16M-BIT FLASH 48 TSOP Search Results

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE -70/90/12 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA

MBM29LV160TE70

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-5E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE70/90 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (1), 48-pin CSOP and 48-ball FBGA

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE -70/90/12 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE70/90 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE70/90 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA

MBM29F160

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE/BE-55/-70/-90 • GENERAL DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be

FPT-48P-M19

Abstract: FPT-48P-M20 mbm29f160be-70-90 20/MBM29F160TE/BE
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-6E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE70/90 MBM29F160BE70/90 • DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (1) package. The device is designed to be

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE/BE-55/-70/-90 • GENERAL DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-5E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE70/90 MBM29F160BE70/90 • DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be

20/MBM29F160TE/BE

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE70/90 MBM29F160BE70/90 • DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be

MBM29F160BE-90

Abstract: MBM29F160BE90 FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-3E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE55/70/90 MBM29F160BE55/70/90 • DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-5E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE70/90 MBM29F160BE70/90 • DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be

Contextual Info: K9F2808U0C K9F2816U0C FLASH MEMORY Document Title 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 15th 2002 Advance 1.0 TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm -> 63-Ball, 9.0mm x 11.0mm

flash 8m*16bit

Abstract: K9F2808Q0C-HCB0 K9F2808U0C K9F2808U0C-FCB0 K9F2808U0C-HCB0 K9F2808U0C-PCB0 K9F2816Q0C-HCB0 K9F2816U0C-HCB0 K9F2816U0C-PCB0
Contextual Info: K9F2808U0C K9F2816U0C FLASH MEMORY Document Title 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 15th 2002 Advance 1.0 TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm -> 63-Ball, 9.0mm x 11.0mm

K9F2808Q0C-HCB0

Abstract: K9F2808U0C K9F2808U0C-FCB0 K9F2808U0C-HCB0 K9F2808U0C-PCB0 K9F2816Q0C-HCB0 K9F2816U0C-HCB0 K9F2816U0C-PCB0 K9F2808U0C-YCB0
Contextual Info: FLASH MEMORY K9F2808U0C Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 15th 2002 Advance 1.0 TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm -> 63-Ball, 9.0mm x 11.0mm Sep. 5th 2002

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20872-3E PAGE MODE FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29PL160TD/BD-75/90 • DESCRIPTION The MBM29PL160TD/BD is a 16 M-bit, 3.0 V-only Flash memory organized as 2 M bytes of 8 bits each or 1M words of 16 bits each. The MBM29PL160TD/BD is offered in a 48-pin TSOP (1), and 44-pin SOP packages. The

TSOP 48 Package nand memory

Abstract: NAND flash memory nor flash 1Mx16 flash TSOP I KM29N040T KM28U800
Contextual Info: 1. INTRODUCTION <NOR FLASH MEMORY> <NAND FLASH MEMORY> 2. PRODUCT GUIDE < NOR FLASH MEMORY > Density Org. Supply 2.7V-3.6V 8M bit 16M bit Part Number KM28U800 Features 2Mx8 1Mx16 4.5V-5.5V KM28N800 55/70/90 2.7V-3.6V KM28U160 80/90/120ns Package Standard Temp.

Contextual Info: A23L36166/A23L361662 Series 8M X 16 / 16M X 8 BIT CMOS MASK ROM WITH PAGE MODE Preliminary Document Title 8M X 16 / 16M X 8 BIT CMOS MASK ROM WITH PAGE MODE Revision History History Issue Date Remark 0.0 Initial issue September 15, 2008 Preliminary 0.1 Add 56-pin TSOP 1 package type

Contextual Info: A23L36166/A23L361662 Series 8M X 16 / 16M X 8 BIT CMOS MASK ROM WITH PAGE MODE Preliminary Document Title 8M X 16 / 16M X 8 BIT CMOS MASK ROM WITH PAGE MODE Revision History History Issue Date Remark 0.0 Initial issue September 15, 2008 Preliminary 0.1 Add 56-pin TSOP 1 package type

Contextual Info: A23L3616/A23L36161 Series 8M X 16 / 16M X 8 BIT CMOS MASK ROM Document Title 8M X 16 / 16M X 8 BIT CMOS MASK ROM Revision History History Issue Date Remark 0.0 Initial issue November 3, 2003 Preliminary 0.1 Add A23L36161 flash type August 27, 2004 0.2 Modify A23L36161V pin configuration:

A23L36161

Abstract: A23L36161V
Contextual Info: A23L3616/A23L36161 Series Preliminary 8M X 16 / 16M X 8 BIT CMOS MASK ROM Document Title 8M X 16 / 16M X 8 BIT CMOS MASK ROM Revision History History Issue Date Remark 0.0 Initial issue November 3, 2003 Preliminary 0.1 Add A23L36161 flash type August 27, 2004

56-PIN

Abstract: LH28F008SA LH28F016SU
Contextual Info: LH28F016SU FEATURES • • • • • • • 16M 1M x 16, 2M × 8 Flash Memory 56-PIN TSOP TOP VIEW User-Configurable x8 or x16 Operation 3/5 1 56 WP CE1 2 55 WE 70 ns Maximum Access Time NC 3 54 OE 0.32 MB/sec Write Transfer Rate A20 4 53 RY/BY A19

A10C

Abstract: A12C A15C A17C LH28F008SA LH28F016SU
Contextual Info: 16M 1M x 1 6 ,2M x 8 Flash Memory 56-PIN TSOP TO P VIEW • User-Configurable x8 or x16 Operation • User-Selectable 3.3 V or 5 V Vcc • 70 ns Maximum Access Time • 0.32 MB/sec Write Transfer Rate • 100,000 Erase Cycles per Block • 32 Independently Lockable Blocks

KM29U128AIT

Abstract: KM29U128AT NAND flash memory
Contextual Info: Advanced Information FLASH MEMORY KM29U128AT, KM29U128AIT Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1999 Advanced Information The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right