167A690 Search Results

167A690 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
167A690		BAE Systems	Radiation Hardened Static RAM - 5V	Original	PDF	396.87KB	12

167A690 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor m285 Abstract: 167A690 transistor C013 transistor k450 transistor f630 182A934 cm c013 D650 Contextual Info: 167A690 182A934 32K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness	Original	167A690 182A934 1x106 1x1014 1x109 1x10-11 1x1012 5962H92153 36-Lead 28-Lead transistor m285 167A690 transistor C013 transistor k450 transistor f630 182A934 cm c013 D650	PDF
703 TRANSISTOR smd Contextual Info: 32K x 8 Radiation Hardened Static RAM – 5V 167A690 182A934 Product Description Features Radiation Other • Fabricated with Bulk CMOS 0.8 µm Process • Read/Write Cycle Times ≤30 ns, -55°C to 125°C • Total Dose Hardness through 1 × 106 rad(Si)	Original	167A690 182A934 5962H92153 36-Lead 28-Lead MIL-STD-1835, CDIP2-T28 AS9000, PUBS-01-B22-Q-010 MVA01-012 703 TRANSISTOR smd	PDF
transistor m285 Abstract: transistor C013 SMD A137 transistor k450 cm c013 transistor f630 Contextual Info: 167A690 182A934 32K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness	Original	167A690 182A934 5962H92153 36-Lead 28-Lead MIL-STD-1835, CDIP2-T28 1x106 1x1014 1x109 transistor m285 transistor C013 SMD A137 transistor k450 cm c013 transistor f630	PDF

Catalog Datasheet

Type

Document Tags

PDF

transistor m285

Abstract: 167A690 transistor C013 transistor k450 transistor f630 182A934 cm c013 D650
Contextual Info: 167A690 182A934 32K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

Original

167A690 182A934 1x106 1x1014 1x109 1x10-11 1x1012 5962H92153 36-Lead 28-Lead transistor m285 167A690 transistor C013 transistor k450 transistor f630 182A934 cm c013 D650

PDF

703 TRANSISTOR smd

Contextual Info: 32K x 8 Radiation Hardened Static RAM – 5V 167A690 182A934 Product Description Features Radiation Other • Fabricated with Bulk CMOS 0.8 µm Process • Read/Write Cycle Times ≤30 ns, -55°C to 125°C • Total Dose Hardness through 1 × 106 rad(Si)

Original

167A690 182A934 5962H92153 36-Lead 28-Lead MIL-STD-1835, CDIP2-T28 AS9000, PUBS-01-B22-Q-010 MVA01-012 703 TRANSISTOR smd

PDF

transistor m285

Abstract: transistor C013 SMD A137 transistor k450 cm c013 transistor f630
Contextual Info: 167A690 182A934 32K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

Original

167A690 182A934 5962H92153 36-Lead 28-Lead MIL-STD-1835, CDIP2-T28 1x106 1x1014 1x109 transistor m285 transistor C013 SMD A137 transistor k450 cm c013 transistor f630

PDF