15OOO Search Results

275 v 595 BC varistor

Abstract: 10K471 14K431 430 NR, VARISTOR 14k471 10k391 14K621 250 v 595 BC varistor 07K471 14K681
Contextual Info: ZINC OXIDE VARISTOR ZINC OXIDE VARISTOR •FEATURES Widely voltage range 18v-1.8kv Fast response to the rapidly increase Vo ltage Musec. Excellent non-linearity voltage Symmetric V-l characteristics Great withstanding surge current (2000A/cm2) No follow-on current

co7f

Abstract: LH28F320BJHE-PTTL90 25FFF
Contextual Info: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F320BJHE-PTTL90 Flash Memory 32M 2M x16/4M x 8 (Model No.: LHF32J04) Spec No.: FM996004A Issue Date: August 25, 1999 SHARP LHF32JO4 I I l HandIe this document carefully for it contains material protected by international copyright law.

rft lautsprecher

Abstract: service-mitteilungen servicemitteilungen skoda VEB Kombinat AEL10 VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN "service-mitteilungen" Leipzig 89 1712
Contextual Info: SERVICE-MITTEILUNGEN V E B RFT I N D U S T R I E V E R T R I E B RUNDFUNK UND FERNSEHEN LRißiiri |radio - television I Ausgabe August 89 22 Seife 1 - ö i'iitteilung aus dem VEB Elektrogeräte Leipzig SER V IC E-A N LEITU N G 6/89 Auto - Einbaulautsprecher

Contextual Info: PGA / ZIF l Open-Top Interstitial NP178-640 01 Socket Series Characteristics Insulation Resistance: Withstanding Voltage: No. of Leads fDesign No. 1,000MQminimum at 500 VDC 700 VAC for 1 Minute Contact Resistance: 30mQ max. at 10mA/20mV Initial) -55‘ C ~ +170'C

d 1879 TRANSISTOR

Abstract: transistor C 2240
Contextual Info: m æ* m RF Products m Microsemi 140 Commerce Drive M ontgom eryville, PA 18938-1013 Tel: 21S 631-3840 TCC2223-3 RF & MiCROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS -RE.QUENCY ¿ ,2 2.3GHz POWER OUT 3.0W POWER GAIN 8,5dB VOLTAGE 24.0V HERMETIC PACKAGE

kluber

Abstract: KLUBER WOLFRACOAT C Thyristor BT 102 water cooled thyristor assembly kluber wolfracoat thyristor ys 150 017 NT102 295kW Thyristor ys 150 103 RC snubber thyristor design
Contextual Info: Technical Information Technische Erläuterungen Für schnelle Thyristoren wird hierzu empfohlen: - C, = 10.47 nF - R, entsprechend 7, = Fl, . C, = 1,0 . .2.0 ps - D, schnelle Diode Der Entladewiderstand R, darf niemals fehlen, weil sich sonst einige Daten der Thyristoren verschlechtern können, z.B. die kritische Spannungssteilheit dv/dt ,. Falls die Beschaltung den Verlauf des Steuerstroms nachteilig beeinflußt, so ist dies bei der Bemessung des

GL6ZR27

Contextual Info: PREPARED BY: DATE: S,m /16/4? I I -UAW30 ELECTRONIC a- COMFWENTS LUKruKn lx994049 GROUP 1 lUl-4 Opto-Electronic SPiKIFICATION DEVICE SPECIFICATION SPEC.No. Devices Division FOR Light Emitting Diode MODEL No. GL6ZR27 1. These specification sheets include materials protected under the copyright of Sharp Corporation “Sharp” .

Contextual Info: 2N6038 SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6038 Darlington Transistor is Designed for General Purpose Medium Power Amplifier and Switching Applications. PACKAGE STYLE TO-126 V o m MAXIMUM RATINGS 4.0 A Ic 8.0 A PEAK P d iss 60 V 40 W @ Te # 25 °C

LT1D90A

Abstract: S-10
Contextual Info: PREPARED BY: %JU APPROVED BY: DATE: “$J /J/&J b+ DATE: sHARp.-:; DG-001006 ,_ 13 pages y=g Jan/WOO ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION RE&-T.ATIVE DIVISIGN: ,. . ‘“\, _ Opto-ElectronicDevices &ision ‘.\ j., ;: 1 ,‘. .