19OCT09 Search Results

PICTURE TUBE 59

Abstract: MR611 1610 tube 1-1903978-1 805 tube tube 805 PICTURE TUBE mr+504+diode
Contextual Info: 107-68653 Packaging Specification 19Oct09 Rev K UPM CONNECTOR 1. PURPOSE 目的 Define the packaging specification and packaging method of UPM. 订定 UPM 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围 TYPE TYPE A Part Number Description

Contextual Info: SB520 thru SB560 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106

Contextual Info: SB320 thru SB360 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation

SB520

Abstract: SB530 SB540 SB560 J-STD-002
Contextual Info: SB520 thru SB560 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106

DO-204AC

Abstract: J-STD-002 SB320S SB330S SB360S sb340s SB360S-E3
Contextual Info: New Product SB320S thru SB360S Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • 20 kV ESD capability • Solder dip 275 °C max. 10 s, per JESD 22-B106

MMBZ5251-V-G

Abstract: 18672 731 zener diode MMBZ5244-V-G MMBZ5248-V-G MMBZ5231-V-G
Contextual Info: MMBZ5225-V-G to MMBZ5267-V-G Vishay Semiconductors Small Signal Zener Diodes Features • Silicon planar power zener diodes • Standard zener voltage tolerance is ± 5 % with a “B” suffix e.g.: MMBZ5225B-V-G , suffix “C” is ± 2 % tolerance • High temperature soldering guaranteed:

2322 193 vishay

Contextual Info: LSR37 Vishay BCcomponents High Voltage Surge Metal Glaze Leaded Resistor FEATURES • High pulse-loading 10 kV as specified capability (flashes) • Good replacement for carbon-composite resistors • Lead (Pb)-free solder contacts • Pure Tin plating provides compatibility with lead (Pb)-free

Contextual Info: New Product SB120A thru SB160A Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation

Contextual Info: New Product SB320S thru SB360S Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • 20 kV ESD capability • Solder dip 275 °C max. 10 s, per JESD 22-B106

Contextual Info: New Product SB320S thru SB360S Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • 20 kV ESD capability • Solder dip 275 °C max. 10 s, per JESD 22-B106

65530

Abstract: SQJ844EP
Contextual Info: SQJ844EP Vishay Siliconix Automotive Dual N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd

SUP90N03-03

Abstract: 288a A7560
Contextual Info: SPICE Device Model SUP90N03-03 Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

si4532cdy

Contextual Info: SPICE Device Model Si4532CDY Vishay Siliconix N-Channel and P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel and p-channel vertical DMOS. The subcircuit model is extracted and optimized over

30259

Abstract: 33152 12NC ordering code vishay ceramic capacitors SR037 SR37 SnPb40 Resistors 2306 K1000-H
Contextual Info: SR37 Vishay BCcomponents Surge Metal Film Leaded Resistor FEATURES • Metal film technology • High pulse load up to 10 kV capability • Replacement for carbon-composition resistors • Compatible with lead (Pb)-free and lead containing soldering processes

Contextual Info: GWS Vishay Draloric Vitreous Wirewound Resistors with Lugs FEATURES • • • • Complete welded construction Ceramic core High quality vitreous coating Available in adjustable = “E” or non inductive design = “Ni” • Lugs with various termination styles suitable for

SQ1912EEH-T1-GE3

Abstract: SQ1912EEH
Contextual Info: SQ1912EEH Vishay Siliconix Automotive Dual N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd

SQM110N06-04L

Contextual Info: SPICE Device Model SQM110N06-04L Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

SBYV27-100

Abstract: SBYV27-150 SBYV27-200 SBYV27-50 DO-204AC JESD22-B102 J-STD-002
Contextual Info: SBYV27-50 thru SBYV27-200 Vishay General Semiconductor Soft Recovery Ultrafast Plastic Rectifier FEATURES • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency • High forward surge capability

J-STD-002

Abstract: SB320 SB330 SB340 SB360 sb340-e3
Contextual Info: SB320 thru SB360 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation

VY2472M49Y5UG6

Abstract: marking code V5 102 Ceramic Disc Capacitors VY2103M63Y5US63V0 VY2222M35Y5US6 VY2-472 VY2472M49Y5US6 VY2332M41Y5UG6
Contextual Info: EMI/RFI Y2-VY2 Vishay Ceramic Disc Capacitors Safety Standard Approved Disc AC Capacitors FEATURES D • Complying with IEC 60384-14, 3rd edition T • High reliability • Vertical inline kinked or straight leads e = 3.0 mm max. SH = 4.0 mm max. • Compliant to RoHS directive 2002/95/EC and in

004B

Abstract: 104L 22R10 293D EIA535BAAC C293D106
Contextual Info: 293D Vishay Sprague Solid Tantalum Surface Mount Capacitors TANTAMOUNT Molded Case, Standard Industrial Grade FEATURES • Terminations: 100 % matte tin, standard, tin/lead available • Compliant terminations • Molded case available in six case codes

SB560A

Contextual Info: New Product SB520A thru SB560A Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation

VY2-222

Abstract: 471 Ceramic Disc Capacitors VY2-472 VY2-332
Contextual Info: EMI/RFI CapacitorS Key Benefits • Comply with IEC 60384-14, 3rd edition • ENEC-VDE, UL1414, and CSA approved • High reliability • WEEE/RoHS-compliant per EU directive 2002/95/EC • Halogen-free available • Small size • Vertical inline kink or straight leads

MARKING 05L

Contextual Info: GSOT05L-V Vishay Semiconductors Single-Line ESD-Protection in SOT23-3L Features • Single-line ESD-protection device • ESD-immunity acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge • Space saving SOT23-3L package • AEC-Q101 qualified