16K X 1 RAM Search Results

CY7C006

Abstract: CY7C016
Contextual Info: fax id: 5207 1 CY7 C0 16 CY7C006 CY7C016 16K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 16K x 8 organization CY7C006 • 16K x 9 organization (CY7C016)

Contextual Info: Integrated DeviceTechnology Inc CM O S STATIC RAM 16K 16K x 1-BIT IDT 6167SA IDT 6167LA FEA T U R ES : DESCRIPTION: • The IDT6167 Is a 16,384-blt high-speed static RAM organized as 16K x 1. The part Is fabricated using IDT’s high-performance, highreliabillty technology-CEM OS. This state-of-the-art technology,

9l reset

Abstract: CY7C026A A13L CY7C036A NC373
Contextual Info: CY7C026A/026B CY7C036A16K x 16/18 Dual-Port Static RAM CY7C026A/026B CY7C036A 16K x 16/18 Dual-Port Static RAM Features • True dual-ported memory cells that allow simultaneous access of the same memory location ■ 16K x 16 organization CY7C026A/026B[1]

9l reset

Abstract: A13L CY7C026A CY7C036A
Contextual Info: CY7C026A/026B CY7C036A16K x 16/18 Dual-Port Static RAM CY7C026A/026B CY7C036A 16K x 16/18 Dual-Port Static RAM Features • True dual-ported memory cells that allow simultaneous access of the same memory location ■ 16K x 16 organization CY7C026A/026B[1]

CY7C128A SRAM

Abstract: 256K x 8 SRAM CY7C128A SRAM CY7C128A CY7C167A CY7C168A CY7C169A CY7C170A CY7C171A CY7C172A EME-6300H
Contextual Info: Qualification Report December, 1994, QTP# 94065 Version 1.0 16K SRAM, 7% SHRINK, R21 TECHNOLOGY MARKETING PART NUMBER DEVICE DESCRIPTION CY7C128A 2K x 8 Static R/W RAM CY7C167A 16K x 1 Static R/W RAM CY7C168A 4K x 4 Static RAM CY7C169A 4K x 4 Static RAM CY7C170A

CY7C128A 16k sram

Abstract: CY7C128A SRAM CY7C128A CY7C167A CY7C168A CY7C169A CY7C170A CY7C171A CY7C172A EME-6300H
Contextual Info: Qualification Report June, 1994, QTP# 91423/93201 Version 1.1 16K Chop Redesign MARKETING PART NUMBER DEVICE DESCRIPTION CY7C128A 2K x 8 Static R/W RAM CY7C167A 16K x 1 Static R/W RAM CY7C168A 4K x 4 Static RAM CY7C169A 4K x 4 Static RAM CY7C170A 4K x 4 Static RAM

TAA 840

Contextual Info: gggffi'N. HIGH-SPEED BiCMOS ECL STATIC RAM 16K 16K x 1-BIT SRAM |jd £ / Integrated Device Technology, Inc. PRELIMINARY IDT10480 IDT100480 IDT101480 FEATURES: DESCRIPTION: • 16,384 x 1-bit organization • Address access time: 3/3.5/4/5/7/8/10/12/15 ns

Contextual Info: L7C167 16K x 1 Static RAM FEATURES DESCRIPTION □ 16K x 1 Static RAM with Separate I/O , Chip Select Powerdown □ Auto-Powerdown Design □ Advanced CMOS Technology □ Highspeed — to 8 ns maximum Q Low Power Operation Active: 135 mW typical at 35 ns

2759

Abstract: 1 bit sram 16K RAM ECL-10K ecl 10K sram 16 bit
Contextual Info: PRELIMINARY IDT10480 IDT100480 IDT101480 HIGH-SPEED BiCMOS ECL STATIC RAM 16K 16K x 1-BIT SRAM  Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 16,384 x 1-bit organization • Address access time: 3/3.5/4/5/7/8/10/12/15 ns • Low power dissipation: 1000mW (typ.)

ic 7483 pin configuration diagram

Abstract: Power Distribution Board with line diagram with d
Contextual Info: IMS1403 CMOS High Performance 16K x 1 Static RAM anm os’ DESCRIPTION FE A T U R E S • INMOS' Very High Speed CMOS •Advanced Process -1.6 Micron Design Rules • 16K x 1 Bit Organization • 2 5,35,45 and 55 nsec Access Times • Fully T TL Compatible

MIL-STD-833C

Contextual Info: mos IMS 1605M: 64K x 1 ÌMS1625M: 1 6 K x 4 ÌMS1629M: 16K x 4 with Output Enable !MS 1626/7M: 16K x 4 with Separate I/Os IMS 1635M: 8K x 8 IMS 1695M: 8K x 9 _ Advance Information FEATURES • INMOS' Very High Speed Double Metal CMOS • Advanced Process-1.2 Micron Design Rules

CY7C09569V

Abstract: ba172 CY7C09579V
Contextual Info: 1 CY7C09569V CY7C09579V PRELIMINARY 3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location • Two Flow-Through/Pipelined devices — 16K x 36 organization CY7C09569V

Contextual Info: V 1' 16K x 4 Static RAM L 7 C 1 6 4 /1 6 5 /1 6 6 DESCRIPTION FEATURES □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ Highspeed — to 8 ns maximum □ Low Power Operation Active: 210 mW typical at 35 ns

L7C167

Contextual Info: L7C167 16K x 1 Static RAM FEATURES □ 16K x 1 Static RAM with Separate I/O , Chip Select Powerdown □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 8 ns maximum □ Low Power Operation Active: 135 mW typical at 35 ns Standby: 100 |aW typical

CY7C4255

Abstract: CY7C4265 CY7C42X5
Contextual Info: CY7C4255, CY7C4265, CY7C4265A 8K/16K x 18 Deep Sync FIFOs Features Functional Description • High Speed, Low Power, First-In First-Out FIFO Memories ❐ 8K x 18 (CY7C4255) [1] ❐ 16K x 18 (CY7C4265/4265A) ■ 0.5 Micron CMOS for Optimum Speed and Power

Contextual Info: mos IMS IMS IMS IMS IMS IMS 1605: 6 4 K x 1 1625: 1 6 K x 4 1629: 16K x 4 with Output Enable / 1626/7:16K x 4 with Separate I/Os 1635: 8K x 8 1695: 8K x 9 FEATURES • INMOS' Very High Speed Double Metal CMOS • Advanced Process-1.2 Micron Design Rules • 64K Bit Devices

CY7C09389V

Contextual Info: 1 CY7C09269V/79V/89V CY7C09369V/79V/89V 3.3V 16K/32K/64K x 16/18 Synchronous Dual-Port Static RAM Features • True Dual-Ported memory cells which allow simultaneous access of the same memory location • 6 Flow-Through/Pipelined devices — 16K x 16/18 organization CY7C09269V/369V

Contextual Info: L7C167 16K x 1 Static RAM Features Description_ □ 16K by 1 Static RAM with separate I/O , Chip Select power down The L7C167 is a high-performance, low-power CMOS static Random Access Memory. The storage circuitry is organized as 16,384 words by 1 bit

Contextual Info: 1 CY7C138AV/144AV/006AV CY7C139AV/145AV/016AV CY7C007AV/017AV PRELIMINARY 3.3V 4K/8K/16K/32K x 8/9 Dual-Port Static RAM Features • True Dual-Ported memory cells which allow simultaneous access of the same memory location • 4K/8K/16K/32K x 8 organizations CY7C0138AV/144AV/

Contextual Info: PRELIM INARY SEMICONDUCTOR 16K x 68 SRAM Module Features Functional Description • High-density 1-megabit SRAM module The CYM1910 is a very high perform­ ance 1-megabit static RAM module organized as 16K words by 68 bits. This module is constructed using seventeen

Contextual Info: .SS;:. . IMS1620 SSSSSSSS 'SSSSSS " " CMOS High Performance 16K x 4 Static RAM iì m o s FEATURES DESCRIPTION • INMOS' Very High Speed CMOS • Advanced Process -1 .6 Micron Design Rules • 16K x 4 Bit Organization ■ 25, 30, 35, 45 and 55 nsec Access Times

Contextual Info: IMS1620 CMOS High Performance 16K x 4 Static RAM mos DESCRIPTION FEATURES • • • • • • • • • • • • INMOS'Very High Speed CMOS Advanced Process -1 .6 Micron Design Rules 16K x 4 Bit Organization 25, 30, 35, 45 and 55 nsec Access Times

L7C164PC20

Contextual Info: L 7 C 1 6 4 /1 6 6 16K x 4 Static RAM DESCRIPTION FEATURES □ 16K x 4 Static RAM with Common I/O □ □ □ □ Auto-Powerdown Design Advanced CMOS Technology High Speed — to 12 ns maximum Low Power Operation Active: 325 mW typical at 25 ns Standby: 400 yiW typical

ez619

Abstract: 55CCT 1ewd
Contextual Info: LOGIC DEVICES INC 2bE » • SStSIQS 0001052 7 ■ r - 16K x 4 Static RAM I FEATURES L 7 C 1 6 4 /1 6 5 /1 6 6 DESCRIPTION | □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown'04 Design □ Advanced CMOS Technology Q High Speed— to 8 ns maximum Q Low Power Operation