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    SPN8878

    Abstract: 24V 20A mosfet switch
    Contextual Info: SPN8878 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8878 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8878 has been designed specifically to improve the overall


    Original
    spn88780v/20a0v/15a24v 20a mosfet switch PDF

    Contextual Info: SPN8878B N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8878B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8878B has been designed specifically to improve the


    Original
    spn8878b0v/20a0v/15a PDF

    Contextual Info: SPN8878 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8878 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8878 has been designed specifically to improve the overall


    Original
    spn88780v/20a0v/15a PDF