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    SPN6561 Datasheets (2)

    SYNC Power
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SPN6561
    		SYNC Power Dual N-Channel Enhancement Mode MOSFET Original PDF 200.52KB 8
    SPN6561S26RG
    		SYNC Power Dual N-Channel Enhancement Mode MOSFET Original PDF 200.52KB 8

    SPN6561 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SPN6561

    Abstract: SOT-23-6L sot 26 Dual N-Channel MOSFET SPN6561S26RG 5V GATE TO SOURCE VOLTAGE MOSFET sot 26 N-Channel MOSFET Z/sot 26 Dual N-Channel MOSFET
    Contextual Info: SPN6561 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN6561 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state


    Original     		spn6561sot-23-6lsot 26 dual n-channel mosfetspn6561s26rg+35v gate to source voltage mosfetsot 26 n-channel mosfetz/sot 26 dual n-channel mosfet PDF

    marking 30 dual mosfet

    Abstract: dual mosfet "marking code 30" sot 26 Dual N-Channel MOSFET SPN6561 SPN6561S26RG 5V GATE TO SOURCE VOLTAGE MOSFET
    Contextual Info: SPN6561 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN6561 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state


    Original     		spn6561marking 30 dual mosfetdual mosfet "marking code 30sot 26 dual n-channel mosfet+2spn6561s26rg5v gate to source voltage mosfet PDF