17-33 SOT Search Results

10kf12

Abstract: R113T B06B-3100-141 BD161 2n3904 d29 LM358T si4431 tl494 F1AJ3 TC351
Contextual Info: 12V MH2 26HOLD8 MH1 26HOLD8 SHUT DOWN I_ALARM BAT FULL1 BAT CH_A SYS_SDA SYS_SCL VCC3 VCC B+ 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 CN8 R166 300/F 2 4 6 8 10 12 14 16

SMC1602

Abstract: SN7002DW c3231 Q2576 r2561 C3239 C3303 C2651 C5060 U4900
Contextual Info: 8 6 7 C B A PAGE PDF 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 2 3

IRF5505

Abstract: C3427 SN7002DW LD1807 343S0284 apple AirPort Extreme h11m r3361 HC17051 1n914 onsemi
Contextual Info: 6 7 B A 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 REV 08/03/04 CIRCUIT

GPI04

Contextual Info: 3 2 2 R29 LED5 475 1% B R41 33 2512 VREG R37 33 2512 R5 100 1% C5 C5 OPT Q5 0805 BSS308PE 5 16 17 19 20 C31 10nF S5 21 22 23 Q4 BSS308PE 24 C4 C4 OPT 0805 S4 SDO IB C10 SDI(IC) S10 SCK(ILP) C9 CSB(ILM) S9 ISOMD C8 WDT S8 DRIVE C7 VREG S7 SWTEN C6 VREF1 S6

Contextual Info: INSTRUCTION MANUAL 200B-G Tone Probe English .1 Français .9 Español.17 Deutsch.25 Italiano .33 Português do Brasil.41 with Adjustable Volume 200EP-G Tone Probe with Adjustable Volume, Visual Signal Indicator, Headset Jack,

Contextual Info: HMC315 / 315E v02.0605 AMPLIFIERS - SMT 8 GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz Typical Applications Features The HMC315 / HMC315E is ideal for: Saturated Output Power: +17 dBm • Fiber Optic OC-48 Systems Output IP3: +33 dBm • Microwave Test Instrumentation

HMC315

Contextual Info: MICROWAVE CORPORATION HMC315 v01.0701 GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC315 is ideal for: Saturated Output Power: +17 dBm • Fiber Optic OC-48 Systems Output IP3: +33 dBm • Microwave Test Instrumentation

Contextual Info: MICROWAVE CORPORATION HMC315 v01.0701 GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC315 is ideal for: Saturated Output Power: +17 dBm • Fiber Optic OC-48 Systems Output IP3: +33 dBm • Microwave Test Instrumentation

Contextual Info: HMC315 v01.0701 MICROWAVE CORPORATION GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz AMPLIFIERS - SMT 1 Typical Applications Features The HMC315 is ideal for: Saturated Output Power: +17 dBm • Fiber Optic OC-48 Systems Output IP3: +33 dBm • Microwave Test Instrumentation

IC ax 2008 USB FM PLAYER

Abstract: STi7110 IC ax 2008 used for mp3 player le88221 PI7C9X440SL PI7C9X111SL bl3458 pi3eqx6701 PI3EQX5701 PAS5201
Contextual Info: Table of Contents PAGE 2 3 About Pericom Applications 13 Products - Signal Integrity 14 17 18 19 PCI Express ReDriver SAS/SATA/XAUI ReDriver Digital Video Signal Integrity DisplayPort, HDMI, DVI USB3 ReDriver 21 Products - Connectivity 23 25 27 33 35 45

HMC315

Contextual Info: HMC315 / 315E v02.0605 AMPLIFIERS - SMT 8 GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz Typical Applications Features The HMC315 / HMC315E is ideal for: Saturated Output Power: +17 dBm • Fiber Optic OC-48 Systems Output IP3: +33 dBm • Microwave Test Instrumentation

Contextual Info: SAMSUNG SE MICON DU CT OR MJE171 INC lqE 0 | QOG?^^ 2 | PNP EPITAXIAL SILICON TRANSISTOR T-33-17 LOW FREQUENCY AMPLIFIER LOW CURRENT, HIGH SPEED SWITCHING APPLICATION TO*126 ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic • Coliector-Base Voltage • Collector-Emitter Voltage

Contextual Info: BD202F; BD204F BDX78F PHILIPS in t e r n a t io n a l SbE ]> • 7110fl2t 0042fl5b flbO M P H I N T-33-17 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors in SOT186 envelopes with an electrically insulated mounting base. NPN complements are BD201F, BD203F and BDX77F respectively.

b0349

Abstract: BF871S BF872S BF872S TELEFUNKEN BF869S BF 872 TRANSISTOR Bf 264 transistor BC 236 41 BF transistor TRANSISTOR C 2570
Contextual Info: TELEFUNKEN ELECTRONIC 17E ì> • fi^EOQ^b 0 Q C m 3 1 BF 870 S • BF 872 S TTHLIlIFÜÎWilîStlGsOelectronic Silicon PNP Epitaxial Planar RF Transistors r- 33-17 Applications: Video-B-class power stages in TV-receivers Features: • High reverse voltage

SAV-541

Abstract: SAV-541 S-PARAMETER MODEL SAV541 avago marking -2
Contextual Info: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

Contextual Info: Ultra Low Noise, Medium Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

Contextual Info: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

Filtronic Compound Semiconductors

Contextual Info: FPD1050SOT343 Preliminary Data Sheet LOW NOISE HIGH LINEARITY PACKAGED PHEMT FEATURES: • • • • • • RoHS PACKAGE 22 dBm Output Power P1dB 17 dB Gain at 1.85 GHz 0.7 dB Noise Figure at 1.85 GHz 33 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 6 GHz

D F 331 TRANSISTOR

Abstract: lt 332 diode samsung tv NPN Transistor 1A 800V to - 92 C 3311 transistor transistor t 04 27
Contextual Info: SAMSUNG SEMICONDUCTOR 14E 0 INC 17^4142 I OOQ?bkS T NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5012 T-33-11 COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN TO-3P(F) High Collector-Base Voltage VCb o = 1 5 0 0 V ABSOLUTE MAXIMUM RATINGS (Ta= 25°C )

c6073

Abstract: C6074 C6091 C6089 1CA033 ar9103 SIL1178 NEC C3568 c6092 U2390
Contextual Info: 6 7 REV STD D CSA 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM

SAV-541

Abstract: SAV-541 S-PARAMETER MODEL "3570 1210" ATF-54143 MMM1362 N8975A ATF-54143 application notes
Contextual Info: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

TRANSISTOR BC 136

Abstract: transistor BD 140 transistor bd 126 BD 140 transistor 16BD136 transistor bc 138 TRANSISTOR 138 TRANSISTOR BD 136 BD 139 transistor transistor bd 711
Contextual Info: TELEFUNKEN ELECTRONIC m ilFW K lIM electronic 17E D • fl^HDD'ib DQ’O TBR^ IALCÛ BD 136 BD 138 Ibd 140 Ci*tirtTtehnotoûte» T-33-17 Silicon PNP Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available

Contextual Info: SAM SUN G SE MI C O N D U C T OR INC MJE172 D | 7^145 ÛÛQîtTB *f | PNP EPITAXIAL SILICON TRANSISTOR T-33-17 LOW FREQUENCY AMPLIFIER LOW CURRENT, HIGH SPEED SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Cofector-Base Voltage | CoBector-Emitter Voltage

Contextual Info: N AMER PHILIPS/DISCRETE BSE D • tbS3T31 001733^ S ■ I BFQ54 _ _A T-33-17 PNP 1 GHz WIDEBAND TRANSISTOR The BFQ54 is a pnp transistor in a SO T122 package, primarily intended for M A T V and microwave amplifiers, such as radar systems, spectrum analysers etc.