MMBT5401(RANGE:100-200)
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JCET Group
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MMBT5401 PNP transistor in SOT-23 package, with -150 V collector-emitter voltage, -0.6 A collector current, 0.3 W power dissipation, and DC current gain up to 300, suited for medium power amplification and switching applications. |
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AD-MMBT5401
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JCET Group
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PNP transistor in SOT-23 package, rated for -160V collector-base voltage, -150V collector-emitter voltage, with a continuous collector current of -0.6A and power dissipation of 0.3W, suitable for medium power amplification and switching applications. |
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MMBT5401
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CREATEK Microelectronics
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MMBT5401 is a high voltage NPN transistor in SOT-23 package, featuring 160 V collector-base breakdown voltage, 600 mA collector current, and 300 mW power dissipation, suitable for medium power amplification and switching applications. |
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MMBT5401
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Shenzhen Heketai Electronics Co Ltd
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PNP bipolar transistor in SOT-23 package, with -160 V collector-base voltage, -150 V collector-emitter voltage, -600 mA collector current, 300 mW power dissipation, and DC current gain ranging from 100 to 300. |
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MMBT5401(RANGE:200-300)
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JCET Group
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MMBT5401 is a PNP transistor in SOT-23 package, rated for -150 V VCEO, -0.6 A collector current, with hFE ranging from 100 to 300, suitable for medium power amplification and switching applications. |
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MMBT5401L
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JCET Group
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PNP transistor in SOT-23 package, complementary to MMBT5551, with -160V collector-base voltage, -150V collector-emitter voltage, -0.6A collector current, and 0.3W power dissipation. |
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MMBT5401DW
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Shikues Semiconductor
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Double silicon PNP transistor in SOT-363 Plastic Package, high voltage, complementary Pair with MMBT5551DW. |
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MMBT5401-G(RANGE:200-300)
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JCET Group
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MMBT5401 PNP transistor in SOT-23 package, with -150 V collector-emitter voltage, -0.6 A collector current, 0.3 W power dissipation, and DC current gain up to 300, suited for medium power amplification and switching applications. |
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AD-MMBT5401-H
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JCET Group
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PNP plastic-encapsulated transistor in SOT-23 package, with collector-base voltage of -160 V, collector-emitter voltage of -150 V, continuous collector current of -0.6 A, and power dissipation of 0.3 W, suitable for medium power amplification and switching. |
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MMBT5401
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Microdiode Semiconductor
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SOT-23 Plastic-Encapsulate Transistors, PNP, BASE, EMITTER, COLLECTOR. |
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MMBT5401
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Shandong Jingdao Microelectronics Co Ltd
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MMBT5401 PNP transistor in SOT-23 package, with -160 V collector-base voltage, -150 V collector-emitter voltage, -5 V emitter-base voltage, continuous collector current of -0.6 A, and transition frequency of 300 MHz. |
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MMBT5401
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SLKOR
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High Voltage Transistor, VCEO -150Vdc, VCBO -160Vdc, VEBO -6.0Vdc, Ic -500mAdc, PD 225mW, RΘJA 556°C/W, TJ 150°C. |
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MMBT5401
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AK Semiconductor
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PNP transistor in SOT-23 package with collector-base breakdown voltage of -160 V, DC current gain (hFE) ranging from 100 to 300, and maximum collector current of -0.6 A. |
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MMBT5401
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Shikues Semiconductor
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MMBT5401(RANGE:100-200)
