171819 Search Results

Contextual Info: Extract from the online catalog QC 1,5/10-STF Order No.: 1718193 Plug component, Nominal current: 12 A, Nom. voltage: 500 V, Pitch: 5 mm, Number of positions: 10, Color: green

Contextual Info: Extract from the online catalog QC 1,5/10-STF Order No.: 1718193 Plug component, Nominal current: 12 A, Rated voltage III/2 : 630 V, Number of positions: 10, Pitch: 5 mm, Color: green

Contextual Info: Extract from the online catalog QC 1,5/10-STF Order No.: 1718193 Plug component, Nominal current: 12 A, Nom. voltage: 500 V, Pitch: 5 mm, Number of positions: 10, Color: green

Contextual Info: Extract from the online catalog QC 1,5/10-STF Order No.: 1718193 Plug component, Nominal current: 12 A, Rated voltage III/2 : 630 V, Pitch: 5 mm, Color: green, Metal surface: Tin-plated

Z80SIO

Abstract: z80 mpu
Contextual Info: T O SH IB A TMPZ84C10A TM PZ84C10AP-6 / TM PZ84C10AM-6 /TMPZ84C10AT-6 CMOS-Z8O DMA : DIRECT MEMORY ACCESS CONTROLLER 1. GENERAL DESCRIPTION AND FEATURES TMPZ84C10A hereinafter referred to as DMA is th e CMOS Z80 DMA (Direct Memory Access Controller) which provides low power consum ing b u t pow erful and

22V10B

Abstract: PALC22V10B PALCE22V10 V10B C22V10B C2 2V
Contextual Info: 1P AL C2 2V 10B fax id: 6006 This is an abbreviated datasheet. Contact a Cypress representative for complete specifications. For new designs, please refer to the PALCE22V10 PALC22V10B Reprogrammable CMOS PAL Device — Phantom array Features — Top test

Contextual Info: IDT7216L IDT7217L 1 6 x 1 6 PARALLEL CMOS MULTIPLIERS Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 1 6 x 1 6 parallel multiplier with double precision product • 20ns clocked multiply time • Low power consumption: 120mA • Produced with advanced submicron CEMOS high

Contextual Info: JW- 8 9 1993 H a r r is a H I 1Ë 1t 6 6 Ê È È S E M I C O N D U C T O R 8-Bit, 250MSPS Flash A/D Converter ju iy 1993 Features • Description Differential Linearity Error ±0.5 LSB or Less The HI1166 is an 8-bit ultra high speed flash Analog-to-Digital converter IC capable of digitizing analog signals at a max­

12L10

Abstract: 16L6 20L10 20L8 PLD20G10C 12DC
Contextual Info: 4bE SEMICONDUCTOR SSÔTbtS D OGGbTMM PRELIMINARY CYPRESS SEMICONDUCTOR Features • Ultra high speed supports today’s and tomorrow’s fastest microprocessors — tpD = 7.5 ns — tsu = 3 ns — fM A X = 1 0 5 M tte • Reduced ground bounce and under­

DIP20

Abstract: TDA8213 TDA8214B TDA8219 24 pin outputs decoder ic 9V DC INPUT and gate ic
Contextual Info: TDA8219 PAL/NTSC DECODER AND VIDEO PROCESSOR . . . . RGB OUTPUTS SINGLE CHIP CHROMA AND LUMINANCE PROCESSOR DC CONTROL BRIGHTNESS, CONTRAST, SATURATION AND HUE FEW EXTERNAL COMPONENTS FAST BLANKING INPUT FOR OSD INSERTION SUPER SANDCASTLE INPUT DESCRIPTION

9V DC INPUT and gate ic

Abstract: TDA8219 DIP20 TDA8213 TDA8214B
Contextual Info: TDA8219 PAL/NTSC DECODER AND VIDEO PROCESSOR . . . . RGB OUTPUTS SINGLE CHIP CHROMA AND LUMINANCE PROCESSOR DC CONTROL BRIGHTNESS, CONTRAST, SATURATION AND HUE FEW EXTERNAL COMPONENTS FAST BLANKING INPUT FOR OSD INSERTION SUPER SANDCASTLE INPUT DESCRIPTION

th 2167

Contextual Info: D S 2167 /D S 2168 DALLAS SEMICONDUCTOR D S 2 1 6 7 /D S 2 1 6 8 ADPCM Processor PIN ASSIGNMENT FEATURES - V3T- • Speech compression chip compatible with standard ADPCM algorithms: - - DS2167 supports “new” T1Y1 recommenda­ tions July 1986 and “new” CC1TT G.721 rec­

DS2165Q

Contextual Info: D A LLA S s e m ic o n d u c to r DS2165/DS2165Q 16/24/32Kbps ADPCM Processor PIN ASSIGNM ENT FEATURES • Compresses/expands 64Kbps PCM voice to/from either 32Kbps, 24Kbps, or 16Kbps • Dual, fully independent channel architecture; device can be programmed to perform either:

hirel

Abstract: tkf 912
Contextual Info: PC7410 PowerPC 7410 RISC Microprocessor Datasheet Features • • • • • • • • • • • • • • • • • 22.8 SPECint95 estimated , 17SPECfp95 at 500 MHz (estimated) 917MIPS at 500 MHz Selectable Bus Clock (14 CPU Bus Dividers Up To 9x)

0828H

Contextual Info: PC755/745 PowerPC 755/745 RISC Microprocessor Datasheet Features • • • • • • • • • • • • • • • 18.1SPECint95, Estimates 12.3 SPECfp95 at 400 MHz PC755 15.7SPECint95, 9SPECfp95 at 350 MHz (PC745) 733 MIPS at 400 MHz (PC755) at 641 MIPS at 350 MHz (PC745)

Contextual Info: fax id: 6011 PALCE22V10 'CYPRESS Flash Erasable, Reprogrammable CMOS PAL Device 5 ns tPD 181-MHz state machine Features • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (5 ns) • CMOS Flash EPROM technology for electrical erasability and reprogramm ability

Contextual Info: ÜIAFE& SCALE INTEGRATION B'iE D B T S 3 ‘ì t i clG GOOObST b Hl ül AF _ WS27C512F W A F E R S C A L E IN T E G R A T IO N , IN C . T * 4 k - 13 , - Z p HIGH SPEED 64K x 8 CMOS EPROM KEY FEATURES • Fast Access Time • Low Power Consumption

DS2165Q

Contextual Info: D S 2165/D S2165Q DALLAS SEMICONDUCTOR D S 2 1 6 5 /D S 2 1 6 5 Q 16/24/32Kbps ADPCM Processor PIN ASSIGNMENT FEATURES • Compresses/expands 64Kbps PCM voice to/from either 32Kbps, 24Kbps, or 16Kbps • Dual, fully independent channel architecture; device

ST72262G2

Abstract: universal AC Motor soft start ST72260G ST72260G1 ST72262G ST72262G1 ST72264G ST72264G1 SDIP32 DIODE 044 1334 smd
Contextual Info: ST72260G, ST72262G, ST72264G 8-BIT MCU WITH FLASH OR ROM MEMORY, ADC, TWO 16-BIT TIMERS, I2C, SPI, SCI INTERFACES PRODUCT PREVIEW • ■ ■ ■ ■ Memories – 4 K or 8 Kbytes Program memory: ROM or Single voltage extended Flash XFlash with read-out protection write protection and InCircuit Programming and In-Application Programming (ICP and IAP)

962n

Contextual Info: 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W2MW16BAFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ • Random Access Time: 70ns

cr1 5 p26z

Contextual Info: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: – 1.7V–1.95V VCC – 1.7V–3.3V1 VCCQ

Contextual Info: 32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W2MW16BGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages

BCR100

Contextual Info: 70 128Mb/64Mb Async/Page/Burst CellularRAM 1.5 Memory Figure 1: Features • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–1.95V VCCQ • Random access time: 70ns • Burst mode READ and WRITE access:

cy7C344

Abstract: C3M11
Contextual Info: / 9 / I J/ 3 1 Revision: Friday, Apni IS, 1934 CY7C344 f ß CYPRESS i 32-Macrocell MAX FPT P Features Functional Description • High-performance, higfa-deiislty re­ placement for TTL, 74HC, and cus­ tom logic Available in a 28-pin 300-mil DIP or •win­