MOCVD Search Results

9315b

Abstract: SLD201V SLD201V3
Contextual Info: SLD201U-3/V-3 SONY« 50mW High Power Laser Diode Package Outline Description SLD201 U -3/V-3 is a gain-guided highpower laser diode fabricated by MOCVD. U nit: mm SLD201U-3 Features • Low noise S /N = 8 0 dB Typ. at 5 mW. Structure GaAIAs double-hetero visible laser diode.

302v

Contextual Info: SLD302V SONY 200m W High Power Laser Diode Description SLD 302V are gain-guided, high-power laser diodes fabricated by MOCVD. M OCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Small operating current Package Outline

2 Wavelength Laser Diode

Abstract: laser diode submount 915 submount
Contextual Info: COMMERCIAL LASERS Diode Lasers, High Brightness 10 W, 9xx nm 63xx Series Key Features • 100 µm emitter width • High-efficiency, MOCVD quantum well design • High reliability The 63xx series diode lasers represent an advancement in high continuous-wave

3335

Abstract: PIN-Photodiode-Array PHOTODIODE 4 CHANNEL ARRAY photodiode die WAFER Photodiode Array EMCORE photodiode array
Contextual Info: 1 x 12 GaAs PIN Photodiode Array Product Description EMCORE’s 12 channel Gallium Arsenide GaAs PIN photodiode array is designed for multimode fiber applications. Utilizing EMCORE’s own state-of-the-art MOCVD wafer foundry and device fabrication facility guarantees a reliable high volume fabrication source of package ready die to meet the growing

LDX-3215-1065

Abstract: 1055 150X1
Contextual Info: LDX Optronics Inc. LDX-3215-1065 1065 nm 1.5 W Laser Diode High Power CW Operation 1.5 watts High Brightness-150 µm emitter size. Wavelength 1065 ± 10 nm standard The LDX-3215-1065 laser diode is a high power, multimode, infrared laser diode. These InGaAs broad-area, gain-guided lasers are produced using MOCVD growth which offers high

Contextual Info: LDX-2106-640 • High Power CW Operation- 125 milliwatts • Highly Visible to the Eye. • Wavelength 640 ±5 nm Standard The LDX-2106-640 laser diode is a high power, multimode, visible red laser diode. These AlGaInP broad-area, gain-guided lasers are produced using MOCVD growth which offers high efficiency, low

675nm

Abstract: Laser Diode 10 pin
Contextual Info: LASER DIODE LC-100M-675C/D LC-100M-675C/D is 675nm laser diode based on GaInAlP multi quantum well structure fabricated by MOCVD semiconductor lasers. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability.

laser diode 905nm

Contextual Info: LASER DIODE LC-50S-905D LC-50S-905D is 905nm AIGaAs/GaAS single quantum well fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. LC-50S-905D is a CW single mode injection semiconductor laser

Laser Diode for dvd 400 mW

Abstract: CS405065M5X TS 5225 laser diode 405nm 405nm Laser 5 mw
Contextual Info: CS405065M5X 405nm Compact Laser Diode Modules Key features Visible light λ = 405nm Output powers = 65mW CW Package type=5.6 mm Φ High reliability Applications Blu- ray Disc/HD DVD drive Other new application Laser Diode Solutions CS405065M5X is a MOCVD grown 405nm band InGaAs laser diode. It's

CS4050205M

Abstract: 405nm 5mW laser diode 405nm 20mW TS 5225 405nm laser diode 405nm Laser 5 mw
Contextual Info: CS4050205M 406nm Compact Laser Diode Key features Visible light λ= 405nm Output powers =20mW Package type=5.6mmΦ High reliability Applications Blu-ray Disc/HD DVD drive Other new application Laser Diode Solutions CS4050205M is a MOCVD grown 405nm band GaN laser diode. It's an

AlGaAs laser diode

Contextual Info: Laser Diodes LCQ78530S5N/M/P AlGaAs Laser Diode Ver. 0 2004 ♦OVERVIEW LCQ78530S5N/M/P is a MOCVD grown 780nm band AlGaAs laser diode with quantum well structure. It’s an attractive light source, with a typical light output power of 30mW for industrial optical module

UAEP3626-DE0

Abstract: Uniroyal Optoelectronics Uniroyal Technology POWER UAEP3626-X00 TO46 37525
Contextual Info: POWERBR ite ä ä Technology UAEP3626-X00 AllnGaP EPITAXIAL WAFER FEATURES AND BENEFITS •IMBEDDED DISTRIBUTIVE BRAGG REFLECTOR FOR SUPERIOR BRIGHTNESS •EXCELLENT WAVELENGTH AND BRIGHTNESS UNIFORMITY •NARROW SPECTRAL WIDTH •GROWN IN UOE HIGH VOLUME MOCVD

Contextual Info: HITACHI/ OPTOELECTRONICS 54E J> 44^fc.5GS Q012DE7 261 HL7831G/HG GaAIAs LD Description 7 The HL7831G/HG are 0.78 fun band GaAIAs laser diodes with a double heterojunction structure. MOCVD technology is employed for precise device analysis and optimization to realize low noise.

N 821 Diode

Abstract: laser diode 905nm LCQ90510S5N n type laser diode
Contextual Info: LCQ90510S5-N/M/P InGaAs Laser Diode Jun.2004. Ver. 0 ♦OVERVIEW LCQ 90510S5-Serie is a MOCVD grown 905nm band InGaAs laser diode with quantum well structure. It’s an attractive light source, with a typical light output power of 10mW for Laser, industrial optical module and sensor application

U 821 B

Abstract: 10mw 850nm to ld
Contextual Info: /&Q856103 AlGaAs Laser Diode Ver.1 APR.2005 ♦OVERVIEW /&46103 is a MOCVD grown 850nm band AlGaAs laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 10mW for industrial optical module

20 watt laser diode

Contextual Info: TH-Q1110-B HIGH TEMPERATURE 600W QCW STACKED ARRAYS DESCRIPTION TH-Q1110-B is a conductively cooled laser diodes stack array designed to operate at very high temperature. Laser diode bar array benefit of fully mastered MOCVD quantum well technology. Appropriate design of epitaxial

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.

SZA-5044

Abstract: ON 4959
Contextual Info: SZA-5044 SZA-5044Z Product Description Sirenza Microdevices’ SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and

VPC3 C

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.

808 nm 100 mw

Abstract: laser diode for free space communication lens free space communication photodiode free space ATC-C500-35 DSASW0011867
Contextual Info: 0,5 W CW Laser Diode Model ATC-C500-35 Key features Applications • • • • • • • • • • • 0.5 W CW output power 35 µm emitting aperture High efficiency MOCVD InAlGaAs quantum well design High reliability Open heat sink, c-mount, ATC and TO-3

LED37FC-SMD5

Contextual Info: LED37FC-SMD5 TECHNICAL DATA Mid-Infrared LED, Flip-Chip Design, SMD Light Emitting Diodes with central wavelength 3.75 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions

LAPD-2-06-17-CHIP

Contextual Info: LAPD-2-06-17-CHIP TECHNICAL DATA Photodiode Chip die InGaAs LAPD-2-06-17-CHIP adopt InGaAs pin structure based on InP by MOCVD method and planar diffusing technology. The active area is Ø 2 mm respectively. Absolute Maximum Ratings Item Reverse Voltage Reverse Current

850 nm

Contextual Info: LDM850/5LT v 1.0 23.02.2015 Description LDM850/5LT is a 850 nm laser module containing a 850 nm MOCVD grown laser diode with quantum well structures. It is an ideal light source for bar code reader, measurement and medical applications. Maximum Ratings Parameter

Contextual Info: LED36-SMD3 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 3.65 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions