17ARE Search Results

MX9003

Abstract: OX 8050 ox-8050 oscilloscope ox oscilloscope ox 2000 tv service menu AM0030N EP7043
Contextual Info: OX 8050 60 MHz ANALOG / DIGITAL OSCILLOSCOPE User's manual Copyright § ! T lf ilË ü L 906121457-Ed. 1 -09/98 CONTENTS 1. GENERAL INSTRUCTIONS. 4 1.1. Precautions and safety

Contextual Info: 7/ SGS-THOMSON M^mooT IMlMIIlLIOTiMDtgS M29W400B 4 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical

Contextual Info: M29F400T M29F400B 4 Mbit x8/x16, Block Erase Single Supply Flash Memory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACC ESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

Contextual Info: W # SG S-TH O M SO N k7#1 KiflD gl^ [l[Ul Tr[S®SfflDtes M29F002T M29F002B 2 Mb (x8, Block Erase SINGLE SUPPLY FLASH MEMORY • 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACC ESS TIME: 70ns ■ FAST PROGRAMMING TIME: 10|os typical

M29W400B

Abstract: M29W400 M29W400T
Contextual Info: M 29W 400T M 29W 400B 4 Mbit 512Kb x8 or 256Kb x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10 |iS by Byte / 1 6|os by Word typical

28HC64b

Contextual Info: AT28HC64B Features • Fast Read Access Time - 55 ns • Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times Page Write Cycle Time: 2 ms maximum 1 to 64 Byte Page Write Operation • Low Power Dissipation

Contextual Info: M29W400T M29W400B 4 Mbit 512Kb x8 or 256Kb x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical

Contextual Info: M29W400T M29W400B 4 Mbit x8/x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

Contextual Info: M29F400T M29F400B 4 Mbit 512Kb x8 or 256Kb x16, Block Erase Single Supply Flash Memory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 55ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

5045-02A

Abstract: BL 05A
Contextual Info: 2 E -rXIM 2£0 3l0-N 3 o » NOTES I (SI < io . l/l I MATERIAL WAFE R : 66NYL0N, UL94V-0 PIN : 00.635 BRASS, TIN OVER COPPER PLATING & TO BE APPLIED FOR 6CKT. AND MO RE THAN 6CKT. & NO SLIT IS PROVIDED FOR 5CKT. AND LESS THAN 5CKT. 4. LEGEND 5045-NA-* DYED COLOR CODE -BL

Contextual Info: AT28LV64 Features • 2.7 V to 3.6 V Supply Full Read and Write Operation • Low Power Dissipation 8 mA Active Current 50 |iA CMOS Standby Current • Read Access Time • 200 ns • Byte Write - 3 ms • Direct Microprocessor Control DATA Polling READY/BUSY Open Drain Output