18W TRANSISTOR Search Results
18W TRANSISTOR Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
| TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
| TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
| TTA012 |
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PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini | Datasheet | ||
| TPCP8514 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet |
18W TRANSISTOR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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NPT35015
Abstract: NPT35015D r04350 12061C103KAT2A EAR99 JESD22-A114 JESD22-A115 j146 NPT35015DT
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NPT35015 6000MHz EAR99 NDS-005 NPT35015D r04350 12061C103KAT2A JESD22-A114 JESD22-A115 j146 NPT35015DT | |
18W 12 transistor
Abstract: TDA7481
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TDA7481 TDA7481 Multiwatt15 Multiwatt15 100nF 560pF 470nF 18W 12 transistor | |
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Contextual Info: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power |
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NPT35015 EAR99 NDS-005 | |
COIL58120
Abstract: MULTIWATT15 package tda7481
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TDA7481 Multiwatt15 TDA7481 Multiwatt15 100nF COIL58120 MULTIWATT15 package | |
MULTIWATT15 package
Abstract: MULTIWATT15 TDA7481
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TDA7481 Multiwatt15 TDA7481 Multiwatt15 100nF MULTIWATT15 package | |
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Contextual Info: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power |
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NPT35015 EAR99 NDS-005 | |
MULTIWATT15
Abstract: TDA7481 18W 12 transistor
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TDA7481 Multiwatt15 TDA7481 Multiwatt15 100nF 18W 12 transistor | |
TDA7481Contextual Info: TDA7481 18W MONO CLASS-D AMPLIFIER 18W OUTPUT POWER: RL = 8Ω/4Ω; THD = 10% HIGH EFFICIENCY WIDE SUPPLY VOLTAGE RANGE UP TO ±25V SPLIT SUPPLY OVERVOLTAGE PROTECTION ST-BY AND MUTE FEATURES SHORT CIRCUIT PROTECTION THERMAL OVERLOAD PROTECTION Multiwatt15 |
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TDA7481 Multiwatt15 TDA7481 Multiwatt15 100nF | |
8Q transistor
Abstract: tda7481 COIL77120 MULTIWATT15
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TDA7481 TDA7481 Multiwatt15 Multiwatt15 8Q transistor COIL77120 | |
tda7381 audio amplifier circuit diagramContextual Info: TDA7381 4 x 18W BRIDGE CAR RADIO AMPLIFIER PRODUCT PREVIEW HIGH OUTPUT POWER CAPABILITY: 4 x 25W/4Ω EIAJ 4 x 18W/4Ω @ 14.4V, 1KHz, 10% 4 x 15W/4Ω @ 13.2V, 1KHz, 10% CLIPPING DETECTOR LOW DISTORTION LOW OUTPUT NOISE ST-BY FUNCTION MUTE FUNCTION AUTOMUTE AT MIN. SUPPLY VOLTAGE DETECTION |
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TDA7381 FLEXIWATT25 tda7381 audio amplifier circuit diagram | |
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Contextual Info: 5 7 . SGS-THOMSON TDA7481 ilLKgTOORDI 18W MONO CLASS-D AMPLIFIER • 18W OUTPUT POWER: Rl = 8£2/4£2; THD = 10% ■ HIGH EFFICIENCY ■ WIDE SUPPLY VOLTAGE RANGE UP TO ±25V ■ SPLIT SUPPLY ■ OVERVOLTAGE PROTECTION ■ ST-BY AND MUTE FEATURES ■ SHORT CIRCUIT PROTECTION |
OCR Scan |
TDA7481 Multiwatt15 TDA7481 Multiwatt15 | |
MA6520
Abstract: inductive proximity detector ic
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TDA7381 x25W/4 FLEXIWATT25 MA6520 inductive proximity detector ic | |
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Contextual Info: SGS-THOMSON TDA7481 5 7 . KfflD g[Si llLi(gra©lii!lD(gi 18W MONO CLASS-D AMPLIFIER PR O D U C T PREVIEW 18W OUTPUT POWER: RL = 8i2; THD = 10% HIGH EFFICIENCY WIDE SUPPLY VOLTAGE RANGE (UP TO ±25V SPLIT SUPPLY OVERVOLTAGE PROTECTION ST-BY AND MUTE FEATURES |
OCR Scan |
TDA7481 att15 TDA7481 Multiwatt15 100nF 10OnF | |
TDA7381
Abstract: TDA7385 tda7381 audio amplifier circuit diagram FLEXIWATT25
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TDA7381 FLEXIWATT25 TDA7381 TDA7385 tda7381 audio amplifier circuit diagram FLEXIWATT25 | |
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Contextual Info: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features |
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T2G6001528-Q3 T2G6001528-Q3 TQGaN25 | |
18w transistorContextual Info: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features |
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T2G6001528-Q3 T2G6001528-Q3 TQGaN25 18w transistor | |
S2-1111Contextual Info: PD57018-E PD57018S-E RF POWER transistor, LdmoST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 18W with 16.5dB gain @ 945MHz /28V ■ New RF plastic package |
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PD57018-E PD57018S-E 945MHz PowerSO-10RF PD57018 PowerSO-10RF. S2-1111 | |
2SC2782A
Abstract: 2SC2782 NPN 2SC2782 transistor 2sc2782
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2SC2782A 175MHz, 2SC2782A 2SC2782 NPN 2SC2782 transistor 2sc2782 | |
33PFX4
Abstract: 2SC2782 NPN 2SC2782 transistor 2sc2782 18W 12 transistor 1BW TRANSISTOR 10ID 10A ferrite bead 132pF 156pF
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2SC2782 175MHz, 2-13C1A 961001EAA2' 33PFX4 2SC2782 NPN 2SC2782 transistor 2sc2782 18W 12 transistor 1BW TRANSISTOR 10ID 10A ferrite bead 132pF 156pF | |
NPN 2SC2782
Abstract: transistor 2sc2782 2SC2782
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2SC2782 175MHz, 2-13C1A 000707EAA1 175MHz NPN 2SC2782 transistor 2sc2782 2SC2782 | |
S2-1111Contextual Info: PD57018-E PD57018S-E RF POWER transistor, LdmoST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 18W with 16.5dB gain @ 945MHz /28V ■ New RF plastic package |
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PD57018-E PD57018S-E 945MHz PowerSO-10RF PD57018 PowerSO-10RF. S2-1111 | |
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Contextual Info: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features |
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T2G6001528-Q3 T2G6001528-Q3 TQGaN25 | |
NPN 2SC2782
Abstract: transistor 2sc2782
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2SC2782A 175MHz, 2-13C1A 2SC2782 NPN 2SC2782 transistor 2sc2782 | |
NPN 2SC2782Contextual Info: 2SC2782A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782A VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm z Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage |
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2SC2782A 175MHz, 2-13C1A 2SC2782 NPN 2SC2782 | |