16-MEGABIT X 16 OR X 8 Search Results

M27C160

Abstract: Q15A
Contextual Info: M27C160 16 Megabit 2Meg x 8 or 1Meg x 16 UV EPROM and OTP EPROM FAST ACCESS TIME: 90ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit MASK ROM COMPATIBLE LOW POWER CONSUMPTION – Active Current 70mA at 8MHz – Standby Current 100µA PROGRAMMING VOLTAGE 12.5V ± 0.3V

Contextual Info: S G S -1 H 0 M S 0 N RfflQ @HLIiOT®RD[l©i M27C160 16 Megabit 2Meg x 8 or 1Meg x 16 UV EPROM and OTP ROM • FAST ACCESS TIME - 100ns (Random Address) ■ WORD-WIDE or BYTE-WIDE CONFIGURABLE ■ 16 Megabit MASK ROM COMPATIBLE ■ LOW POWER CONSUMPTION

Contextual Info: /TT SGS-THOMSON ^ 7 # . K !t 0 g ilL i© ìn iS @ K 5 D ( g § M 2 7 C 1 6 0 16 Megabit (2Meg x 8 or 1Meg x 16) UV EPROM and OTP EPROM FAST ACCESS TIME: 90ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit MASK ROM COMPATIBLE LOW POWER CONSUMPTION

27C160

Contextual Info: r i7 S G S -TH O M S O N M27C160 CMOS 16 Megabit 2M x 8 or 1M x 16 UV EPROM ADVANCE DATA • FAST ACC ESS TIME: 150ns ■ W O RD-W IDE or BYTE-W IDE CONFIGURABLE ■ 16 Megabit, 42 Pin, MASK ROM COMPATIBLE ■ LOW POWER CONSUMPTION - Active Current 70m A at 8MHz

Contextual Info: r= 7 S G S -T H O M S O N ^ 7 # . IM O œ ilL iO T tM O tg M 27V160 LOW VOLTAGE 16 Megabit 2Meg x 8 or 1Meg x 16 UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 120ns ■ WORD-WIDE or BYTE-WIDE CONFIGURABLE ■ 16 Megabit MASK ROM REPLACEMENT

Contextual Info: ADVANCE INFORMATION A M D ii Am29PL160C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only High Performance Page Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 16 Mbit Page Mode device ■ — Byte (8-bit) or word (16-bit) mode selectable via BYTE# pin

63-Ball

Abstract: fbe063-63-ball ei 306 20 64
Contextual Info: ADVANCE INFORMATION Am29LV640M 64 Megabit 4 M x 16-Bit or 4 M x 16-Bit/8 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation

o/V29C51400T/V29C51

Contextual Info: MOSEL VITELIC PRELIMINARY V29C51400T/V29C51400B 4 MEGABIT 262,144 x 16 BIT/524,288 x 8 BIT 5 VOLT CMOS FLASH MEMORY Features Description • ■ ■ ■ ■ ■ The V29C51400T/V29C51400B is a high speed 262,144 x 16 bit or 524,288 x 8-bit CMOS flash memory. Writing or erasing the device is done with

Contextual Info: A M D J1 ADVANCE INFORMATION Am29PL160C 16 Megabit 2 M x 8-Bit/I M x 16-Bit CMOS 3.0 Volt-only High Performance Page Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 16 Mbit Page Mode device ■ — Byte (8-bit) or word (16-bit) mode selectable via BYTE# pin

Contextual Info: MOSEL VITELIC PRELIMINARY V29C51400T/V29C51400B 4 MEGABIT 262,144 x 16 BIT/524,288 x 8 BIT 5 VOLT CMOS FLASH MEMORY Features Description • ■ ■ ■ ■ ■ The V29C51400T/V29C51400B is a high speed 262,144 x 16 bit or 524,288 x 8-bit CMOS flash memory. Writing or erasing the device is done with

AM29PL160CB

Contextual Info: Am29PL160C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only High Performance Page Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 16 Mbit Page Mode device — Byte (8-bit) or word (16-bit) mode selectable via BYTE# pin — Page size of 16 bytes/8 words: Fast page read

FND pinout diagram

Abstract: ws256n spansion FND115 S29WS-N S30MS-P S75WS256NDF S75WS256NEG S75WS-N A0-A22 NK 5-4
Contextual Info: S75WS-N Based MCPs Stacked Multi-Chip Product MCP 256 Megabit (16M x 16-bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128 Mb (8M x 16-Bit) RAM Type 4 and 512 Mb (32M x 16-bit) Data Flash or 1 Gb ORNAND Flash Data Sheet PRELIMINARY

Am29Fxxx

Abstract: AM29PL160 AM29PL160C
Contextual Info: Am29PL160C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0V-only High Performance Page Mode Flash DISTINCTIVE CHARACTERISTICS • 16 Mbit Page Mode device — Byte (8-bit) or word (16-bit) mode selectable via BYTE# pin — Page size of 16 bytes/8 words: Fast page read access from random

29PL160C

Abstract: 29pl160
Contextual Info: ADVANCE INFO R M ATIO N AM D i i Am29PL160C 16 Megabit 2 M x 8-bit/1 M x 16-Bit CMOS 3.0 Volt-only High Performance Page Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 16 Mbit Page Mode device ■ — Byte (8-bit) or word (16-bit) mode selectable via

Contextual Info: M O SEL VI TELI C V29C51400T/V29C51400B 4 MEGABIT 262,144 x 16 BIT/524,288 x 8 BIT 5 VOLT CMOS FLASH MEMORY PRELIMINARY Features Description • ■ ■ ■ ■ ■ The V29C51400T/V29C51400B is a high speed 262,144 x 16 bit or 524,288 x 8-bit CMOS flash

Contextual Info: SGS-THOMSON llllMJilLliMWIiei M27V800 LOW VOLTAGE 8 Megabit 1 Meg x 8 or 512K x 16 UV EPROM and OTP EPROM PRELIMINARY DATA LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 110ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 8 Megabit MASK ROM REPLACEMENT LOW POWER CONSUMPTION

TSOP1-48

Contextual Info: CO TS PEM COTS BOO T SECT OR FLASH BOOT SECTOR Austin Semiconductor, Inc. AS29LV016J 16 Megabit 2M x 8-Bit / 1M x 16-Bit CMOS 3.0 Volt-Only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES PERFORMANCE CHARACTERISTICS Single Power Supply Operation

Contextual Info: SGS-THOMSON raD»HlLll e'inM l)ì!lD(ei M 27C 160 16 Mb (2Mb x 8 or 1Mb x 16) UV EPROM and OTP EPROM • 5 V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ FAST ACCESS TIME: 90ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE > 16 Megabit MASK ROM REPLACEMENT > LOW POWER CONSUMPTION

CQFP 240 Aeroflex

Abstract: 5962-9461110 military mcm 1553 5962-9461108 5962-9461109 5962-9461108hxc O28 Package 5962-9461109HM 5962-9461110HMC a1855
Contextual Info: ACT–S512K32 High Speed 16 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8 ■ Input and Output TTL & CMOS Compatible Design ■ Fast 17,20,25,35,45,55ns Access Times

smd code F18

Abstract: act-s512k32n 5962-9461110HTC ACT-S512K32N-017P7Q 5962-9461110 CQFP 80 footprint cqfp 280
Contextual Info: ACT–S512K32 High Speed 16 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8 ■ Input and Output TTL & CMOS Compatible Design ■ Fast 17,20,25,35,45,55ns Access Times

Contextual Info: ACT–S512K32 High Speed 16 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8 ■ Input and Output TTL & CMOS Compatible Design ■ Fast 17,20,25,35,45,55ns Access Times

M27C800

Abstract: M27V800 Q15A
Contextual Info: M27V800 LOW VOLTAGE 8 Megabit 1Meg x 8 or 512K x 16 UV EPROM and OTP EPROM PRELIMINARY DATA LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 110ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 8 Megabit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 70mA at 8MHz

M27C800

Abstract: PLCC44 Q15A
Contextual Info: M27C800 8 Megabit 1Meg x 8 or 512K x 16 UV EPROM and OTP EPROM FAST ACCESS TIME: 90ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 8 Megabit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 70mA at 8MHz – Stand-by Current 100µA PROGRAMMING VOLTAGE 12.5V ± 0.3V

military multichip

Contextual Info: i — i— r 16 Megabit SRAM Multichip Module Features • ■ ■ ■ ■ 4 Low Power CMOS 512K x 8 SRAMs in one MCM Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8 Input and Output TTL & CMOS Compatible Design Fast 17,20,25,35,45,55ns Access Times