1930 Search Results

AGR19045XF

Contextual Info: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

Contextual Info: Mouser Electronics Related Product Links 617-19-30-016-0547 - HARTING 19300160547

V674ME03

Contextual Info: V674ME03 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 VOLTAGE CONTROLLED OSCILLATOR Rev A1 PHASE NOISE (1 Hz BW, typical) FEATURES • Frequency Range: 1430 - 1930 • Tuning Voltage: 2-9 Vdc • MINI-14S-L - Style Package MHz

6603 Shenzhen

Abstract: AGR19045E AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor J600 J600 transistor
Contextual Info: Preliminary Data Sheet April 2004 AGR19045E 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19045E is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

Di 762 transistor

Abstract: transistor a015 transistor npn a 1930 wacom connector wacom 33w NPN 13MM PH1920-33
Contextual Info: an AMP company Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz PHI 920-33 v2.01 Features NPN Silicon Microwave Power Transistor Common Emitter Class AB Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metallization System

transistor 7350

Abstract: agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A j496
Contextual Info: Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

MRF6S19060N

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19060N Rev. 0, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19060NR1 MRF6S19060NBR1 Designed for N- CDMA base station applications with frequencies from 1930

LFCN-1800

Contextual Info: Ceramic Low Pass Filter LFCN-1800 Typical Performance Data INSERTION LOSS dB FREQ. (MHz) 50 100 500 1500 1800 1930 2125 2170 2190 2265 2315 2350 2380 2410 2425 2440 2500 2580 2870 2940 3320 4000 4500 5100 5500 6000 6500 7200 7450 8000 8600 9500 10000 11000

Contextual Info: ACPF-8025 Band 25 Rx Filter 1930 – 1995 MHz Product Brief Description Features The Avago ACPF-8025 is a miniature bandpass filter designed for use as a Rx diversity filter in LTE Band 25 applications such as smartphones, tablets, and mobile/ portable communication devices.

MCA-50H

Contextual Info: Frequency Mixer MCA-50H+ Typical Performance Data RF IN (MHz) 330.0 430.0 630.0 830.0 1030.0 1230.0 1430.0 1630.0 1730.0 1930.0 2130.0 2330.0 2530.0 2630.0 2730.0 2830.0 2950.0 3050.0 3170.0 3270.0 3390.0 3490.0 3610.0 3710.0 3830.0 3930.0 4050.0 4150.0

ADE-R18WLH

Contextual Info: Frequency Mixer ADE-R18WLH+ Typical Performance Data RF IN (MHz) 1370.00 1450.00 1530.00 1610.00 1690.00 1770.00 1850.00 1930.00 2010.00 2090.00 2170.00 2250.00 2330.00 2410.00 2490.00 2570.00 2650.00 2730.00 2810.00 2890.00 2970.00 3050.00 3130.00 3210.00

M513

Abstract: MADCSM0001 MADCSM0001SMB MADCSM0001TR
Contextual Info: Dual-Band/Triple-Mode Downconverter 869 - 893 MHz and 1930 - 1990 MHz Functional Block Diagram Features MODE SEL MODE SEL VDD CELL SRC CELL VDD Highly Integrated Downconverter Operates over 2.8 V to 5 V Supply Voltage Dual-Band and Triple-Mode Operation High Linearity, IP3 = 10 dBm typical

Contextual Info: WSDA-00019 PCS Fullband Duplexer Diversity Receive Filter Assembly ◆ Description: The WSDA-00019 is a PCS Fullband duplexer and diversity receive filter assembly consisting of one BTS fullband Rx: 1850-1910 MHz and Tx: 1930-1990 MHz duplexer and one fullband BTS Rx diversity receive (Rx2) filter in a

1920CD60

Abstract: 55SW
Contextual Info: 1920CD60 60 Watts PEP, 25 Volts, Class AB CDMA Personal 1930 - 1990 MHz GENERAL DESCRIPTION CASE OUTLINE The 1920CD60 is a COMMON EMITTER transistor capable of providing 60 Watts of Class AB, RF PEP output power over the band 1930-1990 MHz. This transistor is specifically designed for LINEAR PERSONAL PCS

PL-258

Abstract: PL259 SO-239 UHF JACK amphenol 83-1SP pl-259 UG-646 F 182 CAI 625-24NEF-2B so-239 bulkhead 83-168-RFX
Contextual Info: Amphenol UHF Description UHF - Invented in the 1930’s by an Amphenol engineer, E. Clark Quackenbush, for use in the radio industry. UHF coaxial connectors are general purpose units developed for use in low frequency systems from 0.6 to 300 MHz. UHF is an acronym for “Ultra High Frequency”.

Contextual Info: SR1020 PCS-BAND UPCONVERTER The SR1020 is a broadband PCS-band upconverter iff* ? with integral low phase noise synthesizer. Outline Drawing Specifications Characteristics Guaranteed Frequency* LO IF IF BW SSG Gain Flatness 1930-1945 MHz 2000-2015 MHz 70 MHz

00107

Contextual Info: WSD-00107 PCS Fullband Duplexer ◆ Features: • 40 dB Minimum Isolation • Very Low Insertion Loss - 0.55 dB Maximum • Low Profile, Compact Housing • Ideal for Microcell Requirements ◆ Specifications: Passbands: Receive Transmit 1850-1910 MHz 1930-1990 MHz

Contextual Info: WSD-00050 PCS Fullband Duplexer ◆ Features: • High Isolation - 95 dB Minimum • Low Insertion Loss - 0.6 dB typical • High Return Loss - 20 dB typical ◆ Specifications: Passbands: Receive 1850-1910 MHz Transmit 1930-1990 MHz Passband Insertion Loss:

BCP56

Abstract: LM7805 PTFA190451E PTFA190451F RO4350
Contextual Info: PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz Description The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA,

Contextual Info: VCO Product Specification Model: VCO191-1960U Rev: C Date: 4/17/2003 Customer: SIRENZA MICRODEVICES, INC. Operating Temperature Range: Parameter Frequency Range - Min Typ Max Units X 1930 1960 1990 MHz X 0.5 0.7 -35 ° to 85 ° C Remarks Tuning Voltage:

SMD DIODE gp 817

Abstract: smd resistor philips 1206 smd capacitor philips transistor SMD DK philips ceramic capacitors smd SMD Transistor 6f philips smd 1206 resistor SMD TRANSISTOR L6 philips smd 1206 BEP SMD ZENER
Contextual Info: APPLICATION NOTE 15 W class-AB amplifier with the BLV2044 for 1930 − 1990 MHz PCS AN98022 Philips Semiconductors 15 W class-AB amplifier with the BLV2044 for 1930 − 1990 MHz (PCS) CONTENTS 1 INTRODUCTION 2 CIRCUIT DESCRIPTION 3 DC BIAS CIRCUIT 4 RF MEASUREMENT RESULTS

Contextual Info: O SMD Isolators O CAT-281 Model Number MSI-25S • S p e c i f ico t ions System GSM AMPS MSI-25S*0881M Part Number *' DCS PCS UMTS MSI-25S*0942M MS 1- 2 5 S * 1.842G M S I - 2 5 S « 1.960G MSI-25S*2.140G Frequency 869-894MHZ 925-960MHZ 1805-1880MHz 1930-1990MHz

083-58SP-1002

Abstract: military connectors UHF connector 083-1SPB-15RFX 625-24NEF-2B
Contextual Info: Amphenol RF UHF UHF Connector Series Description Invented in the 1930’s by an Amphenol Engineer named E. Clark Quackenbush, UHF coaxial connectors are general purpose units developed for use in low frequency systems from DC – 300 MHz. Invented for use in the radio industry, UHF is an acronym

MCR50V107M8X11

Abstract: 81c79 A114 A115 AN1955 C101 JESD22 MRF7S19080HR3 MRF7S19080HSR3 CRCW120610R0FKTA
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev. 0, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19080HR3 MRF7S19080HSR3 Designed for CDMA base station applications with frequencies from 1930 to