18 PIN STATIC RAM Search Results

Contextual Info: «O V i C 1992 MEC il PD431018 65,536 x 18-Bit Static CMOS RAM NEC Electronics Inc. Preliminary Information October 1992 Description Pin Configurations The /1/PD431018 is a 65,536-word by 18-bit static RAM fabricated with advanced silicon-gate technology,

Contextual Info: SE C NEC Electronics Inc. fiPD431018 65,536 X 18-Bit Static CMOS RAM Description Pin Configurations The ¿¿PD431018 is a 65,536-word by 18-bit static RAM fabricated with advanced silicon-gate technology, unique CMOS peripheral circuits, and N-channel mem­

NEC B 536

Abstract: uPD431018 lae42 Ic blz
Contextual Info: NEC ffPD431018 65,536 X 18-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The /JPD431018 is a 65,536-word by 18-bit static RAM fabricated with advanced silicon-gate technology, unique CMOS peripheral circuits, and N-channel mem­ ory cells. It is suitable for cache memory and buffer

uPD431018

Abstract: uPD431018LE-15 UPD431018LE IC 8821 uPD431018L nec 44pin 1993
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431018 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 18-BIT Description The µPD431018 is a high speed, low power, 1 179 648 bits 65 536 words by 18 bits CMOS static RAM. The µPD431018 are packed in 44-pin plastic SOJ. Feature

118-TP

Contextual Info: MITSUBISHI LS Is , M5M5V1B118TP,RT-8,-10,-12 1179648-BIT 65536-WORD BY 18-BIT BiCMOS SYNCHRONOUS STATIC RAM DESCRIPTION The M 5 M 5V 1B 118 is a fam ily o f 6 5 536-w ord by 18-bit synchronous static R A M s, fabricated w ith the PIN CONFIGURATION (TOP VIEW)

HM62A168

Abstract: 8d15 62A168
Contextual Info: HM62A168/HM62A188 Series Prelim inary • PIN-OUT Direct M apped 8,192-Word x 16/18-Bit 2-Way 4,096-W ord x 16/18-Bit Static Cache RAM ■ DESCRIPTION T h e Hitachi H M 62 A 168 /H M 62A 1 88 is a high speed 128/144-kbit static cache RAM organized as 2-way set associative 4k x 16/18 or

4804B

Abstract: 4804 4804BCC semi 4804 4804a c 4804a TCO 706 1N3064 EMM Semi
Contextual Info: GENERAL DESCRIPTION FEATURES • Single +5V Power Supply ■ 1Kx4 Organization ■ Replaces 41024x1 Static RAMs ■ Completely Static—No Clocks or Refresh ■ 18 Pin Package ■ Access/Cycle Times As Low As 400 nsec max ■ 250 mw Typical Operating Power

M2114A

Abstract: M2148H 1kx4 n irc 1028
Contextual Info: intei M2148H HIGH SPEED 1024 x 4 BIT STATIC RAM MILITARY M2148H 70 Max. Access Time ns 180 Max. Active Current (mA) 30 Max. Standby Current (mA) HMOS E Technology High Density 18-Pin Package Completely Static Memory- •No Clock or Timing Strobe Required

Contextual Info: MITSUBISHI LS Is t jw ^ M 5 M 5 V 1 B 0 1 8 J ,T P ,R T - 1 0 ,-1 2 ,-1 5 1179648-BIT 65536-WORD BY 18-BIT BICMOS STATIC RAM DESCRIPTION The M5M5V1B018 is a family of 65536-word by 18-bit PIN CONFIGURATION (TOP VIEW) static RAMs, fabricated with the high performance BiCMOS

IC 4804

Contextual Info: FEATURES • Single +5V Power Supply ■ 1Kx4 Organization ■ Replaces 41024x1 Static RAMs ■ Completely Static—No Clocks or Refresh ■ 18 Pin Package ■ Access/Cycle Times As Low As 400 nsec max ■ 250 mw Typical Operating Power ■ Common I/O Bus

M2147

Abstract: intel 2147
Contextual Info: in te i M2147 4096 X 1 BIT STATIC RAM M2147 Max. Access Time ns 85 180 Max. Active Current (mA) Max. Standby Current (mA) 30 HMOS Technology Automatic Power-Down Completely Static Memory — No Clock or Timing Strobe Required High Density 18-Pin Package

Contextual Info: PRELIMINARY INFORMATION CMOS 64K x 18 Static RAM FEATURES • Fast Access Times: 20/25/30/35 ns • Space Saving 52-Pin PLCC • JEDEC Standard Pinout • Wide Word 18-Bits for: - Improved Performance - Reduced Component Count - Nine-bit Byte for Parity

Contextual Info: ADVANCE M IC R O N M T 5 6C 0 41 6 DUAL 4Kx 16/18 SRAM, SINGLE 8Kx 16/18 CACHE DATA STATIC RAMS CONFIGURABLE CACHE DATA RAM FEATURES PIN ASSIGNMENT Top View • Operates as two 4K x 16/18 SRAMs with common addresses, common data and separate control signals.

Contextual Info: SONY High Speed Bi-CMOS Synchronous Static RAM Preliminary Description The CXK77B181OAGB-5/6 is a high speed 1M bit 119 pin BGA Plastic Bi-CMOS synchronous static RAM organized as 65536 words by 18 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a

5114 ram

Abstract: 5114 intel 2114a 2114a
Contextual Info: 5114 1024 x 4 BIT STATIC CM O S RAM • Fully Static Operation; No Clocks, Strobes or Latches ■ Data Retention at 2.0V ■ Identical Cycle and Access Times ■ High Performance; 150 ris Access Time ■ TTL Compatible Inputs and Outputs ■ Hi9 h Dens'ty 18-Pin Package

M2114A

Abstract: M2148H
Contextual Info: in t e i M2148H HIGH SPEED 1024 x 4 BIT STATIC RAM M ilitary M2148H-3 M2148H Max. Access Time ns 55 70 Max. Active Current (mA) 180 180 Max. Standby Current (mA) 30 30 HMOS III Technology High Density 18-Pin Package Completely Static Memory — No Clock

Contextual Info: 3ÔE D MICRON TECHNOLOGY INC blllSM'l QGQ3G2Q 1 • MRN r - % - n - ìz aìa r CACHE DATA STATIC RAM DUAL 4Kx 18 SRAM, SINGLE 8Kx 18 SRAM CONFIGURABLE CACHE DATA SRAM FEATURES PIN ASSIG N M EN T Top View • Automatic WRITE cycle completion • Operates as two 4K x 18 SRAMs with common

MK2147-70

Abstract: MK2147-55 vs5-24v MK2147 MK2147-85
Contextual Info: MOSTEK 4K x 1 -BIT STATIC RAM M K 2147 J -55/70/85 FEATURES □ Address Activated static m em ory— no clock or tim in g strobe required □ Sicaled Poly 5™ technology □ Industry standard 18-pin dip configuration □ Access tim e equal cycle tim e

Contextual Info: intei M2148H HIGH SPEED 1024 x 4 BIT STATIC RAM Military M2148H-3 M2148H Max. Access Time ns 55 70 Max. Active Current (mA) 180 180 Max. Standby Current (mA) 30 30 H M O S III Technology High Density 18-Pin Package Completely Static Memory — No Clock or Timing Strobe Required

5104

Abstract: N5104 2141 ram 2141 intel 5104 dm
Contextual Info: A[WM1 I 0MF© GM¥0®M intéf 5104 4096 x 1 BIT STATIC CMOS RAM • Data Retention at 2.0V Fully Static Operation; No Clocks, Strobes or Latches High Performance; 150 ns Access Time ■ Identical Cycle and Access Times TTL Compatible Inputs and Outputs ■ High Density 18-Pin Package

Contextual Info: Emm semi FEA TU R E S • Single +5V Power Supply ■ 4Kx1 Organization ■ Replaces 41024x1 Static RAMs ■ Completely Static—No Clocks or Refresh ■ 18 Pin Package ■ Access/Cycle Times As Low As 400 nsec max ■ 250 mw Typical Operating Power ■ Separate Data In and Data Out

4108 RAM

Contextual Info: LH52256AS FEATURES CMOS 256K 32K x 8 Static RAM PIN CONNECTIONS • 32,768 × 8 bit organization • Access time: 500 ns (MAX.) 28-PIN SOP • Supply current: Operating: 36 mW (MAX.) 18 mW (tRC, tWC = 1 µs (TYP.) Standby: 72 µW (MAX.) TOP VIEW A14 1

4804B

Abstract: TCO 706 EMM Semi 4804 C 4804 c 4804a 4804 B 1N3064 4096 bit static RAM 4804BCC
Contextual Info: L - j L . m mm liiiis ii ‘« t e w s GENERAL DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Single +5 V Power Supply 1 Kx4 Organization Replaces 41024x1 Static RAMs Com pletely Static—No Clocks or Refresh 18 Pin Package A ccess/C ycle Times As Low As 400 nsec max

Contextual Info: 1K Commercial X2212A Jtor 2 5 6 x 4 Bit Nonvolatile Static RAM FEATURES • Single 5V Supply • Fully TTL Compatible • JEDEC Standard 18-Pin Package • Infinite E2PROM Array Recall, RAM Read and Write Cycles