16MAY05 Search Results

WTC2303

Contextual Info: WTC2303 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -1.9 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS ON R DS(ON) <240mΩ@V GS =-10V *Rugged and Reliable *Simple Drive Requirement

Si4360DY

Abstract: si4360
Contextual Info: SPICE Device Model Si4360DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

PQFP208

Abstract: AT91C140 PA11 PA12 PA19 ARM processor data flow
Contextual Info: Features • ARM7TDMI ARM® Thumb® Processor Core – In-Circuit Emulator, 36 MHz Operation • Ethernet Bridge • • • • • • • • • • – Dual Ethernet 10/100 Mbps MAC Interface – 16-Kbyte Frame Buffer 1 K-Byte Boot ROM, Embedding a Boot Program

Contextual Info: WTC2307 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -4.0 AMPERS * “G” Lead Pb -Free DRAIN SOUCE VOLTAGE -16 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@V GS=-4.5V *Rugged and Reliable

Si4336DY

Contextual Info: SPICE Device Model Si4336DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4346DY

Contextual Info: SPICE Device Model Si4346DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3499DV

Contextual Info: SPICE Device Model Si3499DV Vishay Siliconix P-Channel 8-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3909DV

Contextual Info: SPICE Device Model Si3909DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

72711

Abstract: Si3469DV
Contextual Info: SPICE Device Model Si3469DV Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4368DY

Contextual Info: SPICE Device Model Si4368DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4348DY

Contextual Info: SPICE Device Model Si4348DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

mv silicon mp3 player

Abstract: 100-W Si91842 Si91842DT-12-T1 Si91842DT-18-T1 Si91842DT-25-T1 Si91842DT-26-T1 Si91842DT-285-T1 Si91842DT-28-T1 Si91842DT-29-T1
Contextual Info: Si91842 Vishay Siliconix 150-mA Low-Noise LDO Regulator With Error Flag and Discharge Option FEATURES D Output—Auto-Discharge In Shutdown Mode D Fixed 1.2, 1.8, 2.5, 2.6, 2.8, 2.85, 3.0, 3.3, 5.0-V Output Voltage Options D Thin SOT23-5 Package D Ultra Low Dropout—130 mV at 150-mA Load

Si3948DV

Contextual Info: SPICE Device Model Si3948DV Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4378DY

Contextual Info: SPICE Device Model Si4378DY Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4362DY

Contextual Info: SPICE Device Model Si4362DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

atmel 638

Abstract: PQFP208 drawing Atmel AT91C140 AT91C140 PQFP208 PA25 PA26 PA20 PA21 tSMC14
Contextual Info: Features • ARM7TDMI ARM® Thumb® Processor Core – In-Circuit Emulator, 36 MHz Operation • Ethernet Bridge • • • • • • • • • • – Dual Ethernet 10/100 Mbps MAC Interface – 16-Kbyte Frame Buffer 1 Kbyte Boot ROM, Embedding a Boot Program

Contextual Info: SiP11203, SiP11204 Vishay Siliconix Synchronous Rectifier Driver with Power Up/Down Control, Output OVP, Error Amplifier and Precision Reference DESCRIPTION The SiP11203/SiP11204 provide the secondary side error amplifier, reference voltage and synchronous

Contextual Info: Product is End of Life 3/2014 SiP11205 Vishay Siliconix Feed-Forward Controller with Primary MOSFET Drivers for Intermediate Bus Converters DESCRIPTION FEATURES SiP11205 is a feed-forward controller for the primary side of a half-bridge intermediate bus converter IBC . It is ideally

GPP3A

Abstract: 202E
Contextual Info: GPP3A THRU GPP3M GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 3.0A FEATURE DO - 201AD Molded case feature for auto insertion High current capability Low leakage current High surge capability High temperature soldering guaranteed 250°C /10sec/0.375" lead length at 5 lbs tension

SI4346DY

Abstract: a26-32
Contextual Info: SPICE Device Model Si4346DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si9181 Vishay Siliconix Micropower 350-mA CMOS LDO Regulator With Error Flag/Power-On-Reset FEATURES Low 150-mV Dropout at 350-mA Load Guaranteed 350-mA Output Current 600-mA Peak Output Current Capability Uses Low ESR Ceramic Output Capacitor Fast Load and Line Transient Response

Contextual Info: Si9185 Vishay Siliconix Micropower 500-mA CMOS LDO Regulator With Error Flag/Power-On-Reset FEATURES D D D D D D D D D D Input Voltage 2 V to 6 V Low 150-mV Dropout at 500-mA Load Available Guaranteed 500-mA Output Current Uses Low ESR Ceramic Output Capacitor

Contextual Info: SiP21102 Vishay Siliconix New Product 150-mA Low-Noise LDO Regulator With Error Flag and Discharge FEATURES D Ultra Low Dropout—130 mV at 150-mA Load D Low Noise—75 mV rms (10-Hz to 100-kHz Bandwidth) D Out−of−Regulation Error Flag (power good) D Shutdown Control

Contextual Info: WTC2303 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -1.9 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS ON R DS(ON) <240mΩ@V GS =-10V *Rugged and Reliable *Simple Drive Requirement