17MAY06 Search Results

316836-1

Abstract: Tyco 316836-1
Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS D IST J LTR 01 DESCRIPTION REVISED DATE E C R — 0 6 — 001254- 17MAY06 DWN APVD MS KB D D 01.5 0.7 2.3REF -01.18 SECT. B - B

FJ 3528

Abstract: JIS C3406 wire spec JIS-C-3406 JIS D1601 vibration Testing Method for Automobile JASO d 605 D0203 D0204 D1601 D605 D7101
Contextual Info: tifca Product Specification 108-5668 Electronics 17MAY06 Rev. H5 025 S E R IE S I/O C O N N E C T O R S H -T y p e V -T y p e 2 R o w tW ire t o W ire 1. Scope: 1.1 C o n te n ts T h is s p e c ific a tio n c o v e rs th e re q u ire m e n ts fo r p ro d u c t p e rfo rm a n ce , t e s t m e th o d s and q u a lity a s s u ra n c e p ro v is io n s o f

Contextual Info: 4 TH IS DRAWING IS U N P U B LIS H E D . RELEASED FOR PUBLICATION A L L RIGHTS COPYRIGHT 2 3 - LOC REVISIONS D IST GP 00 RESERVED. BY TYCO ELECTRONICS CORPORATION. LTR D E SC RIPTIO N B R E V IS E D PER DATE DWN JDP CR 17MAY06 E C O -0 6 -0 0 7 6 3 8 APVD

67-21B EVERLIGHT

Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet TOP View LEDs 67-21B SUBC/S400-XX/TR8 Features ․P-LCC-2 package. ․White package. ․Optical indicator. ․Colorless clear window. ․Wide viewing angle. ․Suitable for vapor-phase reflow, Infrared reflow

Contextual Info: BAT54WS Vishay Semiconductors Small Signal Schottky Diode Features • These diodes feature very low turn-on voltage and fast switching e3 • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges

Contextual Info: MUR140 & MUR160 New Product Vishay General Semiconductor Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency

GDZ12B-V

Abstract: GDZ3V9B-V GDZ10B-V GDZ11B-V GDZ13B-V GDZ15B-V GDZ16B-V GDZ18B-V
Contextual Info: GDZ-V-Series Vishay Semiconductors Small Signal Zener Diodes Features • Silicon Planar Power Zener Diodes • Low Zener impedence and low leakage e3 current • Popular in Asian designs • Compact surface mount device • Ideal for automated mounting • Lead Pb -free component

Contextual Info: 24 23 21 22 20 19 17 IB 16 15 14 13 11 12 35 10 7 8 SYMBOL DEFINITION A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON THE INDIVIDUAL COMPONENT DRAWING. QD M MISSING SYMBOLS TOTAL NO OF INSPECTIONS REQUI RED

EX39

Abstract: KX15 URM43
Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. MAY ,2006- LOC ALL RIGHTS RESERVED. E DIST R E V IS IO N S B LTR C NOTES: /\ PACK IN ACCORDANCE WITH AMP SPEC 107- 3275 /K 100 TRAY PACK IN ACCORDANCE WITH AMP SPEC 107- 3275

ISC-1812

Contextual Info: ISC-1812 Vishay Dale Surface Mount, Molded, Shielded Inductors FEATURES STANDARD ELECTRICAL SPECIFICATIONS IND. µH 0.10 0.12 0.15 0.18 0.22 0.27 0.33 0.39 0.47 0.56 0.68 0.82 1.0 1.2 1.5 1.8 2.2 2.7 3.3 3.9 4.7 5.6 6.8 8.2 10.0 12.0 15.0 18.0 22.0 27.0

ISC-1812

Contextual Info: ISC-1812 Vishay Dale Surface Mount, Molded, Shielded Inductors FEATURES STANDARD ELECTRICAL SPECIFICATIONS IND. µH 0.10 0.12 0.15 0.18 0.22 0.27 0.33 0.39 0.47 0.56 0.68 0.82 1.0 1.2 1.5 1.8 2.2 2.7 3.3 3.9 4.7 5.6 6.8 8.2 10.0 12.0 15.0 18.0 22.0 27.0

ISC-1812

Contextual Info: ISC-1812 Vishay Dale Surface Mount, Molded, Shielded Inductors FEATURES STANDARD ELECTRICAL SPECIFICATIONS IND. µH 0.10 0.12 0.15 0.18 0.22 0.27 0.33 0.39 0.47 0.56 0.68 0.82 1.0 1.2 1.5 1.8 2.2 2.7 3.3 3.9 4.7 5.6 6.8 8.2 10.0 12.0 15.0 18.0 22.0 27.0

67-21B EVERLIGHT

Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet TOP View LEDs Preliminary 67-21B SUBC/S400-XX/TR8 Features ․P-LCC-2 package. ․White package. ․Optical indicator. ․Colorless clear window. ․Wide viewing angle. ․Suitable for vapor-phase reflow, Infrared reflow

GSD2004WS-GS08

Abstract: GSD2004WS-GS18 GSD2004WS-V
Contextual Info: GSD2004WS-V Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • Silicon Epitaxial Planar Diode • Fast switching diode,especially suited for e3 applications requiring high voltage capability • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC

ISC-1210

Contextual Info: ISC-1210 Vishay Dale Surface Mount, Molded, Shielded Inductor FEATURES • Molded construction provides superior strength and moisture resistance • Tape and reel packaging for automatic handling, RoHS 2000/reel, EIA 481 • Compatible with vapor phase, infrared and wave COMPLIANT

GDZ10B-V

Abstract: GDZ3V9B-V GDZ18B-V GDZ11B-V GDZ12B-V GDZ13B-V GDZ15B-V GDZ16B-V
Contextual Info: GDZ-V-Series Vishay Semiconductors Small Signal Zener Diodes Features • Silicon Planar Power Zener Diodes • Low Zener impedence and low leakage e3 current • Popular in Asian designs • Compact surface mount device • Ideal for automated mounting • Lead Pb -free component

BZX384B15-V

Abstract: BZX384B68-V BZX384C15-V BZX384C22-V BZX384C5V6-V BZX384B18-V BZX384B27-V BZX384B33-V BZX384C12-V BZX384C13-V
Contextual Info: BZX384-V-Series Vishay Semiconductors Small Signal Zener Diodes Features • Silicon Planar Power Zener Diodes • The Zener voltages are graded according e3 to the international E 24 standard • Standard Zener voltage tolerance is ± 5 %; Replace "C" with "B" for ± 2 % tolerance

Contextual Info: FGP50B thru FGP50D New Product Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop d* e t n e Pat *Glass Encapsulation technique is covered by

Contextual Info: 31GF4 Vishay General Semiconductor Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast reverse recovery time • Low forward voltage drop • Low switching losses, high efficiency • High forward surge capability • Solder Dip 260 °C, 40 seconds

EGP20B

Abstract: EGP20C
Contextual Info: EGP20A thru EGP20G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop d* e t n e Pat * Glass Encapsulation technique is covered by

Contextual Info: SD101AWS / 101BWS / 101CWS Vishay Semiconductors Small Signal Schottky Diodes Features • For general purpose applications • The SD101 series is a Metal-on-silicon e3 Schottky barrier device which is protected by a PN junction guard ring • The low forward voltage drop and fast switching

EGP30D

Abstract: EGP30A
Contextual Info: EGP30A thru EGP30G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop d* e t n e Pat *Glass Encapsulation technique is covered by

Contextual Info: SD101AWS / 101BWS / 101CWS Vishay Semiconductors Small Signal Schottky Diodes Features • For general purpose applications • The SD101 series is a Metal-on-silicon e3 Schottky barrier device which is protected by a PN junction guard ring • The low forward voltage drop and fast switching

GSD2004WS-GS08

Abstract: GSD2004WS-GS18 GSD2004WS-V
Contextual Info: GSD2004WS-V Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • Silicon Epitaxial Planar Diode • Fast switching diode,especially suited for e3 applications requiring high voltage capability • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC