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    16 TRANSISTOR SOT23 Search Results

    16 TRANSISTOR SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    ICL7667MJA
    Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    27S185DM/B
    Rochester Electronics LLC 27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 PDF Buy

    16 TRANSISTOR SOT23 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: DISCRETE SEMICONDUCTORS DAT MMBTA92 PNP high-voltage transistor Product specification Supersedes data of 2000 Apr 11 2004 Jan 16 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 PINNING FEATURES • Low current max. 100 mA


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    MMBTA92 MMBTA42. MAM256 SCA76 R75/02/pp6 PDF

    7E SOT23 NXP

    Abstract: 771-MMBTA92215 MAM256
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MMBTA92 PNP high-voltage transistor Product specification Supersedes data of 2000 Apr 11 2004 Jan 16 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 FEATURES PINNING • Low current max. 100 mA


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    MMBTA92 MMBTA42. MMBTA92 SCA76 R75/02/pp6 771-MMBTA92215 7E SOT23 NXP MAM256 PDF

    BF550

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF550 PNP medium frequency transistor Product specification Supersedes data of 1999 Apr 15 2004 Jan 16 Philips Semiconductors Product specification PNP medium frequency transistor BF550 FEATURES PINNING • Low current max. 25 mA


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    BF550 MAM256 SCA76 R75/04/pp6 BF550 PDF

    MMBTA42

    Abstract: MMBTA92 transistor marking code 7e IBM type 1
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MMBTA92 PNP high-voltage transistor Product specification Supersedes data of 2000 Apr 11 2004 Jan 16 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 FEATURES PINNING • Low current max. 100 mA


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    MMBTA92 MMBTA42. MAM256 SCA76 R75/02/pp6 MMBTA42 MMBTA92 transistor marking code 7e IBM type 1 PDF

    ic 2114

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D0 PBSS5140T 40 V low VCEsat PNP transistor Product specification Supersedes data of 2000 Nov 16 2001 Jul 20 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140T FEATURES QUICK REFERENCE DATA


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    PBSS5140T 613514/02/pp12 ic 2114 PDF

    BCX19

    Abstract: BCX17 BCX19 NXP
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BCX19 NPN general purpose transistor Product data sheet Supersedes data of 2000 Jul 28 2004 Jan 16 NXP Semiconductors Product data sheet NPN general purpose transistor BCX19 FEATURES PINNING • High current 500 mA PIN


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    BCX19 BCX17. MAM255 R75/05/pp6 BCX19 BCX17 BCX19 NXP PDF

    AT-30533-TR1

    Abstract: AT-310 AT-30511 AT-30511-BLK AT-30511-TR1 AT-30533 AT-30533-BLK
    Contextual Info: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-30511: 1.1 dB NF, 16 dB GA


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    AT-30511 AT-30533 AT-30511: AT-30533: OT-23 OT-143 AT-30511 AT-30533 OT-23, AT-30533-TR1 AT-310 AT-30511-BLK AT-30511-TR1 AT-30533-BLK PDF

    sot-23 marking code 352

    Abstract: AT-30511 AT-30511-BLK AT-30511-TR1 AT-30533 AT-30533-BLK AT-30533-TR1 AT-310 AT30533
    Contextual Info: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-30511: 1.1 dB NF, 16 dB GA


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    AT-30511 AT-30533 AT-30511: AT-30533: OT-23 OT-143 AT-30511 AT-30533 OT-23, sot-23 marking code 352 AT-30511-BLK AT-30511-TR1 AT-30533-BLK AT-30533-TR1 AT-310 AT30533 PDF

    BSS63

    Abstract: BSS64
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BSS64 NPN high voltage transistor Product data sheet Supersedes data of 2004 Jan 16 2004 Mar 12 NXP Semiconductors Product data sheet NPN high voltage transistor BSS64 FEATURES PINNING • Low current max. 100 mA


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    M3D088 BSS64 BSS63. R75/06/pp6 BSS63 BSS64 PDF

    BSS63

    Abstract: bss63 bm BSS64 high gain PNP POWER TRANSISTOR "SOT23"
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSS63 PNP high-voltage transistor Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 16 NXP Semiconductors Product data sheet PNP high-voltage transistor BSS63 FEATURES PINNING • Low current max. 100 mA PIN • High voltage (max. 100 V).


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    BSS63 BSS64. MAM256 R75/04/pp6 BSS63 bss63 bm BSS64 high gain PNP POWER TRANSISTOR "SOT23" PDF

    BC817 Spice

    Abstract: BC807 spice model BC807 BC817-16 BC817-16-7 BC817-25 BC817-40 J-STD-020A marking code 6B
    Contextual Info: SPICE MODELS: BC817-16 BC817-25 BC817-40 BC817-16 / -25 / -40 NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • · · · · Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary PNP Types Available BC807


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    BC817-16 BC817-25 BC817-40 BC807) OT-23 OT-23, com/datasheets/ap02007 BC817-16-7. BC817-16-7-F. BC817 Spice BC807 spice model BC807 BC817-16-7 BC817-40 J-STD-020A marking code 6B PDF

    BC817

    Abstract: BC807 BC817-16 BC817-25 BC817-40 6a. sot 23 pnp marking 6A
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC817-16 BC817-25 BC817-40 TRANSISTOR NPN SOT-23 FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage


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    OT-23 BC817-16 BC817-25 BC817-40 OT-23 BC807 100mA 500mA 500mA, BC817 BC807 BC817-16 BC817-25 6a. sot 23 pnp marking 6A PDF

    100MHZ

    Abstract: BC817-16 BC817-25 BC817-40
    Contextual Info: BC817-16 BC817-25 BC817-40 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * For general AF applications * High collector current * High current gain * Low collector-emitter saturation voltage SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * BASE Case: Molded plastic


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    BC817-16 BC817-25 BC817-40 OT-23 OT-23 MIL-STD-202E 100MHZ BC817-16 BC817-25 BC817-40 PDF

    100MHZ

    Abstract: 20MHZ BC807-16 BC817
    Contextual Info: BC807-16 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Ldeally suited for automatic insertion * Epitaxial planar die construction * Complementary NPN type available(BC817) SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * BASE Case: Molded plastic Epoxy: UL 94V-O rate flame retardant


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    BC807-16 OT-23 BC817) OT-23 MIL-STD-202E 100MHZ 20MHZ BC807-16 BC817 PDF

    Contextual Info: MOTOROLA O rder this docum ent by M TV16N50E/D SEMICONDUCTOR TECHNICAL DATA Advance Information M TV16N50E TM OS E-FET Pow er Field E ffect Transistor D3PAK for S urface Mount TM OS POWER FET 16 AMPERES 500 VOLTS N-Channel Enhancement-Mode Silicon Gate


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    TV16N50E/D TV16N50E MTV16N50E/D PDF

    bc807

    Abstract: BC807-40 BC807-40 5C BC807-16 BC807-25
    Contextual Info: BC807-16/ BC807-25 BC807-40 General Purpose Transistor PNP Silicon COLLECTOR 3 MARKING DIAGRAM 3 1 BASE 1 2 SOT-23 2 EMITTER Maximum Ratings TA=25 C unless otherwise noted Symbol Value Collector-Emitter Voltage V CEO -45 Unit V Collector-Base Voltage VCBO


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    BC807-16/ BC807-25 BC807-40 OT-23 BC807-16/BC807-25 OT-23 bc807 BC807-40 BC807-40 5C BC807-16 BC807-25 PDF

    BC817

    Abstract: 6C TRANSISTOR MARKING transistor 6c x BC817-16 BC817-25 BC817-40
    Contextual Info: BC817-16/BC817-25 BC817-40 General Purpose Transistor NPN Silicon COLLECTOR 3 3 1 1 BASE 2 2 EMITTER SOT-23 M aximum R atings TA=25 C unless otherwise noted Rating Collector-Emitter Voltage Symbol VCEO Value 45 Unit Vdc Collector-Base Voltage VCBO 50 Vdc


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    BC817-16/BC817-25 BC817-40 OT-23 OT-23 BC817 6C TRANSISTOR MARKING transistor 6c x BC817-16 BC817-25 BC817-40 PDF

    Contextual Info: BC807-16/ BC807-25 BC807-40 General Purpose Transistor PNP Silicon COLLECTOR 3 MARKING DIAGRAM 3 1 BASE * “G” Lead Pb -Free 1 2 SOT-23 2 EMITTER Maximum Ratings ( TA=25 C unless otherwise noted) Symbol Value Collector-Emitter Voltage V CEO -45 Unit V Collector-Base Voltage


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    BC807-16/ BC807-25 BC807-40 OT-23 BC807-16/BC807-25 OT-23 PDF

    Contextual Info: PN2369A / MMBT2369A / MMPQ2369 D iscrete P O W E R & S ig n a l T e c h n o lo g ie s National Semiconductor PN2369A MMBT2369A SOT-23 MMPQ2369 B SOIC-16 Mark: 1S NPN Switching Transistor This device is designed for high speed saturation switching at collector


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    PN2369A MMBT2369A MMPQ2369 PN2369A MMBT2369A OT-23 SOIC-16 PDF

    Q62702-S565

    Abstract: E6327 Q67000-S229 marking BSs marking SRs SOT SRs SOT23
    Contextual Info: BSS 131 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 131 240 V 0.1 A 16 Ω SOT-23 SRs Type BSS 131 BSS 131 Ordering Code Q62702-S565


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    OT-23 Q62702-S565 Q67000-S229 E6327 E6433 Q62702-S565 E6327 Q67000-S229 marking BSs marking SRs SOT SRs SOT23 PDF

    PN2369A

    Abstract: IC NE 556 Rise time 1 ns MMBT2369A MMPQ2369 SOIC-16 HIGH SPEED SWITCHING NPN SOT23
    Contextual Info: PN2369A MMBT2369A MMPQ2369 C B E E E B B E B E C TO-92 BE SOT-23 B C SOIC-16 Mark: 1S C C C C C C C NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings*


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    PN2369A MMBT2369A MMPQ2369 OT-23 SOIC-16 PN2369A MMBT2369A IC NE 556 Rise time 1 ns MMPQ2369 SOIC-16 HIGH SPEED SWITCHING NPN SOT23 PDF

    Tf 227

    Abstract: MMBT2369A MMPQ2369 PN2369A SOIC-16
    Contextual Info: PN2369A MMBT2369A MMPQ2369 Discrete P O W E R & S ig n a l Technologies National I Semiconductor' MMPQ2369 MMBT2369A I PN2369A SOT-23 B SOIC-16 Mark: 1S NPN Switching Transistor T h is d e v ic e is d e s ig n e d for high s p e e d saturatio n sw itching a t collector


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    PN2369A MMBT2369A MMPQ2369 OT-23 SOIC-16 bS01130 0040bc Tf 227 MMBT2369A MMPQ2369 PN2369A SOIC-16 PDF

    BFT92

    Abstract: "MARKING CODE W1*" GHz PNP transistor marking G SOT323 Transistor SOT323 Marking 87 SOT323 WM BFT92W marking L2 SOT23 6
    Contextual Info: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT92W uses the same crystal as the SOT23 version, BFT92. • Gold metallization ensures


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    BFT92W OT323 BFT92W BFT92. OT323. 711002b BFT92 "MARKING CODE W1*" GHz PNP transistor marking G SOT323 Transistor SOT323 Marking 87 SOT323 WM marking L2 SOT23 6 PDF

    RF TRANSISTOR SOT23 5

    Abstract: transistor 20 dB 14 ghz sot23 Bipolar NPN Transistor Bipolar Transistor npn sot23 BFR92 BFR92A BFR93 BFR93A BFS17A transistor with gain 10
    Contextual Info: BFS17A NPN Bipolar Silicon RF Transistor in plastic package SOT23 Attribute Value Configuration UOM NPN Function RF Package SOT23 VCEO max 15 V VCBO max 25 V VEBO max 2.5 V IC max 25 mA 200 mW Ptot max DC current gain Transition frequency min 20 @IE 2 mA @VCE


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    BFS17A BFR92 BFR93A RF TRANSISTOR SOT23 5 transistor 20 dB 14 ghz sot23 Bipolar NPN Transistor Bipolar Transistor npn sot23 BFR92 BFR92A BFR93 BFR93A BFS17A transistor with gain 10 PDF