1829-1 TRANSISTOR Search Results

MAX1452EVKIT-NS

Contextual Info: 19-1829; Rev 1; 6/01 KIT ATION EVALU E L B A AVAIL Low-Cost Precision Sensor Signal Conditioner The MAX1452 architecture includes a programmable sensor excitation, a 16-step programmable-gain amplifier PGA , a 768-byte (6144 bits) internal EEPROM, four 16-bit DACs, an uncommitted op amp, and an onchip temperature sensor. In addition to offset and span

motorola op amp with input resistance of 1.67

Abstract: resistive Humidity Sensor MAX1452 MAX1452AAE MAX1452CAE MAX1452EAE
Contextual Info: 19-1829; Rev 1; 6/01 KIT ATION EVALU E L B A AVAIL Low-Cost Precision Sensor Signal Conditioner The MAX1452 architecture includes a programmable sensor excitation, a 16-step programmable-gain amplifier PGA , a 768-byte (6144 bits) internal EEPROM, four 16-bit DACs, an uncommitted op amp, and an onchip temperature sensor. In addition to offset and span

Contextual Info: 19-1829; Rev 1; 6/01 KIT ATION EVALU E L B A AVAIL Low-Cost Precision Sensor Signal Conditioner The MAX1452 architecture includes a programmable sensor excitation, a 16-step programmable-gain amplifier PGA , a 768-byte (6144 bits) internal EEPROM, four 16-bit DACs, an uncommitted op amp, and an onchip temperature sensor. In addition to offset and span

Contextual Info: i, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLV21 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLV21 is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYL E

BLW76

Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 BLW76 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLW76 is Designed for use in class-AB orclass-B operated high power transmitters in the H.F. and

Contextual Info: SIEMENS • Ö235b05 D0TDflb3 OTfl PNP Silicon Transistors for High Voltages SMBTA 92 SMBTA 93 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 42, SMBTA 43 NPN Type Marking Ordering Code (tape and reel)

bta 92

Abstract: BTA43 smbta93 93 MARKING CODE NPN S2e bta 05
Contextual Info: SIEMENS PNP Silicon Transistors for High Voltages SM BTA 92 SM BTA 93 • High breakdown voltage • Low coflector-emitter saturation voltage • Complementary types: S M B TA 42, SM BTA 43 NPN Type Marking Ordering Code (tape and reel) Pin (Contigui ation

UF2840G

Abstract: transistor C 245 b
Contextual Info: P i com pany RF MOSFET Power Transistor, 40W, 28V 100-500 MHZ UF2840G - A - B » Features f— H— j • N -Channel E n h an cem en t M ode D evice I I • DM OS Structure • Low er C ap acitan ces for B roadb an d O p eratio n

Contextual Info: • bbS3T31 00BSfl57 bQ5 H A P X N AMER PHILIPS/DISCRETE PMBT2907 PMBT2907A L.7E D _ J SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon transistors, in a microminiature plastic envelope, intended for medium power switching and general purpose amplifier applications in thick and thin-film circuits.

t 1829

Abstract: buzer F14E E0C63158 E0C63256 E0C63358 S1C63557
Contextual Info: MF1106-03 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C63557 Technical Manual S1C63557 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any

buzer

Abstract: E0C63158 E0C63256 E0C63358 S1C63557
Contextual Info: MF1106-03 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C63557 Technical Manual S1C63557 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any

Contextual Info: MF1106-02 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C63557 Technical Manual S1C63557 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any

L7E transistor

Abstract: PMBT2907A PMBT2907 1N916
Contextual Info: • 1^53^31 002SÖS7 bD5 H A P X N AUER PHILIPS/DISCRETE PMBT2907 PMBT2907A L.7E D SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon transistors, in a microminiature plastic envelope, intended for medium power switching and general purpose amplifier applications in thick and thin-film circuits.

diode sg 87

Abstract: P302T SGSP101 GS3J P302 SGSP sgsp302 p102 capacitance SG 21 SP301
Contextual Info: S G S -T H O M S O N 73C D7E 17 282 | 7 ‘i 2 c] 2 3 ? 00177Ö 5 D Q | y . 0 7 iX V '' SGSP101/P102 * S ^ > SGSP201/P202 N-CHANNEL POWER MOS TRANSISTORS ’ sgsp 301/P30Z HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHX6ND50E FREDFET, Avalanche energy rated_ FEATURES • • • • • • SYMBOL QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching Stable off-state characteristics

Contextual Info: ADP1821 Reference Design FCDC00093 Preliminary Technical Data FEATURES Single Output Voltage: 5.0 V Output Current: 1.4 A Input voltage: 9 V to 20 V Ripple <1% ppk of Output Voltage Transient step ±5%, 50% max load ADP1821 REFERENCE DESIGN DESCRIPTION This ADP1821 Reference Design uses a 9 to 20 V input voltage to generate a 5.0 V output voltage VOUT1 with a maximum

2160 transistor

Abstract: GSP7427 GSP7427-89 RO4003 C 2120 Y unmatched bare amplifier W-335 L381
Contextual Info: GSP7427-89 InGaP HBT Medium Power Amplifier Product Features Product Description ● 0. 1 to 6GHz Frequency Range The GSP7427-89 is an unmatched General Purpose Medium Power Amplifier that covers the 100MHz to 6GHz frequency range with 16 dB nominal matched gain at 2GHz. It also has superior Third Order

zener diode 7c3

Abstract: electrolytic capacitor 470 Nippon capacitors MRF255 equivalent
Contextual Info: MOTOROLA O rder th is docum ent by MRF255/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Power Field-Efffect Transistor N-Channel Enhancement-Mode 55 W, 12.5 Vdc, 54 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies

Motorola AN-546

Abstract: MRF460 an-546 motorola AN282A motorola application note AN-546 AN546 2N6368 2648A str 2652 motorola an-282a application
Contextual Info: 1EE D I b3b 72 54 00fl7fc.?fc> M | MOTOROLA SC MOTOROLA r'33-/r X STR S/R SEM ICO NDUCTOR TECHNICAL DATA MRF460 T h e R F L in e 40 W PEP - 3 0 MHz 2 RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed primarily for applications as a high-power linear ampli­

Contextual Info: SIEMENS Si-M M IC-Am plifier BGA 425 in SIEGET 25-Technologie Preliminary data • Multifunctional ease. 50 Cl block LNA / MIX • Unconditionally stable • Gain IS2-|I2 = 18.5 dB at 1.8 GHz (appl.1) gain IS21I2 = 22 dB at 1.8 GHz (appl.2) /p3out = +7 dBm at 1 8 GHz ( ^D=3V,/D=9.5mA)

MMG3006NT1

Abstract: ECUV1H150JCV FR408 1008CS-150XJB AN1955 C0603C103J5RAC erj8geyj101 z667 CRCW06030000FKEA AVX Manufacture Label
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3006NT1 Rev. 3, 5/2010 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3006NT1 Broadband High Linearity Amplifier The MMG3006NT1 is a General Purpose Amplifier that is internally input prematched and designed for a broad range of Class A,

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3006NT1 Rev. 4, 1/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3006NT1 Broadband High Linearity Amplifier The MMG3006NT1 is a General Purpose Amplifier that is internally input prematched and designed for a broad range of Class A,

MMG3006NT1

Abstract: AVX Manufacture Label ECUV1H150JCV
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3006NT1 Rev. 4, 1/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3006NT1 Broadband High Linearity Amplifier The MMG3006NT1 is a General Purpose Amplifier that is internally input prematched and designed for a broad range of Class A,

Contextual Info: S G S-THOMSON Q7C D | 7 ^ ^ 2 3 7 u u s/m u s IN T E G R A T E D f f f f B e fv CIRCUIT QD14fleia fl I h c c /h c f « •• . 7929225 S G S : ^ ic S E M IC O N D U C T O R 0 8 9 0 6 i b ] j d T - V 3 '2 ^ / CORP EXPANDABLE 4-WIDE 2-INPUT A N D-O R-IN VERT GATE