180NS Search Results

HCF4585B

Abstract: HCF4585BEY HCF4585BM1 HCF4585M013TR HCF4585BE
Contextual Info: HCF4585B 4-BIT MAGNITUDE COMPARATOR • ■ ■ ■ ■ ■ ■ ■ EXPANSION TO 8, 12, 16.4 N BITS BY CASCADING UNIT MEDIUM SPEED OPERATION : COMPARES TWO 4-BIT WORDS IN 180ns Typ. at 10V STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO

HCF4585B

Contextual Info: r z 7 S C S -T H O M S O N Ä T# RiilDœ IILICTI^©MœS H C C /H C F 4 5 8 5 B 4-BIT MAGNITUDE COMPARATOR . EXPANSION TO 8,12,16. 4 N BITS BY CAS­ CADING UNITS . MEDIUM-SPEED OPERATION : COMPARES TWO 4-BIT WORDS IN 180ns typ. AT 10V . STANDARDIZED SYMMETRICAL OUTPUT

APT12F60K

Abstract: MIC4452
Contextual Info: APT12F60K 600V, 12A, 0.62Ω MAX,<180nS N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

CMP-01

Abstract: CMP01EZ CMP01CP CMP01CJ CMP-01E CMP01EP cmp01 cmp01c CMP01Z CMP01EJ
Contextual Info: ANALOG DEVICES Fast Precision Comparator CMP-01 FEATURES • Fast Response Time . 180ns Max • High Input Slew R a te . 92V/fts • Low Offset Voltage. 0.3mV Typical, 0.8mV Max

lt352

Abstract: LT3526
Contextual Info: LT1336 Half-Bridge N-Channel Power MOSFET Driver with Boost Regulator FEATURES n n n n n n n n n n DESCRIPTION Floating Top Driver Switches Up to 60V Internal Boost Regulator for DC Operation 180ns Transition Times Driving 10,000pF Adaptive Nonoverlapping Gate Drives Prevent

Contextual Info: CMOS VIDEO RAM KM424C64 6 4 K X 4 Bit CMOS VIDEO RAM FEATURES GENERAL DESCRIPTION • Dual Port Architecture 64K x 4 bits RAM port 256 x 4 bits SAM port • Performance range: -1 0 item RAM access tim e tRAc -1 2 120ns 100ns 25ns 30ns 180ns 220ns RAM Page mode cycle (tPC)

2SK126

Abstract: 2SK1266
Contextual Info: Pow er F-MOS FET 2SK1266 2SK1266 Silicon N-channel Power F-MOS FET • Features • • • • ■ Package Dimensions Low ON resistance RDs on : R DS (on) 1 = 0 .080 (typ.) High switching rate : tf= 180ns (typ.) No secondary breakdown For low voltage driving ( V g s = 4V)

Contextual Info: CD4585BMS Semiconductor CMOS 4-Bit Magnitude Comparator December 1992 Features Pinout • High Voltage Type 20V Rating CD4585BM S TOP VIEW • Expansion to 8 ,1 2 ,1 6 . . ,4N Bits by Cascading Units • Medium Speed Operation - Com pares Two 4-Bit Words in 180ns (Typ.) at 10V

km41c1001

Contextual Info: SAMSUNG SEMICONDUCTOR INC S3E D • 7Tbm42 KM41C1001A CMOS DRAM T '4 -6 '5 1 3 - 1 M x 1 Bit Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: tcAc tnc 70ns 20ns 130ns KM41C1001A- 8 80ns 20ns 150ns KM41C1001A-10 100ns 25ns 180ns

2764A datasheet

Abstract: EPROM 2764a FZJ 105 2764A1 2764A-20 DIP-28 ST2764AP Z8000 ST2764A20CP ST2764A-18CP
Contextual Info: r= J S G S -T H O M S O N *7Æ U M [f3 [iŒ©ïï® QM(gs ST2764AP 64K (8Kx 8 NMOS ONE TIME PROGRAMMABLE ROM • FAST ACCESS TIME: 180ns ■ O to + 7 0 °C STANDARD TEMPERATURE RANGE ■ SIJMGLE + 5 V POWER SUPPLY ■ ± 10% VCc TOLERANCE AVAILABLE ■ LOW STANDBY CURRENT (35mA MAX)

Contextual Info: APT12F60K 600V, 12A, 0.62Ω MAX,<180nS N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

buw13a philips semiconductor

Abstract: BUT22A BUT228 BUP23A SOT93 BUT18 PHILIPS SEMICONDUCTOR mje13008 SOT-93 bus13 philips transistor VCE 1000V
Contextual Info: BSE J> N AUER PHILIPS/DISCRETE • bbS3T31 001bE21 Ö ■ Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. TYPE NO. PACKAGE OUTLINE •cfDOt1) 6A v CE(*at) MAX. at lc/lB t ft y p a tlc (Inductive load) 400V 450V 1.5V at 4A/0.8A 180ns at 4A 850V 1000V

S4M1

Abstract: EPROM 2764a 2764A-20 DIP-28 ST2764AP Z8000 ST2764A-20CP ST2764A
Contextual Info: “ JÆ. SGS-THOMSON ST2764AP ISOÊIB lllLI ffWHOëi 64K 8K x 8 NMOS ONE TIME PROGRAMMABLE ROM • FAST ACCESS TIME: 180ns ■ O to + 7 0 °C STANDARD TEMPERATURE RANGE ■ SINGLE + 5 V POWER SUPPLY ■ ± 1 0 % VCc TOLERANCE AVAILABLE ■ LOW STANDBY CURRENT (35mA MAX)

1N914

Abstract: M2764A M27C64A
Contextual Info: M2764A NMOS 64 Kbit 8Kb x 8 UV EPROM NOT FOR NEW DESIGN FAST ACCESS TIME: 180ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 35mA max TTL COMPATIBLE DURING READ and PROGRAM FAST PROGRAMMING ALGORITHM 28 ELECTRONIC SIGNATURE 1

Contextual Info: 5 7 . SG S-TH O M SO N M2764A •LI NMOS 64K 8K x 8 UV EPROM FAST ACCESS TIME: 180ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 35mA max TIL COMPATIBLE DURING READ and PROGRAM FAST PROGRAMMING ALGORITHM ELECTRONIC SIGNATURE

2SK1266

Contextual Info: 2SK1266 Power F-MOS FETs 2SK1266 Silicon N-Channel Power F-MOS Unit : mm ON-resistance RDS on : R DS(on)1= 0.08Ω(typ) 2.7±0.2 switching : tf=180ns(typ) secondary breakdown ● Low-voltage 16.7±0.3 ● No 5.5±0.2 drive 4.2±0.2 ● High-speed 4.2±0.2

HM-6518B-9

Abstract: AN 6518 HM-6518 HM-6518-9 a4712 6518b
Contextual Info: HM-6518 TM 1024 x 1 CMOS RAM March 1997 Features Description • • • • • • • Low Power Standby. . . . . . . . . . . . . . . . . . . . 50µW Max Low Power Operation . . . . . . . . . . . . . .20mW/MHz Max Fast Access Time . . . . . . . . . . . . . . . . . . . . . 180ns Max

Contextual Info: ¿ T T SGS-THOMSON M2764A NMOS 64K 8K x 8 UV EPROM • FAST ACCESS TIM E: 180ns ■ EXTENDED TEM PERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 35m A max ■ TTL COMPATIBLE DURING READ AND PROGRAM ■ FAST PROGRAMM ING ALGORITHM ■ ELECTRONIC SIGNATURE

45W2

Abstract: 2SK1033
Contextual Info: P ow er F-MOS FET 2SK1033 2SK1033 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low O N re s is ta n c e R DS on : RDS (on) = 0 .0 4 5 ft (ty p .) Unit: mm • H igh sw itch in g r a te : tf = 180ns (ty p .) • N o se c o n d a ry b reak d o w n

CMP-01

Abstract: CMP01CP CMP01CJ CMP-01CJ cmp01c CMP-01C
Contextual Info: ANALOG DEVICES Fast Precision Comparator CMP-01 GENERAL DESCRIPTION FEATURES • • • • • • • • • • • • Fast Response Time . 180nsMax High Input Slew R a te .92V/^s

2SK1266

Contextual Info: P o w e r F -M O S F E T 2SK1266 2SK1266 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistance Ri„ on : K|,.» (on) 1 = 0 . 0 8 0 (typ.) Unit mm • High switching rate : t , - 180ns (typ.) • No secondary breakdown • For low voltage driving ( V « = 4V)

KM44C256AP

Abstract: KM44C256AJ samsung hv capacitor KM44C256A-8 KM44C256A-10 KM44C256A KM44C256A-12
Contextual Info: SAMSUNG SEMICONDUCTOR INC E3E D 7=^4145 OOQfilbO 7 KM44C256A CMOS DRAM 2 5 6 K x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tfUC KM44C256A- 8 80ns tcAc 20ns tRC 150ns KM44C256A-10 100ns 25ns 180ns KM44C256A-12

LA 6508

Abstract: 6508 RAM 6508-9 ram HM-6508-9 harris 6508
Contextual Info: $ H " » H M - 6 1 0 2 4 x 1 February 1992 5 8 C M O S RAM Features Description • Low Power Max. • Low Power O peration.20mW/MHz Max. • Fast Access Max.

CEER117

Contextual Info: Datasheet 1ch Gate Driver Providing Galvanic Isolation 2500Vrms Isolation Voltage BM60051FV-C General Description Key Specifications The BM60051FV-C is a gate driver with an isolation voltage of 2500Vrms, I/O delay time of 260ns, minimum input pulse width of 180ns, and incorporates the fault