16812 MS Search Results

MSM16812

Abstract: 256X8
Contextual Info: O K I sem iconductor M SM 16812 2,048-BIT SERIAL E2PROM FEATURES • CMOS Floating Gate Technology • Single +5-volt supply • Eight pin plastic package • 128 x 16 or 256 x 8 user selectable serial memory • Microwire compatible PIN CONFIGURATION TOP VIEW

Contextual Info: VN750SMP-E High side driver Features Type RDS on IOUT VCC VN750SMP-E 55 mΩ 6A 36 V • ECOPACK : lead free and RoHS compliant ■ Automotive Grade: compliance with AEC guidelines ■ CMOS compatible input ■ On-state open-load detection ■ Off-state open-load detection

16812 ms

Contextual Info: VN750SMP-E High side driver Features Type RDS on IOUT VCC VN750SMP-E 55 m 6A 36 V • ECOPACK : lead free and RoHS compliant • Automotive Grade: compliance with AEC guidelines • CMOS compatible input • On-state open-load detection • Off-state open-load detection

VN750SMP

Abstract: 16812 ISO7637 VN750SMP-E 16812 ms
Contextual Info: VN750SMP-E High side driver Features Type RDS on IOUT VCC VN750SMP-E 55 mΩ 6A 36 V • ECOPACK : lead free and RoHS compliant ■ Automotive Grade: compliance with AEC guidelines ■ CMOS compatible input ■ On-state open-load detection ■ Off-state open-load detection

Contextual Info: SIEMENS 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module HYM64V4005GU-50/-60/-70 HYM64V4045GU-50/-60/-70 HYM72 V4005G U-50/-60/-70 HYM72V4045GU-50/-60/-70 168pin unbuffered DIMM Module with serial presence detect Preliminary Information •

asm 1442

Abstract: MSM6388GS MSM6376GS-BK ML60852ATB MSM6322GS MSM5205RS MSM65P516-NGS-1K MSM6376-GS-BK MSM6376GSBK ML60852TB
Contextual Info: No. 138 144 3411 3413 3414 3415 3419 10681 10956 11042 11307 11308 11309 11696 11697 11698 11701 11906 11907 12207 12208 12209 12210 12756 12758 12759 12761 12765 12770 12772 12805 12808 12814 12815 12832 12835 12837 12846 12847 13924 14267 14500 14503 14507

MSM5205RS

Abstract: ML60852TB MSM6388GS ML60852ATB MSM6258VJS asm 1442 MSC7154 MSM5218RS asm 1441 Asm 1440
Contextual Info: No. 138 144 3411 3413 3414 3415 3419 10681 10956 11042 11307 11308 11309 11696 11697 11698 11701 11906 11907 12207 12208 12209 12210 12756 12758 12759 12761 12765 12770 12772 12805 12808 12814 12815 12832 12835 12837 12846 12847 13924 14267 14500 14503 14507

515 TCI

Abstract: LED wavelength 440 smd TLMB3140 TLMBG3100 TLMTG3100 16-MAR-01
Contextual Info: TLMB/TLMBG/TLMTG31. Preliminary Vishay Telefunken High Intensity SMD LED Color Type Blue Blue Green True Green TLMB3140 TLMBG3100 TLMTG3100 Technology InGaN on SiC InGaN on SiC InGaN on SiC Angle of Half Intensity ±ö 60° 60° 60° Description This device has been designed to meet the increasing

592-3030-013

Abstract: 592-2023-013
Contextual Info: REV. PART POSITION NUMBER 592-2020-002 1 POSITION RED RED 592-2020-013 [H I.EFF] [H I.EFF] 592-2023-002 RED LEVEL 592-XXX-002 PACKAGING SPECIFICATION SCALE 2.000 2 GREEN [H I.EFF] 592-2023-013 MOISTURE 2 o o POCKET SHOWN WITH NO PRODUCT FOR CLARITY o o o o

TLMB3140

Abstract: TLMBG3100 TLMTG3100
Contextual Info: TLMB/TLMBG/TLMTG31. Preliminary Vishay Semiconductors High Intensity SMD LED Color Type Blue Blue Green True Green TLMB3140 TLMBG3100 TLMTG3100 Technology InGaN on SiC InGaN on SiC InGaN on SiC Angle of Half Intensity ±ö 60° 60° 60° Description This device has been designed to meet the increasing

Contextual Info: 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS CNX82A.W, CNX83A.W, SL5582.W & SL5583.W DESCRIPTION PACKAGE DIMENSIONS The CNX82A.W, CNX83A.W, SL5582.W AND SL5583.W, consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.

CNX82

Contextual Info: 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS CNX82A.W, CNX83A.W, SL5582.W & SL5583.W DESCRIPTION PACKAGE DIMENSIONS The CNX82A.W, CNX83A.W, SL5582.W AND SL5583.W, consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.

K1 MARK 6PIN

Abstract: MOC1193S
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC119 DESCRIPTION PACKAGE DIMENSIONS The MOC119 device has a gallium arsenide infrared emitting diode coupled to a silicon darlington phototransistor. PIN 1 ID. 0.270 (6.86) 0.240 (6.10) SEATING PLANE 6 FEATURES

OSRAM OPTO SEMICONDUCTORS GmbH

Contextual Info: VLMTG31. Vishay Semiconductors Standard SMD LED PLCC-2 FEATURES • SMD LED with exceptional brightness • Luminous intensity categorized • Compatible with automatic placement e3 equipment • EIA and ICE standard package • Compatible with IR Reflow, vapor phase and wave

4N33 APPLICATION NOTE

Abstract: 4N32 test circuit K1 6PIN 4N33 "cross reference" 4n33 schematic 4n32 6pin rl 4N29 APPLICATION NOTE
Contextual Info: GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. 4N29 4N30 4N31 4N32 4N33 FEATURES • High sensitivity to low input drive current

4N33 APPLICATION NOTE

Abstract: Fairchild 4N32 4N33 K1 6PIN 4N29
Contextual Info: GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. 4N29 4N30 4N31 4N32 4N33 FEATURES • High sensitivity to low input drive current

ltt673-q1r2

Abstract: nitrogen coupling SMD diode color code Vishay smd diode gs08 VLMTG31 JESD22-A113 manufacturing dashboards smd diode code A LTT673-N2S1
Contextual Info: VLMTG31. Vishay Semiconductors High Intensity SMD LED FEATURES • SMD LED with exceptional brightness • Luminous intensity categorized • Compatible with automatic placement e3 equipment • EIA and ICE standard package • Compatible with IR Reflow, vapor phase and wave

h11dx

Contextual Info: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage

H11DX

Abstract: H11D1 H11D2
Contextual Info: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage

6-PIN marking FA

Abstract: QT Optoelectronics K/bar code phototransistor
Contextual Info: 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M, H11A1M, H11A2M, H11A3M, H11A4M, H11A5M General Purpose 6-Pin Phototransistor Optocouplers Features Description • UL recognized File # E90700, Volume 2 The general purpose optocouplers consist of a gallium

Contextual Info: VLMTG31. Vishay Semiconductors Standard SMD LED PLCC-2 FEATURES • SMD LED with exceptional brightness • Luminous intensity categorized • Compatible with automatic placement e3 equipment • EIA and ICE standard package • Compatible with IR Reflow, vapor phase and wave

H11DX

Abstract: H11D4.300 H11D12 4N38
Contextual Info: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage

Contextual Info: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage

Contextual Info: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage