19SEP05 Search Results

Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. COPYRIGHT 2 LOC ALL RIGHTS RESERVED. FB REVISIONS DIST 00 LTR A DESCRIPTION REVISED ECR —05 —001 799 D DATE DWN APVD 19SEP05 c.w S.Y AS SHOWN : - 6 PITCH - ±0.1

Contextual Info: 4 TH IS DRAWING IS U N P U B LIS H E D . RELEASED FOR PUBLICATION A L L RIGHTS COPYRIGHT 2 3 — - LOC RESERVED. AD BY TYCO ELECTRONICS CORPORATION. REVISIONS □ IS T 00 LTR D E SC RIPTIO N H POSITION # PH OS APVD JDP DD 19SEP05 REVISED PER EC 0 S 1 2 - 0 2 7 3 - 0 5

Contextual Info: 4 TH IS DRAWING IS U N P U B LIS H E D . RELEASED FOR PUBLICATION A L L RIGHTS COPYRIGHT 2 3 — - LOC RESERVED. AD BY TYCO ELECTRONICS CORPORATION. REVISIONS D IST 00 LTR D E SC RIPTIO N H DWN DATE REVISED PER EC 0S12 - 0 2 7 3 - 0 5 APVD JDP DD 19SEP05

Contextual Info: 4 THIS DRAWING IS U N P U B LIS H E D . COPYRIGHT 2 3 RELEASED FOR PUBLICATION — - A LL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. LOC □ 1ST AD 00 R E V IS IO N S P LTR D ESC R IPTIO N H R E V IS E D PER DATE PHOS APVD JDP DD 19SEP05 EC 0 S 1 2 - 0 2 7 3 - 0 5

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 3 RELEASED BY TYCO ELECTRONICS CORPORATION. 2 FOR PUBLICATION LOC A LL RIGHTS RESERVED. R E VIS IO N S CE 16 LTR DESCRIPTION DATE A DWN APVD KH JD 19SEP05 1A MAXIMUM CONNECTOR INSERTION LOSS IS 0.5 dB D PLUS CABLE ATTENUATION OF 1.5 dB/km

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 3 RELEASED BY TYCO ELECTRONICS CORPORATION. 2 FOR PUBLICATION LOC A LL RIGHTS RESERVED. R E VIS IO N S CE 16 LTR DESCRIPTION DWN DATE A APVD KH JD 19SEP05 1A MAXIMUM CONNECTOR INSERTION LOSS IS 0.5 dB D PLUS CABLE ATTENUATION OF 1.5 dB/km

SI4310

Abstract: Si4310BDY
Contextual Info: Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.011 at VGS = 10 V 10 0.016 at VGS = 4.5 V 8.2 0.0085 at VGS = 10 V 14 0.0095 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si4340DY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC

Si4340DDY

Contextual Info: Si4340DDY Vishay Siliconix Dual N-Channel 20 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () 0.0085 at VGS = 10 V 0.0115 at VGS = 4.5 V 0.0070 at VGS = 10 V 0.0095 at VGS = 4.5 V ID (A)a 14.8 12.8

5499

Abstract: 71193
Contextual Info: Package Information Vishay Siliconix SOIC NARROW : 14ĆLEAD MILLIMETERS 14 13 12 11 10 9 Dim A A1 B C D E e H L Ø 8 E 2 3 4 5 6 7 D A 0.25 (GAGE PLANE) 1 H INCHES Min Max Min Max 1.35 1.75 0.053 0.069 0.10 0.20 0.004 0.008 0.38 0.51 0.015 0.020 0.18 0.23

Contextual Info: ST7263B LOW SPEED USB 8-BIT MCU FAMILY WITH UP TO 32K FLASH/ROM, DFU CAPABILITY, 8-BIT ADC, WDG, TIMER, SCI & I²C Memories – 4, 8, 16 or 32 Kbytes Program Memory: High Density Flash HDFlash , FastROM or ROM with Readout and Write Protection – In-Application Programming (IAP) and In-Circuit programming (ICP)

72f63

Abstract: 1165 JRC NE555 pulse generator SDIP32-SO24 IT12223 Loctite 2642 wd 969 usb STMicroelectronics trace code st72f63b Electronic ballast HID
Contextual Info: ST7263B LOW SPEED USB 8-BIT MCU FAMILY WITH UP TO 32K FLASH/ROM, DFU CAPABILITY, 8-BIT ADC, WDG, TIMER, SCI & I²C Memories – 4, 8, 16 or 32 Kbytes Program Memory: High Density Flash HDFlash , FastROM or ROM with Readout and Write Protection – In-Application Programming (IAP) and In-Circuit programming (ICP)

DO204AC

Abstract: DO-204AC RGP15M rgp15g RGP15J
Contextual Info: RGP15A thru RGP15M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV VRRM IFSM trr IR VF Tj max. 1.5 A 50 V to 1000 V 50 A 150 ns, 250 ns, 500 ns 5.0 µA 1.3 V 175 °C ted* n e t Pa

HD-20

Contextual Info: 7 T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED A LL C O P YR IG H T - B Y TYCO ELE C TR O N IC S FO R 5 4 2 3 P U B L IC A T IO N R IG H T S LOC RESERVED. D IS T 00 GP C O RP O RA TIO N. R E V IS IO N S LTR A REVISED PER DWN D E S C R IP T IO N DATE

Contextual Info: 7 8 T H IS D R A W IN G 15 U N P U B L IS H E D . RELEASED ALL C O P YR IG H T 2006 BY TYCO ELE C TR O N IC S FO R P U B L IC A T IO N R IG H T S lo c RESERVED. GP 0 0 C O RP O RA TIO N. R E V IS IO N S d is t ' — P~~| L fR I D E S C R IP T IO N I RELEASED PER EC 0 S 1 3 - 0 2 2 1 - 0 5

Contextual Info: BA157GP thru BA159GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV VRRM IFSM trr IR VF Tj max. 1.0 A 400 V to 1000 V 20 A 150 ns, 250 ns, 500 ns 5.0 µA 1.3 V 175 °C d* e t n Pate

Contextual Info: RGP15A thru RGP15M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV VRRM IFSM trr IR VF Tj max. 1.5 A 50 V to 1000 V 50 A 150 ns, 250 ns, 500 ns 5.0 µA 1.3 V 175 °C ted* n e t Pa

Contextual Info: Si4340DY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC

Contextual Info: DG300B, DG301B, DG302B, DG303B Vishay Siliconix CMOS Analog Switches DESCRIPTION FEATURES The DG300B, DG303B family of monolithic CMOS switches feature three switch configuration options SPST, SPDT, and DPST for precision applications in communications,

Contextual Info: THIS DRAWING IS UNPUBLISHED. LOC DIST AD R E V IS IO N S 39 LTR S1 1, D r .o i 6i - 0.41 r.o i oi 1, D c A\ 1 ,3 1, 2, 50, 51 ,99,1 00 1 , 2, 40, 41, 79, 80 1 , 2, 35, 36, 69, 70 1 , 2, 32, 33, 64. 65 1 , 2, 27, 28. 54. 55 1, 2, 50, 51 ,99,1 00 1, 2, 40,

Contextual Info: 4 TH IS DRAWING IS U N P U B LIS H E D . RELEASED FOR PUBLICATION A L L RIGHTS COPYRIGHT 2 3 — - LOC RESERVED. D IST AD BY TYCO ELECTRONICS CORPORATION. R E V IS IO N S 00 LTR D E SC RIPTIO N H DATE REVISED PER EC 0 S 1 2 - 0 2 7 3 - 0 5 APVD DWN JDP DD

Contextual Info: ST7263B LOW SPEED USB 8-BIT MCU FAMILY WITH UP TO 32K FLASH/ROM, DFU CAPABILITY, 8-BIT ADC, WDG, TIMER, SCI & I²C • ■ ■ ■ ■ Memories – 4, 8, 16 or 32 Kbytes Program Memory: High Density Flash HDFlash , FastROM or ROM with Readout and Write Protection

ignition module

Abstract: RGP02-17E RGP02-17 rgp02
Contextual Info: RGP02-12E thru RGP02-20E Vishay General Semiconductor Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 0.5 V VRRM 1200 V to 2000 V IFSM 20 A trr 300 ns IR 5.0 µA Tj max. 175 °C DO-204AL (DO-41) Features Mechanical Data • Superectifier structure for High Reliability

72f63

Abstract: smd diode schottky code marking 1A ST7263BKX ic SMD MARKING CODE ad 5.9 wd 969 usb 3 phase motor soft starter diagram btf 16 4A 230 V 72f63b dali protections MARKING EA1
Contextual Info: ST7263BDx ST7263BHx ST7263BKx ST7263BE Low speed USB 8-bit MCU family with up to 32K Flash/ROM, DFU capability, 8-bit ADC, WDG, timer, SCI & I²C • ■ ■ ■ ■ Memories – 4, 8, 16 or 32 Kbytes program memory: high density Flash HDFlash , FastROM or ROM