SH25 Search Results
SH25 Datasheets (10)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SH25 | Vishay | Heat sink encased wirewound power resistors | Original | 40.1KB | 2 | ||
| SH250 | Littelfuse | Circuit Protection - Gas Discharge Tube Arresters (GDT) - GDT 250V 5KA 2 POLE SMD | Original | 705.03KB | |||
| SH250 | Unknown | SHELF VENTILATED SH250 | Scan | 26.24KB | 1 | ||
| SH250R11 | Unknown | Semiconductor Devices, Diode, and SCR Datasheet Catalog | Scan | 77.31KB | 1 | ||
| SH252 | Advani-Oerlikon | 150mA Iout, 150V Vrrm General Purpose Silicon Rectifier | Scan | 69.59KB | 1 | ||
| SH252A | Advani-Oerlikon | 150mA Iout, 150V Vrrm General Purpose Silicon Rectifier | Scan | 69.59KB | 1 | ||
| SH25A10LG | Microwave Technology | N-Channel UHF/Microwave JFET | Scan | 104.2KB | 2 | ||
HSH25P15
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Huashuo Semiconductor | P-Ch 150V Fast Switching MOSFET with -23A continuous drain current, 150 mΩ RDS(ON), advanced trench technology, low gate charge, 100% EAS tested, suitable for high-density power applications. | Original | ||||
HSH25P20
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Huashuo Semiconductor | P-Ch 200V Fast Switching MOSFET with 25A continuous drain current, 300mΩ typical RDS(ON), 56nC total gate charge, and 100% EAS guaranteed, suitable for high-density power applications. | Original | ||||
HSH250N10
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Huashuo Semiconductor | N-Ch 100V Fast Switching MOSFET with 250A continuous drain current, 1.9 mΩ RDS(ON), suitable for motor drivers, BMS, and high-frequency switching applications. | Original |
SH25 Price and Stock
Carlo Gavazzi Holding AG FSH-25Sensor: liquid level; -20÷121°C; OUT: SPST-NC; FS; polysulfone |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FSH-25 | 21 | 1 |
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Buy Now | ||||||
Bessey Tools GSH25Clamp; lever; Grip capac: max.250mm; D: 120mm; metalworks; classiX |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GSH25 | 2 | 1 |
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OMRON Corporation E3NC-SH250H 2MSensor: laser; Range: 250mm; diffuse-reflective; 2m; E3NC-S |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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E3NC-SH250H 2M | 1 |
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Get Quote | |||||||
Panduit Corp PWMS-H25-M0Holder; push-in; polyamide; UL94V-2; black; Tie width: 2.5÷4.8mm |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PWMS-H25-M0 | 1,000 |
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PWMS-H25-M0 | 1,000 |
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PWMS-H25-M0 | 425 |
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PWMS-H25-M0 | 6,008 |
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Micron Technology Inc MT47H128M8SH-25E IT:MIC: DRAM memory; 1GbDRAM; 128Mx8bit; 400MHz; TFBGA60; -40÷95°C |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MT47H128M8SH-25E IT:M | 1,518 |
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MT47H128M8SH-25E IT:M | Bulk | 231 | 1 |
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MT47H128M8SH-25E IT:M | 10 |
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MT47H128M8SH-25E IT:M | 10,000 |
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MT47H128M8SH-25E IT:M | 143 Weeks | 1,518 |
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SH25 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
1044CH
Abstract: 6554H CL-SH250
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OCR Scan |
16-bit/32-bitecc/56-bit1044ch+2 | |
hat25Contextual Info: SH Vishay Sfernice Heatsink Encased Wirewound Power Resistors Industrial Applications FEATURES • ≤ 50 W at + 25 °C • High power characteristics RoHS • Utilize heatsink capability COMPLIANT • Good mechanical protection • Industrialized product |
Original |
2002/95/ec2011/65/eu12-mar-12hat25 | |
e500v2
Abstract: MPC8544 JTAG connector Samsung Nexus S samsung emcp ordering information NV 15F PCI express PCB footprint MSC8101 TLC 1298 SRam program 61256 apple crypto
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mpc8544empc8544mpc8544ermel516+10 | |
SH250
Abstract: 2SC3550
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OCR Scan |
2sc3550l95t/r89sh250 | |
HSH300-14
Abstract: D1128 HSH250-13 HSH300-13 HSH300-12 HSH100-10 SE3001 HSH250-12 Calex HSH100-14
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OCR Scan |
90-132/180-264vac47--440hz115vac220vac+12 | |
EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
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OCR Scan |
eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6 | |
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Contextual Info: SH Vishay Sfernice Heatsink Encased Wirewound Power Resistors Industrial Applications FEATURES • ≤ 50 W at + 25 °C • High power characteristics RoHS • Utilize heatsink capability COMPLIANT • Good mechanical protection • Industrialized product |
Original |
2002/95/ec2011/65/eujs709a02-oct-12 | |
VGD15
Abstract: m1487 b1 ga15 engine wiring diagram M1487 M1489 VGD25 ga22 diode M1489 M1487 sc464 VPAD10
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Original |
am486m1489m1487-bs16+8 | |
sfernice
Abstract: SH25 104M SH10 SH50 Vishay Sfernice 10 watt p 150 54 VISHAY 12W
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Original |
19-feb-02sfernicesh25104m+5 | |
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Contextual Info: REVISION E NOTES: MUSBS-05-S-B-TH-XX-TR DESIGNED & DIMENSIONED 1. C REPRESENTS A CRITICAL DIMENSION. IN MILLIMETERS[INCHES] 2. MINIMUM PUSH OUT FORCE: 1N [.25 LB] 3. MAXIMUM HEIGHT VARIATION BETWEEN ANY TWO POSTS: 0.13[.005]. 4. MAXIMUM ALLOWABLE BOW: 0.05[.002] MM/MM AFTER ASSEMBLY. |
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musbs-05-s-b-th-xx-tror-104-01epoxy-01\dwg\misc\mktg\musbs-05-s-b-th-xx-tr-mkt | |
diode ba10 equivalents
Abstract: SH25 vishay resistor Vishay Sfernice BA10 SH10 SH50
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Original |
18-jul-08diode ba10 equivalentssh25vishay resistor+4 | |
SH25Contextual Info: SH Vishay Sfernice Heatsink Encased Wirewound Power Resistors Industrial Applications FEATURES • ≤ 50 Watt at + 25°C • High power characteristics • Utilize heatsink capability • Good mechanical protection • Industrialized product Built for high power dissipation applications, these components have very good overall features for industrial use under |
Original |
1000h19-feb-02sh25 | |
circuit diagram of luminous inverter
Abstract: nb24064 LC7981 VR10K 6 volt dc to 110v ac inverter circuit diagram LC7981 240 64
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nb24064b-seriesno360nb24064bsh-2530+6 | |
LCD-240G064B
Abstract: LC7981 LC7981 240 64
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lcd-240g064blc798108-apr-05lc7981 240 64 | |
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MPC8548
Abstract: e500v2 pcb connector 4 pin push button MPC8548ERM circuit diagram samsung ml 1866 7912 TO-3 lteir-transfer DFN PACKAGE thermal resistance MPLS et VPN NV 15F
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mpc8548empc8548mpc8547empc8545e+13 | |
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Contextual Info: Ultra-compact CMOS Smart Laser Sensor E3NC-S CSM_E3NC-S_DS_E_6_1 A Ultra-compact CMOS Laser Sensor for Stable Detection without the Influence of Workpiece Color, Material, or Surface Conditions • Dynamic range of 500,000 times for stable detection without |
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QorIQ Debug and Performance Monitoring
Abstract: mesa Toshiba MeP secure toshiba mep architecture
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p3041p3041rmqoriq debug and performance monitoringmesa+2 | |
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Contextual Info: Freescale Semiconductor Application Note Document Number: AN4580 Rev. 0, 12/2012 i.MX 6SoloLite Power Consumption Measurement by Freescale Semiconductor, Inc. This application note helps the user design power management systems. Through several use cases, this report |
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an4580 | |
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Contextual Info: MICROWAVE TECHNOLOGY 37E biam oG oooam? 5 D IMRUV SST SERIES SH/G VHF/UHF SILICON POWER FETS T O ^ - O Í 10 T 0 120 WATTS, 10MHz-1000MHz MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 415-651-6700 FAX 415-651-2208 lds[A] FEATURES • N-CHANNEL JFET, DEPLETION MODE |
OCR Scan |
10mhz-1000mhzfax415-651-2208 | |
diode u2 40
Abstract: 48 H diode DIODE U2 70 IXSH24N60AU1 IXSN35N120AU1 IXSN35N100U1 IXSX35N120AU1 h 48 diode diode u2 34 ixsn80n60
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OCR Scan |
o-264o-247o-268aaot-227b+15 | |
uhf microwave fet
Abstract: SH100D10LG SH120D10LG SH15A10LG SH25A10LG SH25B10LG SH50B10LG SH75D10LG SH80C10LG
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OCR Scan |
p39-010mhz-1000mhzsh80c10lgsh100d10lg+7 | |
SH25
Abstract: BA10 SH10 SH50
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08-apr-05sh25ba10sh10+1 | |
AD128
Abstract: NE5105 AD256 ad512 amaze ADC82
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OCR Scan |
12-bitpls179ad128ne5105+4 | |
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Contextual Info: SH www.vishay.com Vishay Sfernice Heatsink Encased Wirewound Power Resistors Industrial Applications FEATURES 50 W at + 25 °C High power characteristics RoHS Utilize heatsink capability COMPLIANT Good mechanical protection Industrialized product Material categorization: For definitions of compliance |
Original |
2002/95/ec2011/65/eujs709a02-oct-12 | |