17MAR00 Search Results

ec2612 phemt

Abstract: pHEMT transistor 30GHz EC2612 MAR 618 transistor LS 9814
Contextual Info: EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm pHEMT technology. Gate width is 120µm and the 0.15µm

3.579MHz

Abstract: 3.579MHz crystal XT49M
Contextual Info: Model XT49M Vishay Dale Quartz Crystals 3.579MHz to 66.0MHz FEATURES • Low profile. • Hermetically sealed. • Tape and reel packaging. STANDARD ELECTRICAL SPECIFICATIONS FREQUENCY RANGE MHz STANDARD SPECIFICATIONS Operating Temperature Range: 0°C to + 70°C. (Contact

MAX391

Abstract: murata Resonators CHV2241 harmonic mixer
Contextual Info: CHV2241 K-band Oscillator with integrated Q-band Harmonic Mixer GaAs Monolithic Microwave IC Description Main Features n K-band Oscillator + Q-band harmonic mixer n External resonator for centre frequency control and phase noise optimisation n High quality oscillator when coupled to

Contextual Info: EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm pHEMT technology. Gate width is 120µm and the 0.15µm

Contextual Info: CND2049 4-12GHz Frequency Divider by 4 Fixed Modulus Prescaler GaAs Monolithic Microwave IC Description The CND2049 is a low power consumption very high speed divider by 4 GaAs prescaler manufactured with a 0.7µm self aligned implanted MESFET process. The design is full differential input/output

CHM1193

Abstract: k-band gaas schottky diode
Contextual Info: CHM1193 K-Band Mixer GaAs Monolithic Microwave IC Description The CHM1193 is a balanced Schottky diode mixer based on a six quarter wave ring structure. It could be use in receiver or transmitter part. This circuit is manufactured with the Schottky diode process : 1 µm Schottky

CND2047-DAF

Abstract: CND2047 "Frequency Divider"
Contextual Info: CND2047 10GHz Frequency Divider by 4 Fixed Modulus Prescaler GaAs Monolithic Microwave IC Description The CND2047 is a low power consumption very high speed divider by 4 GaAs prescaler manufactured with a 0.7µm self aligned implanted MESFET process. The design is full differential input/output

LM334M

Abstract: LM234 14 pin national semiconductor lm334 LM334 spice model -20/A/LM134/LM234/spice models
Contextual Info: LM134/LM234/LM334 3-Terminal Adjustable Current Sources General Description The LM134/LM234/LM334 are 3-terminal adjustable current sources featuring 10,000:1 range in operating current, excellent current regulation and a wide dynamic voltage range of 1V to 40V. Current is established with one external resistor

CND2047

Abstract: UM1050
Contextual Info: CND2047 10GHz Frequency Divider by 4 Fixed Modulus Prescaler GaAs Monolithic Microwave IC Description The CND2047 is a low power consumption very high speed divider by 4 GaAs prescaler manufactured with a 0.7µm self aligned implanted MESFET process. The design is full differential input/output

r03003

Abstract: 77GHz Radar FMCW Radar FMCW circuit FMCW VCO 10GHZ oscillator ku-band oscillator 77GH
Contextual Info: CHV2242 Q-band VCO based on Ku-band Oscillator and Q-band Multiplier GaAs Monolithic Microwave IC Description Main Features n Ku-band VCO + Q-band multiplier n On chip varactor n External resonator for centre frequency control and phase noise optimisation

Contextual Info: Model XT49M VISHAY Vishay Dale Quartz Crystals 3.579MHz to 66.0MHz FEATURES • Low profile. • Hermetically sealed. • Tape and reel packaging. STANDARD ELECTRICAL SPECIFICATIONS M ODE O F VIBRATION ES R MAX. Ohms 3.579 - 3.999 “AT” Fundamental 150

t0810

Contextual Info: T0810 3-Channel Laser Driver with RF Osc. and APC Amplifier Description The T0810 is a laser diode driver for the operation of a grounded laser diode for CD-RW drives. It includes three channels for three different optical power levels which are controlled by a separate IC. The read channel generates a continuous output level whereas the channels 2 and

EC2612

Abstract: ec2612 pHEMT MAR 618 transistor
Contextual Info: EC2612 RoHS COMPLIANT 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm

LTC4098-3.6

Abstract: l-band Phase Shifter 011010 SXA-01GW-P0.6
Contextual Info: CHP6013 L-band Phase Shifter GaAs Monolithic Microwave IC Description The CHP6013 is a L-band monolithic 6 bits phase shifter. The circuit is manufactured with a standard 0.7µm MESFET process : via holes through the substrate, air bridges and electron beam gate lithography.