1982B Search Results

EM256Q16T

Contextual Info: NanoAmp Solutions, Inc. 1982B Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM256Q16 EM256Q16 Family 256Kx16bit Ultra-Low Power Asynchronous Static RAM Overview Features The EM256Q16 is an integrated memory device containing a low power 4 Mbit Static Random

N16T1618C2A

Abstract: N16T1625C2A N16T1630C2A 1024Kx16bit
Contextual Info: NanoAmp Solutions, Inc. 1982B Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N16T1630C2 1 A N16T1625C2(1)A N16T1618C2(1)A Advance 1024Kx16bit Ultra-Low Power Asynchronous Static RAM Overview Features The N16T1630C2A, N16T1625C2A

Contextual Info: NanoAmp Solutions, Inc. 1982B Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N08T1630C2 1 A N08T1625C2(1)A N08T1618C2(1)A Advance 512Kx16bit Ultra-Low Power Asynchronous Static RAM Overview Features The N08T16xxC2A, is a family of integrated memory devices containing a low power 8 Mbit SRAM

EM256Q16T

Contextual Info: NanoAmp Solutions, Inc. 1982B Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM256Q16 EM256Q16 Family 256Kx16 bit Ultra-Low Power Asynchronous Static RAM Overview Features The EM256Q16 is an integrated memory device containing a low power 4 Mbit Static Random

1962a

Abstract: lt1196 LTC1196 LTC1196-1AC LTC1196-1BC LTC1196-2AC LTC1198 LTC1198-1AC LTC1198-1BC LTC1198-2AC
Contextual Info: LTC1196/LTC1198 8-Bit, SO-8, 1MSPS ADCs with Auto-Shutdown Options U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High Sampling Rates: 1MHz LTC1196 750kHz (LTC1198) Low Cost SO-8 Plastic Package Single Supply 3V and 5V Specifications

uP 1981A

Abstract: dg1u TMS320C25 schematic
Contextual Info: / T i i n ü N ß _ LTC1196/LTC1198 TECHNOLOGY g-Bit, SO-8, 1MSPS ADCs with Auto-Shutdown Options F6DTURCS DCSCRIPTIOn • High Sampling Rates: 1MHz LTC1196 750kHz(LTC1198) ■ Low Cost ■ SO-8 Plastic Package ■ Single Supply 3V and 5V Specifications

MIL-PRF-5606

Abstract: MIL-PRF-7808 AS81531 skydrol 500-b4 LQ590 RW-2513 SAE-AS81531 TMS-SYSTEM-SIX-RIBBON-A SAE-AS-8243 1982BK04-RIBBON
Contextual Info: TECHNICAL DATA SHEET Document number: TTDS-021 Issue: 3 Date: Nov’ 2008 CM-SCE CABLE MARKER DESCRIPTION: Extruded radiation cross-linked flame retarded polyolefin sheet, formed into punched organized cable markers. USE: Identification of cables and wire bundles by computer-based printing onto markers.

AVR314

Abstract: pwm avr c language AT90S4414 DTMF STK200 pwm Sine wave generation 1982B PWM generator by using microcontroller atmel sine wave pwm circuit AT90S4414 STK500
Contextual Info: AVR314: DTMF Generator 8-bit Microcontroller Features • • • • • • Generation of Sine Waves Using PWM Pulse-Width Modulation Combine Different Sine Waves to DTMF Signal Assembler and C High-level Language Code STK500 Top-Module Design 260 Bytes Code Size/128 Bytes Constants Table Size

mt1198

Abstract: MT119
Contextual Info: i \ m \ LTCl 196/LTC1198 a TECH N O LO G Y 8-Bit, SO-8. 1MSPS AD Cs with Auto-Shutdown Options FCRTURCS DCSCRIPTIOn • High Sampling Rates: 1MHz LTC1196 750kHz(LTC1198) ■ Low Cost ■ SO-8 Plastic Package ■ Single Supply 3V and 5V Specifications ■ Low Power: 10mW at 3V Supply

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published