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    Vishay Small Signal & Opto Products MMBZ4715-V-GS08

    ZENER-DIODE, 0.35W, 5%, SOT-23
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    RS MMBZ4715-V-GS08 Bulk 15,000
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    Vishay Intertechnologies BZX84C15-V-GS08

    Diode Zener Single 15V 5% 300mW Automotive 3-Pin SOT-23 T/R
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    Bristol Electronics BZX84C15-V-GS08 3,125
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    Vyrian BZX84C15-V-GS08 388
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    Vishay Intertechnologies MMSZ4715-V-GS08

    Zener Diode Single 36V 5% 500mW Automotive AEC-Q101 2-Pin SOD-123 T/R
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    Bristol Electronics MMSZ4715-V-GS08 3,000 1
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    Vishay Intertechnologies BZT52B15-V-GS18

    Diode Zener Single 15V 2% 500mW 2-Pin SOD-123 T/R Automotive AEC-Q101
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    Bristol Electronics BZT52B15-V-GS18 2,149 1
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    Vishay Intertechnologies BZT52C15VGS18

    SMALL SIGNAL ZENER DIODE Zener Diode, 15V V(Z), 6.12%, 0.41W, Silicon, Unidirectional
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    ComSIT USA BZT52C15VGS18 10,000
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    15VGS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SPN1443

    Abstract: SPN1443S32RG
    Contextual Info: SPN1443 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1443 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		spn1443spn1443s32rg PDF

    Contextual Info: SENSITRON SEMICONDUCTOR SHD239504 TECHNICAL DATA DATA SHEET 1097, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 400 Volt, 0.3 Ohm, 9.0A MOSFET œ Low RDS on œ Electrically Equivalent to IRF350 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		shd239504irf350 PDF

    shd2184

    Contextual Info: SENSITRON SEMICONDUCTOR SHD218504 TECHNICAL DATA DATA SHEET 1011, REV Formerly Part Number SHD2184/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 400 Volt, 0.3 Ohm, 9.0A MOSFET œ Low RDS on œ Equivalent to IRF350 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		shd2184/a/bshd218504irf350shd2184 PDF

    SPN4412

    Abstract: SPN4412S8RG SPN4412S8TG
    Contextual Info: SPN4412 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4412 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		spn4412spn4412s8rgspn4412s8tg PDF

    IRF350

    Abstract: IRF350 and its equivalent SHD219504
    Contextual Info: SENSITRON SEMICONDUCTOR SHD219504 TECHNICAL DATA DATA SHEET 607, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 400 Volt, 0.3 Ohm, 9.0A MOSFET œ Low RDS on œ Equivalent to IRF350 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		shd219504irf35015vgsirf350 and its equivalent PDF

    SPN2304

    Abstract: MOSFET SPN2304S23RG
    Contextual Info: SPN2304 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2304 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		spn2304mosfetspn2304s23rg PDF

    Contextual Info: SPN4972 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4972 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to


    Original     		spn4972 PDF

    SPN3456

    Abstract: SPN3456ST6RG
    Contextual Info: SPN3456 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3456 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		spn3456spn3456st6rg PDF

    SPN4972B

    Abstract: Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 SPN4972BS8RGB
    Contextual Info: SPN4972B N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4972B is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to


    Original     		spn4972bdual n-channel enhancement mode power mosfet 8a 4spn4972bs8rgb PDF

    8439

    Abstract: Power logic MOSFET SOT-223
    Contextual Info: SPN8439 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8439 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		spn84398439power logic mosfet sot-223 PDF

    SPN8878

    Abstract: 24V 20A mosfet switch
    Contextual Info: SPN8878 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8878 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8878 has been designed specifically to improve the overall


    Original     		spn88780v/20a0v/15a24v 20a mosfet switch PDF

    Contextual Info: AOD4120 N-Channel Enhancement Mode Field Effect Transistor 1.4 General Description Features The AOD4120 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.


    Original     		aod4120o-252draid4120 PDF

    SPN4920

    Abstract: SPN4920S8RG SPN4920S8TG
    Contextual Info: SPN4920 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4920 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to


    Original     		spn4920spn4920s8rgspn4920s8tg PDF

    SPN2304S23RG

    Abstract: SPN2304
    Contextual Info: SPN2304 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2304 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		spn2304spn2304s23rg PDF

    Contextual Info: SPN8878B N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8878B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8878B has been designed specifically to improve the


    Original     		spn8878b0v/20a0v/15a PDF

    SPN4402B

    Contextual Info: SPN4402B N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4402B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		spn4402b0v/12a0v/10a PDF

    IRF350

    Abstract: SHD218504
    Contextual Info: SENSITRON SEMICONDUCTOR SHD218504 TECHNICAL DATA DATA SHEET 1011, REV Formerly Part Number SHD2184/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 400 Volt, 0.3 Ohm, 9.0A MOSFET • Low RDS on • Equivalent to IRF350 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED.


    Original     		shd218504shd2184/a/birf350 PDF

    SPN6561

    Abstract: SOT-23-6L sot 26 Dual N-Channel MOSFET SPN6561S26RG 5V GATE TO SOURCE VOLTAGE MOSFET sot 26 N-Channel MOSFET Z/sot 26 Dual N-Channel MOSFET
    Contextual Info: SPN6561 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN6561 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state


    Original     		spn6561sot-23-6lsot 26 dual n-channel mosfetspn6561s26rg+35v gate to source voltage mosfetsot 26 n-channel mosfetz/sot 26 dual n-channel mosfet PDF

    SPC4516

    Abstract: N & P MOSFET
    Contextual Info: SPC4516 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC4516 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state


    Original     		spc4516n & p mosfet PDF

    SPN4412

    Abstract: SPN4412S8RG SPN4412S8RGB
    Contextual Info: SPN4412 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4412 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		spn4412spn4412s8rgspn4412s8rgb PDF

    Contextual Info: SPN8878 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8878 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8878 has been designed specifically to improve the overall


    Original     		spn88780v/20a0v/15a PDF

    Contextual Info: SENSITRON SEMICONDUCTOR SHD219504 TECHNICAL DATA DATA SHEET 607, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 400 Volt, 0.3 Ohm, 9.0A MOSFET œ Low RDS on œ Equivalent to IRF350 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		shd219504irf35012ustry PDF

    SPN3456

    Abstract: SPN3456ST6RG TSOP-6P
    Contextual Info: SPN3456 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3456 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		spn3456spn3456st6rgtsop-6p PDF

    mosfet pair

    Abstract: SPC4516B N and P MOSFET
    Contextual Info: SPC4516B N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC4516B is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state


    Original     		spc4516bmosfet pairn and p mosfet PDF