532,3,4 This fam ily of General Electric silicon signal diodes are very high speed sw itching diodes for computer circuits and general purpose applications. These diodes incorporate an oxide passivated planar struc­

JANTX 1N916

Abstract: diode 1n4446 DA-Series 1n4148 D035 1N4532 1N916 JANTX general electric 1n4727 1N4148.1N4448 1N4148 1N4151
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES P a rt N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M a x. (ri A ) @ V r (V) V f (V ) M a x. @ I f (m A ) Co @ DV (pf) 1N914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N914B 100 25 20 1.00 100 1N916 100 25 20

FD100

Abstract: 1N408 FD600 N4376 1N4148 JANTX 1n4376 equivalent 1N5317 1N916B 1N4086 1n916 equivalent
Contextual Info: DIODES COMPUTER DIODES BY ASCENDING t R R GLASS PACKAGE *RR Bv C Package If pF Equivalent mA MAX Package .75 0.8 DO-7 DO-7 VF ns VOLTS nA •r @ TYPE M AX MIN MAX @ FD700 0.70 30 50 @ 15 1N4244 0.75 20 100 @ 1 N4376 0.75 20 100 1N4376 JAN 0.75 20 FD777

SS321 equivalent

Abstract: DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 SE708 2N2222 chip 2N2369 transistor DZ800 MA1703
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Continued U @ 25°C BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf Max. Max. @ Vr(V) 30 20 100 Co @ OV @ lF(mA) (V) 1.00 1.00 (pif) (nsec) Package Type trr Package Outline No. Specification Sheet No. 50 2 4

Contextual Info: $ 4 # — K /D iodes IN S e rie s • JEDEC 1N Series 1 -K Switching Diodes JEDEC Standards • [2/Dimensions Unit : mm JED EC « fè&LLZ, £<7>1N v ' J - X f c t l i t l , T Î S ^ Î - Î '< 7 ) T '^ W < tc è^ \ 1N Series conforming to JEDEC Standards are also available so that

2N2926 equivalent

Abstract: beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A

Contextual Info: SWITCHING DIODES 200mW Part# Peak Voltage Continous Reverse Current VI B V 1N914 1N914A 1N914B I r <"A> 100 100 100 @ Forward Voltage VR (V) 5000 @ 5000 @ 5000 @ Capacitance C Maximum Reverse Recovery Time VF (V) @ lF (mA) <PF) V (n S ) 1.0 1.0 1.0 @ @ @

1n4149

Abstract: 1N4153 silicon diodes 1N4151 1N4152 1N4153 1N4447 1N4449 1N4454 1N914
Contextual Info: 1N914.1N4454 SILICON EPITAXIAL PLANAR DIODES for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. Peak reverse voltage Max. aver. rectified current Max. power dissip. at 25℃ Max. junction temperature

RED Color band DIODES GLASS

Abstract: diodes 1N34A color N4009 1n270 1N34A reverse recovery 1N4009 RED Color band DIODES 1N295A 1N34A 1N34A do-35
Contextual Info: diodes T4 INCORPORATED DOODETfl 1 1~~ D D I 20407^3 s ~ BUTTON RECTIFIERS OPERATING AND STORAGE TEMPERATURE -6 5 °C to +175°C PRV V PK Maximum Average Rectified Current Half-Wave Resistive Load 60Hz lo > > < TYPE Maximum Peak Reverse Voltage Maximum Reverse

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

PNP Transistor 2N2222 equivalent

Abstract: DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent 2N2222 npn small signal current gain 2N2222 chip DIODE 1N9148 transistor npn high speed switching
Contextual Info: SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification Sheet No. 1 35.90 1N914B M46P-X510

in4151

Abstract: 1N4532 1N4148 1N4149 1N4151 1N4152 1N914 1N914A 1N914B 1N916
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part Number 1N914 1N 914A 1N 914B BV @ 100/1A Min. V I r @ 2 5 °C Max. (ri A) @ V r (V ) V f Max. (V ) @ I f (m A ) Co @ DV (pf) trr (77S E C ) Package Outline Package Outline Number 100 100 25 30 1.00 10 4 25 20 1.00