1900B Search Results

Contextual Info: PULSE SPECIALTY COMPONENTS Low Profile Plug-in Transformers Part Number LP 10-250B23 LP 10-600B1 LP 10-1200B2 LP 10-2400B89 LP 10-4800B90 LP 12-200B24 LP 12-450B3 LP 12-900B4 LP 12-1900B91 LP 12-3800B92 LP 16-150B25 LP 16-350B5 LP 16-700B6 LP 16-1500B93 LP 16-3000B94

MPL-12-12

Abstract: 18650B 34-6B63 2025B LR680
Contextual Info: Series LP and MPL Power Transformers Low Profile Humbucking Plug-in Transformers Part Number LP 10-250B23 LP 10-600B1 LP 10-1200B2 LP 10-2400B89 LP 10-4800B90 LP 12-200B24 LP 12-450B3 LP 12-900B4 LP 12-1900B91 LP 12-3800B92 LP 16-150B25 LP 16-350B5 LP 16-700B6

S1912

Abstract: las19u
Contextual Info: INTEGRATED CIRCU ITS U N IT R O D E 5 AMP POSITIVE VOLTAGE REGULATORS LAS 1900 SERIES FEATURES DESCRIPTION • Guaranteed Power Dissipation 50 Watts fa 80°C Case • Guaranteed input-output differential: - 2.6 Volts • Low noise, band gap reference • Remote sense capability

MGCM02

Abstract: MGCT04 90dB AGC Amplifier VHF oscillator 900mhz Diplexer
Contextual Info: MGCT04 Transmit Circuit for TDMA/AMPS and CDMA/AMPS Preliminary Information Features • • • • • • DS5424 Dual RF Ports for 900MHz and 1900MHz AGC Amplifier with 90dB of Variable Gain, Fully Compensated for Temperature On-chip Active Filter Removes the

LF374

Abstract: 1912B las1905 1905B LM series voltage regulators LAS1915B las19u 1915B LAS-1912 LAS1905B
Contextual Info: A LAMBDA LINEAR REGULATORS LAS 1900 SERIES 5 AMP POSITIVE VOLTAGE REGULATORS ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL FEATURES • Guaranteed Power Dissipation 50 Watts @ 80°C C ase • Guaranteed input-output differential: + 2.6 Volts • Low noise, band gap reference

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: UN IT R O D E C O R P / U N I T R O D E IC M3E D ^ 3 4 0 5 1 ^ DDlSDMfl □ « U N I IN T E G R A T E D C IR C U IT S LAS 1900 U N ITR O D E 5 AMP POSITIVE VOLTAGE REGULATORS T-5S-//-/3 FEATURES DESCRIPTION • Guaranteed Power Dissipation 50 Watts a 80°C C ase

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

1905B

Abstract: 1912B LAS1912 LAMBDA Voltage Regulator LAS19U LAS1905 LAS1912b 19A12 LAS-1912 LAMBDA Voltage Regulator las
Contextual Info: A LAMBDA LINEAR REGULATORS LAS 1900 SERIES 5 AMP POSITIVE VOLTAGE REGULATORS ABSOLUTE MAXIMUM RATINGS PARAMETER FEATURES • G uaranteed Power Dissipation 50 W atts @ 80°C Case • G uaranteed input-output differential: + 2.6 Volts • Low noise, band gap reference

Contextual Info: 3 P L A C E S REV. B DCO 300860 COIL: 25°C CUSTOMER DATA SHEET 320 RESISTANCE NOMINAL ±10% A3 26 VOLTAGE VDC 13.5 MU S T O P E R A T E MU S T OHMS 5.5 RELEASE VDC VDC MAX. MAX. 2.3 VDC Ml ENVIRONMENT: VIBRATION _ 10 Hz - : 30 Hz MS . 9 5 -70 TEMPERATURE

Contextual Info: f • LAS 1900P SERIES I 5 AMP FIXED TNF.AR VQI.TAGK VOT.TAGK ER E G U L A T O R P X _LTNEAR r FEATURES * * * * * * Guaranteed Power Dissipation 50 Watts @ 80 °C case Guaranteed input-output differential: +2.6 Volts Low noise, band-gap reference Sample power cycled burn-in

Contextual Info: FEATURES AND SPECIFICATIONS m o l e x Application Tooling 1 9 2 2 8 -0 0 3 0 Air Crimp Press • Electric/Pneumatic Crimp Press for reel-fed tape mounted terminals and splices ■ Lightweight, small footprint design ■ Crimps 26 AWG - 6 AWG parts ■ Easy change over with interchangeable die sets

GSM repeater circuit

Abstract: gsm repeater PF08134B GSM 900 mhz repeater circuit GSM repeater power amplifier module MOS FET Power Amplifier Module for DCS 1800 vapc DCS1800 DCS1900
Contextual Info: PF08134B MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone REJ03G0075-0100Z Preliminary Rev.1 Sep.04.2003 Application • Triple band amplifier for GSM850 824 MHz to 849 MHz and DCS1800/1900 (1710 MHz to 1785 MHz, 1850 MHz to 1910 MHz).

VHF oscillator

Abstract: saw filter modulator circuit diagram 900mhz Diplexer VHF transistor amplifier circuit
Contextual Info: MGCT04 Transmit Circuit for TDMA/AMPS and CDMA/AMPS Preliminary Information Features • • • • • • DS5424 Dual RF Ports for 900MHz and 1900MHz AGC Amplifier with 90dB of Variable Gain, Fully Compensated for Temperature On-chip Active Filter. Removes the

transistor kt 326

Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816
Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j | R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice

Contextual Info: 19-00B9;Rev0; 11/92 VSHI CMOS, TTL-Com patible A nalog S w itches 1.1 This specification covers the detail requirements for six CMOS switches with three switch configu­ rations SPST, SPDT, and DPST . These circuits are processed in accordance with MIL-STD-883

MGCM02

Abstract: MGCT04 VHF oscillator
Contextual Info: MGCT04 Transmit Circuit for TDMA/AMPS and CDMA/AMPS Preliminary Information Features • • • • • • DS5424 Dual RF Ports for 900MHz and 1900MHz AGC Amplifier with 90dB of Variable Gain, Fully Compensated for Temperature On-chip Active Filter. Removes the

GSM repeater circuit

Abstract: GSM 900 mhz repeater circuit PF08127B GSM repeater DCS1800 DCS1900 pf08127
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: February 1990 Editori 2.0 DATA SHEET FUJITSU MB81256-80 MOS 262,144 BIT DYNAMIC RANDOM ACCESS MEMORY 262,144 Bit Dynamic Random Access Memory The Fujitsu MB81256 is a fully decoded, dynamic NMOS random access memory organized as 262,144 one-bit words. The design is optimized for high speed,

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

PF08127B

Abstract: GSM repeater circuit DCS1800 DCS1900 pf08127
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

VHF oscillator

Abstract: 900mhz Diplexer MGCM02 MGCT04 UHF mixer design
Contextual Info: MGCT04 Transmit Circuit for TDMA/AMPS and CDMA/AMPS Preliminary Information Features • • • • • • DS5424 Dual RF Ports for 900MHz and 1900MHz AGC Amplifier with 90dB of Variable Gain, Fully Compensated for Temperature On-chip Active Filter. Removes the

IP20C

Abstract: MB81C4256-10
Contextual Info: M a rch l99 0 Edition 2 .2 DATA S H E E T FUJITSU MB81C4256-70/-80/-10/-12 CMOS 1,048,576 BIT FAST PAGE MODE DYNAMIC RAM CMOS 256 x 4 Bits Fast Page Mode DRAM The Fujitsu MB81C4256 is a CMOS, fully decoded dynamic RAM organized as 262,144words x 4 bits. The MB81C4256 has been designed for mainframe memories,

ic 81256 ram

Abstract: mb81256 3GJK 66010-2
Contextual Info: February 1990 Edition 2.0 FUJITSU DATASHEET M B 8 1 2 5 6 -8 0 MOS 262,144 BIT DYNAMIC RANDOM ACCESS MEMORY 262,144 Bit Dynamic Random Access Memory The Fujitsu MB81256 is a fully decoded, dynamic NMOS random access memory organized as 262,144 one-bit words. The design is optimized for high speed,