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    16MJ Search Results

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    16MJ Price and Stock

    ODU-USA Inc

    ODU-USA Inc S23K0C-P16MJG0-800S

    - Bulk (Alt: S23K0C-P16MJG0-800S)
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    Avnet Americas S23K0C-P16MJG0-800S Bulk 11 Weeks 1
    • 1 $148.43
    • 10 $134.03
    • 100 $102.30
    • 1000 $102.30
    • 10000 $102.30
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    ODU-USA Inc S23K0C-P16MJG0-010S

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    Avnet Americas S23K0C-P16MJG0-010S Bulk 11 Weeks 1
    • 1 $148.43
    • 10 $134.03
    • 100 $102.27
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    • 10000 $102.27
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    ODU-USA Inc S13L0C-P16MJG0-0200

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    Avnet Americas S13L0C-P16MJG0-0200 Bulk 11 Weeks 1
    • 1 $135.48
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    • 100 $83.54
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    ODU-USA Inc S13K0C-P16MJG0-6500

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    Avnet Americas S13K0C-P16MJG0-6500 Bulk 11 Weeks 1
    • 1 $148.43
    • 10 $134.03
    • 100 $102.30
    • 1000 $102.30
    • 10000 $102.30
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    ODU-USA Inc S23K0C-P16MJG0-900S

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    Avnet Americas S23K0C-P16MJG0-900S Bulk 11 Weeks 1
    • 1 $148.43
    • 10 $134.03
    • 100 $102.27
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    16MJ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    PABX

    Abstract: Krone krone telephone cable RJ45 panel jack Krone RJ45 faceplate
    Contextual Info: MHKK-C5 Series - Modular Patch Panels Category 5 Order Code MHKK-16MJ8-C5 MHKK-24MJ8-C5 MHKK-32MJ8-C5 MHKK-48MJ8-HD-C5 MHKK-48MJ8-C5 MHKK-16MJ8-S-C5 MHKK-32MJ8-S-C5 MHKK-48MJ8-S-C5 • Patch Panels exceed TIA/EIA Category 5 100 MHz performance thresholds.


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    mhkk-16mj8-c5mhkk-24mj8-c5mhkk-32mj8-c5mhkk-48mj8-hd-c5+9mhkk-48mj8-c5mhkk-16mj8-s-c5mhkk-32mj8-s-c5mhkk-48mj8-s-c5pabxkronekrone telephone cablerj45 panel jackkrone rj45 faceplate PDF

    B083D

    Abstract: u82720 A110D TDA4100 ub8830d V40511D taa981 A109D sy 710 IC 7447
    Contextual Info: > i ! U O i j q > i a | a S [ ^ ] 0 [ y y H erstellerbetriebe Bei den einzelnen Erzeugnissen werden die Herstellerbetriebe durch die nachfolgend angegebenen Symbole gekennzeichnet: VEB M ik ro e le k tro n ik „K a rl M a r x “ Erfurt L e itb e tr ie b im VEB K o m b in a t M ik ro e le k tr o n ik


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    b083du82720a110dtda4100+6ub8830dv40511dtaa981a109dsy 710ic 7447 PDF

    Contextual Info: T O SH IB A TLP1209 C7 ,TLP1221 (C7) TOSHIBA PHOTOINTERRUPTER INFRARED LED + PHOTO IC TLP1209(C7)f TLP122KC7) COPIER, PAGE PRINTER, FACSIMILE Unit in : mm AUTOMATIC VENDING MACHINE, TERM INAL EQUIPM ENT IN BANKING FACILITIES VARIOUS POSITION DETECTION SENSOR


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    tlp1209tlp1221tlp122kc7 PDF

    QAC22

    Abstract: ez 948 ic
    Contextual Info: SAM S UN G E L E C T R O N I C S INC b?E D 7 T b 4 1 H E D O l b SS l VbT • SMûK ■ KM44C4002 CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • The Samsung KM44C4002 is a high speed CMOS 4 ,1 9 4 ,3 0 4 x 4 D ynam ic Random A ccess Memory. Its


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    km44c4002km44c4002-7km44c4002-8km44c4002-6+324-leadqac22ez 948 ic PDF

    G60T120

    Abstract: IGW60T120 IGBT 1200V 60A PG-TO-247-3
    Contextual Info: IGW60T120 TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • C Best in class TO247 Short circuit withstand time – 10 s Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop® and Fieldstop technology for 1200 V applications


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    igw60t120g60t120igbt 1200v 60apg-to-247-3 PDF

    Contextual Info: £> THIS DRAVffiGAtOEESTCNlSiHIi CON­ STITUTES A PROPRIETARY DESIEN OF PACKARD ELECTRIC DIVISHSI ftMJ IS NOT TO BE OUPLICflTED OR REPRDDÜCED WITH­ OUT AUTHORITY CF PACKARD ELECTHEC DIVIS10M. m u . REVISION RECORD 1209 2435 31MR89 12077907 WAS SEPARATE "E" SIZE;


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    divis10m31mr89j22s2l2077s PDF

    2SK2675

    Abstract: FP7W90HVX2
    Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2675 N-Channel Enhancement type OUTLINE DIMENSIONS FP7W90HVX2 Case : ITO-3P (Unit : mm) 900V 7A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.


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    2sk2675fp7w90hvx2160mj PDF

    2SK2674

    Abstract: F7W90HVX2
    Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2674 F7W90HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P (Unit : mm) 900V 7A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.


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    2sk2674f7w90hvx2160mj PDF

    Contextual Info: Target IGW60T120 TrenchStoP Series Low Loss IGBT in Trench and Fieldstop technology C • • • • • • Best in class TO247 Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technology for 1200 V applications offers :


    Original
    igw60t120o-247acq67040-s4521feb-02 PDF

    RCD snubber

    Abstract: calculation of IGBT snubber IGBT snubber for inductive load RC VOLTAGE CLAMP snubber circuit chokhawala carroll snubber design tool snubber resistance of IGBT IGBT snubber RCD snubber for igbt 150a gto in electronic rcd snubber
    Contextual Info: Snubber C onsiderations for IG BT A pplications Yi Zhang, Saed Sobhani, Rahul Chokhawala International Rectifier Corporation Applications Engineering 233 Kansas St., El Segundo, CA 90245 Abstract: Snubber circuits can be used to protect fast switching IGBTs from the turn-on and turn-off voltage


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    an-983rcd snubbercalculation of igbt snubberigbt snubber for inductive load+7rc voltage clamp snubber circuitchokhawala carroll snubber design toolsnubber resistance of igbtigbt snubberrcd snubber for igbt150a gtoin electronic rcd snubber PDF

    G60T120

    Abstract: PG-TO-247-3-21
    Contextual Info: IGW60T120 TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • C Best in class TO247 Short circuit withstand time – 10 s Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop® and Fieldstop technology for 1200 V applications


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    igw60t120g60t120pg-to-247-3-21 PDF

    G60T120

    Contextual Info: IGW60T120 TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology C • • • • • • • • • • Best in class TO247 Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop® and Fieldstop technology for 1200 V applications


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    igw60t12015stancesg60t120 PDF

    2SK2675

    Abstract: 160mJ FP7W90HVX2 16mj
    Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2675 N-Channel Enhancement type OUTLINE DIMENSIONS FP7W90HVX2 Case : ITO-3P (Unit : mm) 900V 7A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


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    2sk2675fp7w90hvx2160mj16mj PDF

    Contextual Info: KM44C4002A/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C4002A/AL/ALL/ASL is a high speed CMOS 4,194,304 b i t x 4 Dynamic Random Access Memory. Its design is optimized for high


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    km44c4002a/al/all/asl110ns130ns150ns+324-lead300milt5h4142 PDF

    G60T120

    Abstract: IGBT 1200V 60A IGW60T120 PG-TO-247-3
    Contextual Info: IGW60T120 TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • C Best in class TO247 Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply ®


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    igw60t120g60t120igbt 1200v 60apg-to-247-3 PDF

    MOCVD

    Abstract: THOMSON-CSF Power Laser diode
    Contextual Info: TH-Q1201-A / TH-Q1301-A / TH-Q1401-A 60W / 80W / 100W QUASI-CW LINEAR BAR ARRAYS DESCRIPTION The TH-Q1X01-A products are a high optical power laser diode sources for quasi-CW operation. The ‘X’ index stands for the type of diode bar: X=2, 3, 4 respectively for 60W, 80W,


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    th-q1201-ath-q1301-ath-q1401-ath-q1x01-a+3s/100hzmocvdthomson-csf power laser diode PDF

    transistor c1417

    Abstract: TH-C1720-F6 THOMSON ELECTRONIQUES TUBES c1417 Thomson-CSF semiconductor c1417 transistor TH-C1720 Thomson-CSF power laser diode price list C5520 c5530
    Contextual Info: Welcome to Thomson-CSF Laser Diodes' site Welcome to the Web site of THOMSON-CSF Laser Diodes TLD your partner in Optoelectronic. TLD offers a large variety of High Power Laser Diodes (795 - 980nm), specific optoelectronic functions, and laser diode components


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    980nm100ppbtransistor c1417th-c1720-f6+8thomson electroniques tubesc1417thomson-csf semiconductorc1417 transistorth-c1720thomson-csf power laser diode price listc5520c5530 PDF

    Contextual Info: IBM13N16644HC IBM13N16734HC 16M x 64/72 2 Bank Unbuffered SDRAM Module Features • Programmable Operation: - CAS Latency: 2, 3 - Burst Type: Sequential or Interleave - Burst Length: 1, 2, 4, 8, Full-Page FullPage supports Sequential burst only - Operation: Burst Read and Write or Multiple


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    ibm13n16644hcibm13n16734hc168-pin16mx64/72+2pc10066mhz PDF

    via vn800

    Abstract: PS-2403D F-120-9A VN800 VDMOSFET 2403D AN1351 IEC801-6 L6376 VN340
    Contextual Info: AN1351 APPLICATION NOTE VIPower AND BCDmultipower: MAKING LIFE EASIER WITH ST’s HIGH SIDE DRIVERS P. Laupheimer 1. ABSTRACT Industrial environments need high side switches in applications like PLC programmable logic controllers as actuators of lamps, valves and relays. STMicroelectronics is covering the complete


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    an1351via vn800ps-2403df-120-9a+6vn800vdmosfet2403diec801-6l6376vn340 PDF

    2SK2674

    Abstract: F7W90HVX2
    Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2674 F7W90HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P (Unit : mm) 900V 7A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


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    2sk2674f7w90hvx2160mj PDF

    16mJ

    Abstract: 2SK2675 FP7W90HVX2
    Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2675 N-Channel Enhancement type OUTLINE DIMENSIONS FP7W90HVX2 Case : ITO-3P 900V 7A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.


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    2sk2675fp7w90hvx2160mj16mj PDF

    G60T120

    Abstract: IGW60T120 IGBT 1200V 60A 2R210
    Contextual Info: IGW60T120 TrenchStop Series ^ Low Loss IGBT in Trench and Fieldstop technology • • • • • • • • • • C Best in class TO247 Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technology for 1200 V applications offers :


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    igw60t120g60t120substancesg60t120igbt 1200v 60a+12r210 PDF

    G60T120

    Contextual Info: IGW60T120 TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology C • • • • • • • • • • Best in class TO247 Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop® and Fieldstop technology for 1200 V applications


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    igw60t12015stancesg60t120 PDF

    2dua

    Contextual Info: KM44C4002A/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Static Column Mode GENERAL DESCRIPTION FEATURES • Performance range: tRAC tCAC tRC K M 44C 4002A /A L/A LL/A S L-5 50ns 13ns 90ns K M 44C 4002A /A L/A LL/A S L-6 60ns 15ns 110ns K M 44C 4002A /A L/A LL/A S L-7


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    km44c4002a/al/all/asl110ns130ns150ns+424-lead300mil400mil2dua PDF