16000A Search Results

Contextual Info: PRELIMINARY 16000ATS/RS 2Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM 29V 16000A T S /R S is a 2 M 2,09 7 ,1 5 2 x8 b it N AND • Organization Flash m em ory w ith a spare 64K (6 5 ,5 3 6 )x8 bit.

Contextual Info: PRELIMINARY 16000AT/R FLASH MEMORY 2 M x 8 B i t NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply The K M 29N 16000AT/R is a 2M 2,09 7 ,1 5 2 x8 b it N AND • Organization Flash m em ory w ith a spare 64K (65,536)x8 bit. Its N AND

Contextual Info: JANUARY 1996 DSF20545SF DS4152-3.0 DSF20545SF FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 1256A IFSM 16000A Qr 1250µC trr 7.0µs • Induction Heating. ■ A.C. Motor Drives. ■ Inverters And Choppers. ■ Welding. ■ High Frequency Rectification.

DSF20545SF45

Abstract: DSF20545SF40 DSF20545SF DSF20545SF41 DSF20545SF42 DSF20545SF43 DSF20545SF44 sine wave ups designing DS4152-4
Contextual Info: DSF20545SF DSF20545SF Fast Recovery Diode Advance Information Replaces March 1998 version, DS4152-3.1 DS4152-4.0 January 2000 KEY PARAMETERS VRRM 4500V IF AV 1256A IFSM 16000A Qr 1250µC trr 7.0µs APPLICATIONS • Induction Heating ■ A.C. Motor Drives

DS4231

Abstract: DDS4231-2 DSF21060SV DSF21060SV55 DSF21060SV56 DSF21060SV57 DSF21060SV58 DSF21060SV59 DSF21060SV60
Contextual Info: DSF21060SV DSF21060SV Fast Recovery Diode Replaces March 1998 version, DDS4231-2.3 DS4231-3.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 1690A IFSM 16000A Qr 1200µC trr 6.5µs • Freewheel Diode. ■ Antiparallel Diode. ■ Inverters. ■ Choppers.

DSF20545SF41

Abstract: DSF20545SF45 DSF20545SF40
Contextual Info: DSF20545SF M ITEL Fast Recovery Diode SEMICONDUCTOR DS4152 - 3.1 March 1998 Supersedes January 1996 version, DS4152 - 3.0 KEY PARAMETERS V RRM 4500V 1256A Jf AV 16000A FSM 1250|lC Qr APPLICATIONS • Induction Heating. ■ A.C. M otor Drives. ■ Inverters And C hoppers.

TIC 2460

Abstract: LIC AGENTS DATA
Contextual Info: @ M ITEL DSF21060SV Fast Recovery Diode SEMICONDUCTOR Supersedes O ctober 1995 version, DS4231 - 2.2 DS4231 - 2.3 APPLICATIONS • KEY PARAMETERS v RRM 6000V 1690A Jf A V 16000A FSM 1200(lC Qr 6.5|is trr Freewheel Diode. ■ Antiparallel Diode. ■ March 1998

DSF20545SF

Abstract: DSF20545SF40 DSF20545SF41 DSF20545SF42 DSF20545SF43 DSF20545SF44 DSF20545SF45
Contextual Info: DSF20545SF DSF20545SF Fast Recovery Diode Advance Information Replaces March 1998 version, DS4152-3.1 DS4152-4.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 1256A IFSM 16000A Qr 1250µC trr 7.0µs • Induction Heating ■ A.C. Motor Drives

DS4231

Contextual Info: DSF21060SV DSF21060SV Fast Recovery Diode Replaces January 2000 version, issue DS4231-3.0 DS4231-4.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 1690A IFSM 16000A Qr 1200µC trr 6.5µs • Freewheel Diode. ■ Antiparallel Diode. ■ Inverters.

LIC AGENTS DATA

Contextual Info: DSF20545SF M ITEL Fast Recovery Diode SEMICONDUCTOR DS4152 - 3.1 March 1998 Supersedes January 1996 version, DS4152 - 3.0 KEY PARAMETERS V RRM 4500V IF AV 1256A 16000A ^FSM 1250(lC Q 7.0|is t. APPLICATIONS • Induction Heating. ■ A.C. Motor Drives.

Contextual Info: 16000A/AL/ALL/ASL CMOSDRAM 16M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tC A C tR C K M 41V 16000A /A L /A L L /A S L -6 60 ns 15 ns 110 ns K M 41V 16000A /A L /A L L /A S L -7 70 ns 20 ns 130 ns

KM29V16000ATS

Contextual Info: KM29V 16000ATS ELECTRONICS Flash 2M X 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte

KM29N16000A

Abstract: DD2423 KM29N16000ATS
Contextual Info: PRELIM INARY FLASH M EM ORY KM 16000ATS/RS 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply The KM 29N 16000A TS /R S is a 2 M 2,09 7 ,1 5 2 x8 b it N AND • O rganization Flash m em ory w ith a spare 6 4K (6 5 ,5 3 6 )x8 bit. Its N AND

Contextual Info: ÜË GEC P L E S S E Y o c t o b e r 1995 SE M IC OND UC TOR S DS4231 -2.2 DSF21060SV FAST RECOVERY DIODE KEY PARAMETERS vR R M 6000V 1690A | A V 16000A FSM 1200(lC Q r 6 .5]lls *rr APPLICATIONS • Freewheel Diode. ■ Antiparallel Diode. ■ f Inverters.

DSF20545SF

Abstract: DSF20545SF40 DSF20545SF41 DSF20545SF42 DSF20545SF43 DSF20545SF44 DSF20545SF45
Contextual Info: DSF20545SF DSF20545SF Fast Recovery Diode Advance Information Replaces January 2000 version, DS4152-4.0 DS4152-5.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 1256A IFSM 16000A Qr 1250µC trr 7.0µs • Induction Heating ■ A.C. Motor Drives ■ Inverters And Choppers

DS4231

Abstract: DDS4231-2 DSF21060SV DSF21060SV55 DSF21060SV56 DSF21060SV57 DSF21060SV58 DSF21060SV59 DSF21060SV60
Contextual Info: DSF21060SV DSF21060SV Fast Recovery Diode Replaces March 1998 version, DDS4231-2.3 DS4231-3.0 January 2000 KEY PARAMETERS VRRM 6000V IF AV 1690A IFSM 16000A Qr 1200µC trr 6.5µs APPLICATIONS • Freewheel Diode. ■ Antiparallel Diode. ■ Inverters. ■ Choppers.

Contextual Info: DSF20545SF DSF20545SF Fast Recovery Diode Advance Information Replaces January 2000 version, DS4152-4.0 DS4152-5.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 1256A IFSM 16000A Qr 1250µC trr 7.0µs • Induction Heating ■ A.C. Motor Drives ■ Inverters And Choppers

Contextual Info: DSF20545SF DSF20545SF Fast Recovery Diode Advance Information Replaces January 2000 version, DS4152-4.0 DS4152-5.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 1256A IFSM 16000A Qr 1250µC trr 7.0µs • Induction Heating ■ A.C. Motor Drives ■ Inverters And Choppers

Contextual Info: NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp, DO5 Features: D High Surge Current Capability D High Voltage Available D Designed for a Wide Range of Applications D Available in Anode−to−Case or Cathode−to−Case Style Ratings and Characteristics:

d28 diode

Abstract: 4000B ANH003A D-13
Contextual Info: PUMA 67 / 77 Pinout SRAM Summary One of the key features of the PUMA Pinned Uncommitted Memory Array product range is its well defined upgrade path. Pin Definition Assuming the relevant address lines are routed on the system board, upgrade may be achieved by simply removing a device and replacing it with the next generation part.

NTE5980

Abstract: NTE5906 NTE5907 NTE6005 "Power rectifier Diode"
Contextual Info: NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp, DO5 Features: D High Surge Current Capability D High Voltage Available D Designed for a Wide Range of Applications D Available in Anode−to−Case or Cathode−to−Case Style Ratings and Characteristics:

A15QS300-4

Abstract: A15QS A15QS8-2 A15QS1500-128 100 Amp current 1300 volt diode 400 volt fuse A15QS100 P243G A15QS2000-128 A15QS2000-128IL
Contextual Info: AMP-TRAP –Form 101 A15QS SEMICONDUCTOR PROTECTION FUSES A15QS Amp-trap® Form 101 Semiconductor Protection fuses were designed for the specific protection of diodes and other semiconductor devices rated 150VAC/DC. The A15QS product line’s compact design is perfect

Contextual Info: WESTCODE An Date:- 10 Oct, 2006 Data Sheet Issue:- 1 IXYS Company Provisional Data Wespack Rectifier Diode Types W5334MK200-W5334MK220 Previous Type No.: W4987MK200-220 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1

Contextual Info: 16000AT, 16000AIT FLASH MEMORY Document Tillo 2M X 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.). 2. Removed reverse type package.