sfernice
Abstract: SH25 104M SH10 SH50 Vishay Sfernice 10 watt p 150 54 VISHAY 12W
Contextual Info: SH Vishay Sfernice Heatsink Encased Wirewound Power Resistors Industrial Applications FEATURES • ≤ 50 Watt at + 25°C • High power characteristics • Utilize heatsink capability • Good mechanical protection • Industrialized product Built for high power dissipation applications, these components have very good overall characteristics for industrial use
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19-feb-02sfernicesh25104m+5sh10sh50vishay sfernice 10 wattp 150 54vishay 12w
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SH25
Contextual Info: SH Vishay Sfernice Heatsink Encased Wirewound Power Resistors Industrial Applications FEATURES • ≤ 50 Watt at + 25°C • High power characteristics • Utilize heatsink capability • Good mechanical protection • Industrialized product Built for high power dissipation applications, these components have very good overall features for industrial use under
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1000h19-feb-02sh25 |
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E54214
Abstract: GBLA005 GBLA10
Contextual Info: GBLA005 thru GBLA10 Vishay Semiconductors New Product formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifiers Case Type GBL 0.825 20.9 0.815 (20.7) 0.125 (3.17) x 45 degrees Chamfer Reverse Voltage 50 and 1000V Forward Current 4.0A
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gbla005gbla10e54214x12mm+119-feb-02
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GBPC1005
Abstract: GBPC110
Contextual Info: GBPC1005 THRU GBPC110 Vishay Semiconductors formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifier Rectifier Reverse Voltage Case Style GBPC1 50 and 1000 V Rectifier Forward Current 3.0 A 0.630 16.00 Features 0.590 (14.98) 0.445 (11.30)
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gbpc1005gbpc110e5421419-feb-02 |
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Contextual Info: DBZ 012058, DGZ 020036 Vishay Draloric Feed-Through Capacitors, Screw Mounting min. 1 ø 14 0.551 DIA ø 25 " 36.8 ± 1.5 (1.45 ± 0.06) = min. 1 = 62 max. (2.441 max.) 0.58 +2 (2.283 +0.08) ø 12 0.5 (0.02) 0.5 (0.02) 20 ± 1 (0.787 ± 0.04) (0.984 DIA)
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Contextual Info: DBZ 012058, DGZ 020036 Vishay Draloric Feed-Through Capacitors, Screw Mounting min. 1 ø 14 0.551 DIA ø 25 " 36.8 ± 1.5 (1.45 ± 0.06) = min. 1 = 62 max. (2.441 max.) 0.58 +2 (2.283 +0.08) ø 12 0.5 (0.02) 0.5 (0.02) 20 ± 1 (0.787 ± 0.04) (0.984 DIA)
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18-jul-08 |
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M11 marking
Contextual Info: M10, M11, M12, M25 Vishay Draloric Thin Film, Rectangular, Resistor Chips FEATURES • Metal film layer on high quality ceramic • Protective top coat • SnPb contacts on Ni barrier layer • Excellent stability at different environmental conditions • Low TC and tight tolerances
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cecc40000en14040019-feb-02m11 marking |
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plc wiring diagram
Abstract: RJ45 WIRING diagram 8072C BEET
Contextual Info: 4 TH IS DRAWING IS U N P U B LIS H E D . 3 RELEASED FOR AL L COPYRIGHT PUBLICATION RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. D DIM A P2 MDD PLUG ¿i B ( P I ) 1 10 P L UG •> 2 rP ■>3 BLU WHT/BLU WIRING A AMP 1 4 7 1 - 9 l _ REV 31M A R 2000
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OCR Scan
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31mar20000b10-0024-0219feb02rev-ecd-08-024786+707dct0821feb20020/rj45plc wiring diagramrj45 wiring diagram8072cbeet
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Fixed resistor
Abstract: 100MS SFERNICE RW 16
Contextual Info: RW. Vishay Sfernice Fixed Wirewound Enamelled High Dissipation Resistors Application Guide GROUP ASSEMBLY It is recommended that resistors should be installed with a distance between centres of approximately twice their diameter to aid dissipation efficiency.
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19-feb-02fixed resistor100mssfernice rw 16 |
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BYV26d 800
Abstract: BYV26D BYV26E DO-204AP
Contextual Info: BYV26D and BYV26E Vishay Semiconductors formerly General Semiconductor Glass Passivated Ultrafast Rectifier Reverse Voltage 800 to 1000 V Forward Current 1.0 A DO-204AP Features 0.034 0.86 0.028 (0.71) DIA. * d e t n e t a P • • • • • 1.0 (25.4)
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byv26dbyv26edo-204apmil-s-19500+350mvp-p19-feb-02byv26d 800
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ADS7846 driver
Abstract: KEYPAD 4 x 4 ADS7846 SA-1110 TSC2000 TSC2200 UCB1300 keypad keyboard driver sa11x0 SBAA070
Contextual Info: Application Report SBAA075 – March 2002 Windows CE Touch and Keypad Device Drivers for the TSC2200 Bob Green and Rick Downs Data Acquisition Products ABSTRACT This application report describes the development and usage of device drivers for the TSC2200 PDA Analog Interface Circuit for use in Windows CE platforms on the Intel™
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sbaa075tsc2200sa-1110ads7846 driver+7keypad 4 x 4ads7846tsc2000ucb1300keypad keyboard driversa11x0sbaa070
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020036
Contextual Info: DBZ 012058, DGZ 020036 DBZ 012058 7.5KVp DGZ 020036 min.1 min. 0.04 Vishay Draloric Feed-Through Capacitors, Screw Mounting 5KVDC ø 25 (0.984 DIA) 36.8 ± 1.5 (1.45 ± 0.06) = min.1 min. 0.04 = 62 max. (2.441 max.) + 0.08 (2.283 58 +2 ) 0.5 (0.02) 20 ± 1
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SDHC PINOUT
Abstract: SDHC specification 9S12UF32 SDHC MECHANICAL SDHC memory reader PS3 usb sony ca6E MC9S12UF32 9S12UF32DGV1 0300-03FF
Contextual Info: MC9S12UF32 System on a Chip Guide V01.05 Original Release Date: 17 JAN 2002 Revised: 03 Dec 2004 TSPG - 8/16 Bit MCU Design, HKG Freescale Semiconductor, Inc. This product has been designed for use in “Commercial” applications. Please see a description below.
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mc9s12uf3264-pin9s12uf32dgv1/dsdhc pinout+8sdhc specification9s12uf32sdhc mechanicalsdhc memory readerps3 usb sonyca6e9s12uf32dgv10300-03ff
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300Ve
Abstract: VISHAY MARKING SG SG2403
Contextual Info: SG3, SG4 Vishay Sfernice Cemented Wirewound Resistors FEATURES • 3 Watt and 4 Watt at + 40°C • Cemented protection • Non flammability • Industrial applications DIMENSIONS in millimeters SG3 SG4 63 ±1 6 Ø A max. 25 min. 10 ±0,5 Ø 0,8 L max. 25 min.
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300veff150ppm/55/250/21s19-feb-02+3300vevishay marking sgsg2403
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Si4842DY
Abstract: NC1036 71482
Contextual Info: \\\ SPICE Device Model Si4842DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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si4842dy0-to-10v19-feb-02nc1036+171482
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Ceramic RF Power and HV Capacitors
Abstract: dwa 108 a kvp 42 DIODE KT 0803 K kvar schematic kvp 03 diode kvp 34 DIODE KVP 79 A dwa 108 Optoelectronics Device data
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book CERAMIC RF POWER AND HV CAPACITORS vishay DRALORIC vsD-db0048-0210 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vsd-db0048-0210ceramic rf power and hv capacitorsdwa 108 akvp 42 diode+7kt 0803 kkvar schematickvp 03 diodekvp 34 diodekvp 79 adwa 108optoelectronics device data
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GBL005
Abstract: GBL10 gbl 05
Contextual Info: GBL005 thru GBL10 Vishay Semiconductors formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifier Case Type GBL Reverse Voltage 50 and 1000 V Forward Current 4.0 A Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0
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gbl005gbl10e54214mil-std-750+3x12mm19-feb-02gbl 05
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DBZ 012058
Contextual Info: DBZ 012058, DGZ 020036 DBZ 012058 7.5KVp DGZ 020036 min.1 min. 0.04 Vishay Draloric Feed-Through Capacitors, Screw Mounting 5KVDC ø 25 (0.984 DIA) 36.8 ± 1.5 (1.45 ± 0.06) = min.1 min. 0.04 = 62 max. (2.441 max.) + 0.08 (2.283 58 +2 ) 0.5 (0.02) 20 ± 1
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GBLA10
Abstract: GBLA005
Contextual Info: GBLA005 thru GBLA10 Vishay Semiconductors New Product formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifiers Case Type GBL 0.825 20.9 0.815 (20.7) 0.125 (3.17) x 45 degrees Chamfer Reverse Voltage 50 and 1000V Forward Current 4.0A
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G3SBA20
Abstract: G3SBA60 G3SBA80
Contextual Info: G3SBA20 and G3SBA80 Vishay Semiconductors New Product formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifier Features Case Type GBU 0.125 3.2 x 45o CHAMFER 9o TYP. 0.160 (4.1) 0.140 (3.5) 0.310 (7.9) 0.290 (7.4) • Plastic package has Underwriters Laboratory
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Contextual Info: G4A thru G4J Vishay Semiconductors formerly General Semiconductor Glass Passivated Junction Rectifiers 0.180 4.6 0.115 (2.9) DIA. 1.0 (25.4) MIN. • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Hermetically sealed package
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4r85
Abstract: 020036
Contextual Info: DBZ 012058, DGZ 020036 DBZ 012058 7.5KVp DGZ 020036 min.1 min. 0.04 Vishay Draloric Feed-Through Capacitors, Screw Mounting 5KVDC ø 25 (0.984 DIA) 36.8 ± 1.5 (1.45 ± 0.06) = min.1 min. 0.04 = 62 max. (2.441 max.) + 0.08 (2.283 58 +2 ) 0.5 (0.02) 20 ± 1
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sfernice
Abstract: Ni Cr Wire
Contextual Info: SG3, SG4 Vishay Sfernice Cemented Wirewound Resistors FEATURES • 3 Watt and 4 Watt at + 40°C • Cemented protection • Non flammability • Industrial applications DIMENSIONS in millimeters SG3 SG4 63 ±1 6 Ø A max. 25 min. 10 ±0,5 Ø 0,8 L max. 25 min.
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150ppm/19-feb-02sferniceni cr wire |
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GBPC6005
Abstract: GBPC610
Contextual Info: GBPC6005 THRU GBPC610 Vishay Semiconductors formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifier Case Style GBPC 0.630 16.00 0.590 (14.98) Features 0.445 (11.30) 0.405 (10.29) HOLE FOR #6 SCREW 0.158 (4.01) • Plastic package has Underwriters Laboratory
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