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    Vishay Intertechnologies RWR81S2R15FMB12

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    Vishay Intertechnologies RLR07C7R15FMB14

    Through Hole Resistor, 7.15 ohm, RLR Series, 250 mW, ? 1%, Axial Leaded, 250 V, Metal Film - Bulk (Alt: RLR07C7R15FMB14)
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    Teledyne HiRel QP7C199-15FMB

    STATIC RAM, 32K X 8, 15 NS ACCESS TIME - Rail/Tube (Alt: QP7C199-15FMB)
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    Vishay Intertechnologies RWR80N7R15FMB12

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    Vishay Intertechnologies RLR07C7R15FMBSL

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    15FMB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    P4C150

    Contextual Info: P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM FEATURES Separate Input and Output Ports Full CMOS, 6T Cell Three-State Outputs High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Military) Fully TTL Compatible Inputs and Outputs


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    p4c15024-pin28-pin096-bit+2requires300sram105 PDF

    P4C147

    Contextual Info: P4C147 ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell Single 5V ± 10% Power Supply High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Military) Separate Input and Output Ports Three-State Outputs


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    p4c147sram103oct-05 PDF

    P4C168

    Abstract: P4C169 P4C170
    Contextual Info: P4C168, P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (P4C168 Military) Three Options


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    p4c168p4c169p4c17012/15/20/25/35ns+120/25/35/45/55/70ns PDF

    Contextual Info: P4C147 ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell Single 5V ± 10% Power Supply High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Military) Separate Input and Output Ports Three-State Outputs


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    p4c147sram103oct-05 PDF

    Contextual Info: P4C168, P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (P4C168 Military) Three Options


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    p4c168p4c169p4c17012/15/20/25/35ns+120/25/35/45/55/70ns PDF

    Contextual Info: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Data Retention with 2.0V Supply, 10 A Typical Current P4C164L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial)


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    p4c164p4c164l28-pin100ns+1536-bit PDF

    Contextual Info: P4C164 REVISIONS DOCUMENT NUMBER: DOCUMENT TITLE: SRAM115 P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS REV. ISSUE DATE ORIG. OF CHANGE OR 1997 DAB New Data Sheet A Oct-05 JDB Change logo to Pyramid B Jun-06 JDB Added 28-pin ceramic DIP C Aug-06 JDB Added Lead Free Designation


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    p4c164oct-05jun-06aug-06+2sram11528-pin PDF

    Contextual Info: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Data Retention with 2.0V Supply, 10 A Typical Current P4C164L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial)


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    p4c164p4c164l28-pin100ns+1536-bit PDF

    100DM

    Abstract: 1519B P4C164 P4C164L
    Contextual Info: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)


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    p4c16428-pin100ns32-pin+3100dm1519bp4c164l PDF

    Contextual Info: FT6168, FT6169, FT6170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (FT6168 Military) Three Options


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    ft6168ft6169ft617012/15/20/25/35ns+120/25/35/45/55/70ns PDF

    24-Pin Plastic DIP

    Abstract: P4C147 P4C150
    Contextual Info: P4C150 P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM FEATURES Single 5V ± 10% Power Supply Full CMOS, 6T Cell Separate Input and Output Ports High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Military)


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    p4c15024-pin28-pin096-bit+415dmb15lmb24-pin plastic dipp4c147 PDF

    Contextual Info: FT7C168, FT7C169, FT7C170 HIGH SPEED 4K x 4 SRAM FEATURES Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (FT7C168 Military) Three Options – FT7C168 Low Power Standby Mode


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    ft7c168ft7c169ft7c17012/15/20/25/35ns+120/25/35/45/55/70ns PDF

    Contextual Info: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)


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    p4c164p4c164l28-pin100ns PDF

    Contextual Info: P4C147 ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell Single 5V ± 10% Power Supply High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Military) Separate Input and Output Ports Three-State Outputs


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    p4c147096-bit PDF

    Contextual Info: P4C1981/1981L, P4C1982/1982L REVISIONS DOCUMENT NUMBER: DOCUMENT TITLE: SRAM114 P4C1981 / P4C198L, P4C1982 / P4C1982L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS REV. ISSUE DATE ORIG. OF CHANGE OR 1997 DAB New Data Sheet A Oct-05 JDB Change logo to Pyramid B


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    p4c1981/1981lp4c1982/1982loct-05aug-06+5sram114p4c1981p4c198lp4c1982p4c1982l PDF

    Contextual Info: P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM FEATURES Separate Input and Output Ports Full CMOS, 6T Cell Three-State Outputs High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Military) Fully TTL Compatible Inputs and Outputs


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    p4c15024-pin28-pin096-bit PDF

    Contextual Info: P4C168/P4C168L , P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 Static CMOS RAMs FEATURES Full CMOS, 6T Cell High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (P4C168 Military) Low Power Operation (Commercial) – 715 mW Active


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    p4c168/p4c168lp4c169p4c17012/15/20/25/35ns+220/25/35/45/55/70nsp4c168 PDF

    P4C1981

    Abstract: P4C198 P4C1981L P4C1982L
    Contextual Info: P4C1981/P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Data Retention with 2.0V Supply, 10 µA Typical Current P4C1981L/1982L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial)


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    p4c1981/p4c1981lp4c1982/p4c1982lp4c1981l/1982lp4c1981/l+8p4c1982/l28-pinsram114p4c1981/1981lp4c1981p4c198p4c1981lp4c1982l PDF

    1519B

    Abstract: P4C164 P4C164L
    Contextual Info: P4C164/P4C164L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Single 5V±10% Power Supply High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45 ns (Military)


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    p4c164/p4c164lp4c164l770mw28-pin+4100nsp4c164/164l1519bp4c164 PDF

    FT28C256

    Abstract: dmb A5
    Contextual Info: Features • Fast Read Access Time – 150 ns • Automatic Page Write Operation • • • • • • • • • • – Internal Address and Data Latches for 64 Bytes – Internal Control Timer Fast Write Cycle Times – Page Write Cycle Time: 3 ms or 10 ms Maximum


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    64-byteft28c256dmb a5 PDF

    FT6168

    Abstract: FT6170
    Contextual Info: FT6168, FT6169, FT6170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (FT6168 Military) Three Options


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    ft6168ft6169ft617012/15/20/25/35ns+120/25/35/45/55/70ns PDF

    Contextual Info: P4C168/P4C168L , P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 Static CMOS RAMs FEATURES Full CMOS, 6T Cell High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (P4C168 Military) Low Power Operation (Commercial) – 715 mW Active


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    p4c168/p4c168lp4c169p4c17012/15/20/25/35ns+220/25/35/45/55/70nsp4c168 PDF

    Contextual Info: P4C422 HIGH SPEED 256 x 4 STATIC CMOS RAM FEATURES Separate I/O High Speed Equal Access and Cycle Times – 10/12/15/20/25/35 ns (Commercial) – 15/20/25/35 ns (Military) Fully TTL Compatible Inputs and Outputs Resistant to single event upset and latchup


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    p4c42222-pin24-pin024-bit PDF

    24-Pin Plastic DIP

    Abstract: P4C422
    Contextual Info: P4C422 P4C422 ULTRA HIGH SPEED 256 x 4 STATIC CMOS RAM FEATURES Separate I/O High Speed Equal Access and Cycle Times – 10/12/15/20/25/35 ns (Commercial) – 15/20/25 /35 ns (Military) Fully TTL Compatible Inputs and Outputs Resistant to single event upset and latchup


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    p4c42222-pin24-pin024-bit+3and4c422-10pc24-pin plastic dip PDF