1EC134 Search Results

TDA2522

Abstract: TDA2540 TDA2541 TDA2560 TDA2560Q
Contextual Info: TDA2560 TDA2560Q RATINGS L i m i t i n g v a l u e s in a c c o r d a n c e with th e A b s o lu t e M a x i m u m S y s t e m 1EC134 V o lta g e S upply v o lta g e V s m ax. 14 max. 930 V Power dissipation T otal p ow er dissipation Ptot mW T em p eratu res

TDA2560

Abstract: TDA2522 TDA2540 TDA2541 TDA2560Q
Contextual Info: TDA2560 TDA2560Q RATINGS L im itin g values in a cc o r d a n c e with the Absolute M aximum System 1EC134 Voltage Supply voltage Vtl 8-5 max. 14 lax. 930 V Power dissipation T o ta l power dissipation Ptot mW T em peratures Storage t e m p e r a t u r e

Contextual Info: N AMER PHILIPS/DISCRETE 25E D • ^53= 131 00 20 7 0 0 7 BUK657-400A BUK657-400B PowerMOS transistor Fast Recovery Diode FET r - 37-/3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery

2045CTF

Abstract: 2040ct PBYR2045CTF PBYR2035CTF PBYR2040CTF 2045CT
Contextual Info: PBYR2035CTF PBYR2040CTF PBYR2045CTF N AUER PHILIPS/DISCRETE 25E D ^53^31 I 0052=173 ô E3 SC HOTTKY- BARRIER DOUBLE RECTIFIER DIODES 7=0 3-/9 Low-leakage p la tin u m -b a rrie r double re c tifie r diodes in SO T-186 fu ll-p a ck p lastic envelopes fe a tu rin g low fo rw a rd voltage dro p , lo w capacitance and absence o f stored charge. T h e ir e le ctrica l

TRANSISTOR A3

Abstract: transistor c 3274 BLW60 transistor c 1974 transistor wz blw60 philips carbon film resistor capacitor polyester philips trimmer 3-30 pf TRIMMER capacitor 5-60 pF trimmer PT 10
Contextual Info: -— . L I_ N AMER PHILIPS/DISCRETE ObE D 86D 0 1 4 7 0 D bbS3=î31 00137Ga T • T~ 3 /f BLW60 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial

Contextual Info: 1^53^31 0024352 b21 B A P X Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode •■■■— mmmm BAV23S N AUER PHILIPS/DISCRETE DESCRIPTION The BAV23S consists of two planar epitaxial high-speed diodes in one microminiature plastic envelope

Contextual Info: ,N AMER '- ° ~f PHILIPS/DISCRETE - — — ObE D - — - bbSBTBl 0015441 b BAS32 J T V - O f - P l HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32 is a planar epitaxial high-speed diode designed fo r fast logic applications. . This SM diode is a leadless diode in a hermetically sealed SOD-80 envelope w ith tin-plated metal discs at

TDA8703

Abstract: TDA8703T TDA87803 TDA8780
Contextual Info: Philips Semiconductors Video Products Product specification 8-bit high-speed analog-to-digital converter TDA8703 FEATURES APPLICATIONS GENERAL DESCRIPTION • 8-bit resolution • General purpose high-speed analog-to-digital conversion The TDA8703 is an 8-bit high-speed

SOT123 Package

Abstract: sot123 TRANSISTOR 2X5 BLV12
Contextual Info: P ro d u cT jg je H ica tjo n Philips Semiconductor* BLV12 VHF power transistor FEATURES • Emitter-ballasting resistors lor an optimum temperature profile • Excellent reliability • Withstands full load mismatch. QUICK REFERENCE DATA RF performance a t T^, = 25 °C In a common emitter test circuit.

t04d

Abstract: TDE8715D digital to analog converter ecu
Contextual Info: Preliminary specification Philips Semiconductors Integrated Circuits 8-bit high-speed analog-to-digital converter Mil. temp. FEATURES • 8-bit resolution • Sampling rate up to 50 MHz • High signal-to-noise ratio over a large analog input frequency range

Contextual Info: 3 U ta l tgjurjeyg: : e PBYR1635F PBYR1640F PBYR1645F N AMER PHILIPS/DISCRETE 25E D B tbSBTBl 0 0 2 2 ^ 3 S B 1 7^03-17 SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage platinum-barrier rectifier diodes in SOT-186 full-pack plastic envelopes, featuring low

Mullard Mullard quick reference guide

Abstract: CV7476 CV7143 CV8805 BZV46 CV 7476 mullard CV7099 CV7100 diode mullard germanium BYW 64 bridge rectifier
Contextual Info: The Mullard Technical Handbook i t made up of four sets of Books, each comprising several parts:Book 1 light blue Sem iconductor Devices Book 2 (orange) Valves and Tubes Book 3 (green) Com ponents, M aterials and Assem blies Book 4 (purple or dark blue)

eeab

Abstract: SV00733
Contextual Info: 74LVC544A Octal D-type registered transceiver, inverting 3-State Product specification Philips Semiconductors 1998 Jul 29 PHILIPS Philips Semiconductors Product specification 7At Octal D-type registered transceiver, inverting (3-State) /« -v w m A FEATURES

Contextual Info: N AflER PHILIPS/DISCRETE 25E ]> • bbS3T31 aaaQbTS 7 ■ PowerMOS transistor Fast Recovery Diode FET BUK655-500A BUK655-500B BUK655-500C T -3 7 -/ 3 GENERAL d e s c r ip t io n QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a

1645F

Abstract: 1640F PBYR1635F m2296 sot 763 PBYR1640F PBYR1645F
Contextual Info: a u te itE : PBYR1635F PBYR1640F PBYR1645F N AMER ESE PH ILIPS/DISCR ETE D B tbS B T B l 0 0 2 2 ^ 3 S B " ' ' 7^ 0 3 -1 7 SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage platinum -barrier rectifier diodes in SOT-186 full-pack plastic envelopes, featuring low

PCX82C200

Abstract: SOT117 PCA82C200TD
Contextual Info: Product specification P hilip* Sem iconductor* M icrocontroller Products Stand-alone CAN-controller 82C200 1 FEATURES 2 GENERAL DESCRIPTION • MJt-master architecture The PCA82C200; PCF82C200 hereafter generically referred to as PCX82C200 is a highly integrated