EGP30D Search Results

Contextual Info: EGP30A, EGP30B, EGP30C, EGP30D, EGP30F, EGP30G www.vishay.com Vishay General Semiconductor Glass Passivated Ultrafast Plastic Rectifier FEATURES • Superectifier structure for high reliability condition SUPERECTIFIER • Cavity-free glass-passivated junction

EGP30DT

Contextual Info: EGP30DT 3 Amp. Glass Passivated Avalanche Ultrafast Recovery Rectifier DO-201 AD Plastic Dimensions in mm. Voltage 200 V Current 3 A at 55 ºC 9.1 ± 0.3 62.5 ± 0.5 Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350 °C.

Contextual Info: EGP30DT 3 Amp. Glass Passivated Avalanche Ultrafast Recovery Rectifier DO-201 AD Plastic Dimensions in mm. Voltage 200 V Current 3 A at 55 ºC 9.1 ± 0.3 62.5 ± 0.5 Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350 °C.

Contextual Info: EGP30D Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current3.0 V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition)0.5 @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage950m @I(FM) (A) (Test Condition)3.0

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

EGP30

Abstract: EGP30A EGP30D EGP30G EGP30J EGP30M
Contextual Info: EGP30A THRU EGP30M SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER Reverse Voltage - 50 to 1000 Volts EEDD T T N N E E T T PPAA Forward Current - 3.0 Amperes DO-201AD FEATURES 1.0 25.4 MIN. GPRC (Glass Passivated Rectifier Chip) inside Glass passivated cavity-free junction

EGP30

Contextual Info: EGP30AH THRU EGP30MH SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER Reverse Voltage - 50 to 1000 Volts EEDD T T N N E E T T PPAA Forward Current - 3.0 Amperes DO-201AD FEATURES * Halogen-free type 1.0 25.4 MIN. 0.220(5.3) 0.190(4.8) DIA. * Lead free product, compliance to RoHs

diode cross reference

Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Contextual Info: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS

EGP30A

Contextual Info: EGP30A thru EGP30G Vishay Semiconductors formerly General Semiconductor Glass Passivated Ultrafast Rectifier * d e t Features n e t Pa GP20 Reverse Voltage 50 to 400 V Forward Current 3.0 A • Plastic package has Underwriters Laboratories Flammability Classification 94V-0

BYD74G

Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
Contextual Info: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any

2x062h

Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
Contextual Info: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1

QP3925H

Contextual Info: User Guide for FEBFAN9673_B01H5000A Evaluation Board 5 kW Three-Channel CCM PFC with 12 VSB Module Evaluation Board Featured Fairchild Product: FAN9673 Direct questions or comments about this evaluation board to: “Worldwide Direct Support” Fairchild Semiconductor.com

COLOR tv tube charger circuit diagrams

Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

EGP30A

Contextual Info: MCC TM Micro Commercial Components EGP30A THRU EGP30K
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • Superfast recovery time for high efficiency Glass passivated cavity-free junction, Plastic case

MBR1620CT

Abstract: 1.5Ke240 MBR5020 MBR5045PT BC337 AP6KE15C S9012 s9018 MP106 MB-106
Contextual Info: MCC PART INDEX Diodes PART NUMBER 1.5KE10(C)(A) 1.5KE100(C)(A) 1.5KE11(C)(A) 1.5KE110(C)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1.5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C)(A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1.5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

dx 400

Abstract: epoxy 5000 taitron EGP30A EGP30B EGP30D EGP30G EGP30J EGP30K Super Fast Recovery Rectifier
Contextual Info: 3.0A Sintered Glass Passivated Super Fast Recovery Rectifier EGP30A – EGP30K 3.0A Sintered Glass Passivated Super Fast Recovery Rectifier Features • • • • Sintered glass passivated SGP rectifier chip Low forward voltage, high current capability

Contextual Info: EGP30AH THRU EGP30MH SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER Reverse Voltage - 50 to 1000 Volts EEDD T T N N E E T T PPAA Forward Current - 3.0 Amperes DO-201AD FEATURES * Halogen-free type 1.0 25.4 MIN. 0.220(5.3) 0.190(4.8) DIA. * Lead free product, compliance to RoHS

EI33 bobbin

Abstract: TOP266EG Transformer ei33 smd transistor e42 Q vs frequency axial lead ferrite bobbin UTV817A EF32 TRANSFORMER LTV702FB TOP271EG power supply dvd player LG
Contextual Info: Application Note AN-47 TOPSwitch-JX Family Design Guide Introduction The TOPSwitch-JX is a highly integrated monolithic off-line switcher IC designed for off-line power supplies. TOPSwitch-JX integrated circuits enable design of power supplies up to 244 W,

AN-32

Abstract: Power Integrations UTV817A LTV702FB LTV703FB Transformer ei33 EEL16 EI33 bobbin EI40 transformer liteon transformer
Contextual Info: ® TOPSwitch-GX Flyback Design Methodology Application Note AN-32 Designing an off-line power supply involves many aspects of electrical engineering: analog and digital circuits, bipolar and MOS power device characteristics, magnetics, thermal considerations, safety requirements, control loop stability, etc.

High Efficient Rectifiers

Abstract: EGP30A
Contextual Info: MCC TM Micro Commercial Components EGP30A THRU EGP30K
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • x x 3.0 Amp Glass Passivated High Efficient Rectifiers 50 to 800 Volts

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —