15D TRANSISTOR Search Results

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM15DX-24 MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 15D X -24 Ic Collector current. 15A Vcex Collector-emitter voltage 1200V hFE DC current gain. 75 Insulated Type UL Recognized

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM15DX-2H MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 15D X -2H Ic Collector current. 15A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized

mitsubishi transistor

Abstract: 15D transistor
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM15DX-24 MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 15D X -24 • Ic Collector c u rre n t. 15A • V cex Collector-em itter v o lta g e . 1200V DC current g a in . .,75

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

2SB1366

Abstract: 2sd2058
Contextual Info: SavantIC Semiconductor Product Specification 2SB1366 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2058 ·Low collector saturation voltage: VCE SAT =-1.0V(Max) at IC=-2A,IB=-0.2A ·Collector power dissipation: PC=25W(TC=25 )

15D transistor

Abstract: 2SC4060
Contextual Info: SavantIC Semiconductor Product Specification 2SC4060 Silicon NPN Power Transistors DESCRIPTION •With TO-247 package ·Switching power transistor ·High voltage,high speed PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline TO-247 and symbol

Contextual Info: FINAL Advanced Micro Devices Am 99C 10A 256 X 48 Content Addressable Memory • 256 word x 48-bit Content Addressable Memory CAM — O ptim ized for address decoding in Local Area Networks (LAN) and bridging applications ■ Each CAM word has a 48-bit register and 48-bit

15D transistor

Contextual Info: UNCONTROLLED DOCUMENT REV. A B PART NUMBER REV. O E D - P T - 1 KLB B E.C.N. NUMBER AND REVISION COMMENTS DATE E.C.N. #10BRD R. E.C.N. # 10BR D R . & REDRAWN IN 3D. 12.31.97 5.30. D3 ELECTRO-OPTICAL CHARACTERISTICS TA=25X PARAMETER MIN TYP MAX UNITS SPECTRAL SENSITIVITY

15D transistor

Contextual Info: PART NUMBER REV. O E D - P T - 1 MLB A UNCONTROLLED DOCUMENT 3,55 [0,140] REV. - 4 .2 0 [0,165: 4,00 2.00 0.20 [0.008] A E.C.N. NUMBER AND REVISION COMMENTS DATE E.C.N. #10BRDR. & REDRAWN IN 3D. 5.30.03 [0.157: C0.079] J ELECTRO-OPTICAL CHARACTERISTICS TA = 2 5 X

Contextual Info: , Dna. !j Cx TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A. PN4275 TO-92 NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21.

6676 transistor

Abstract: 6676 PTC6677 TO-247 NPN SILICON POWER TRANSISTORS ptc 870 PTC6676
Contextual Info: 02E 00 43 2 .Y.! 61 159 50 M IC R O S E M I C O R P / P O W E R ¿.-i 02 DE |T , 115^ 50 D 00DD435 ö T"- / 3 - / J pJQ 6676P PTC 6677P PTC 6678P |~ Power Technology Components POWERMODE III S E R IE S NPN SILICON POWER > TRANSISTOR 15 AMPERES O 400 VOLTS

C2499

Abstract: SEF623 sef620 SEF621 F623 LT3C P317 F622
Contextual Info: S G S-THOMSON 07E D | 7 ^2 ^ 2 37 OPlflOaT D ; J3C 1 7 5 2 6 D T '$ < f - /t , 1 \ : N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.

15d smd transistor

Abstract: pnp 9015 SMD 9015 SMD transistor smd marking BA sot-23 9015 sot-23 C 9015 transistor
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CMBT 9015 SOT-23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION

TRANSISTOR SMD A4 L pnp

Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR TRANSISTOR CMBT 9015 SOT-23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3

9015 SMD

Abstract: 15d smd transistor pnp 9015 SMD 9015 transistor specification smd transistor 15d 9015 transistor specification sheet smd 15d SOT-23 9015 transistor sot 23 Diode SOT-23 marking 15d 9015 sot-23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CMBT 9015 SOT-23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION

15d smd transistor

Abstract: CMBT9015
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CMBT 9015 SOT-23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION

english manual for 1192

Abstract: 2SC2780
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

MOSFET IRF 570

Contextual Info: February 1996 FAIRCHILD IM IC D N D U C T D R tm NDS9948 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell

BUZ35

Abstract: t03 package transistor pin dimensions IEC134
Contextual Info: BÜZ35 PowerMOS transistor N AMER PHILIPS/ DI SCR E TE ObE D ^53=131 D O l H b n S • T - 3 Î - 1 July 1987 GENERAL DESCRIPTION N-channel enhancement mode fleld-effect power transistor in a m etal envelope. This device is intended for use in Switched Mode Power Supplies

IRF 730 TRANSISTOR

Abstract: IRF 732 TRANSISTOR irf 730 irf ballast IRF 318 J transistor 733 A ELECTRONIC BALLAST transistor DIAGRAM ELECTRONIC BALLAST 5 LAMP SCHEMATIC 15D transistor 730 mos
Contextual Info: /= * 7 IRF 730/FI-731/FI IRF 732/FI-733/FI S G S -T H O M S O N 7 Æu M Q iL I© T M iü (g § N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE RDS(on) 1.0 n 1.0 ti IRF731 IRF731FI V qss 400 V 400 V 350 V 350 V IRF732 IRF732FI 400 V 400 V 1.5 n

d74c

Contextual Info: NM93C46A National Semiconductor NM93C46A 1,024-Bit Serial Interface, Standard Voltage CMOS EEPROM M IC R O W IR E tm Synchronous Bus General Description Features The NM93C46A is 1,024 bits of CMOS nonvolatile, electri­ cally erasable memory available as either 64 16-bit registers

Contextual Info: NM93C46A FAIRCHILD S E M I C O N D U C T O R TM NM93C46A 1,024-Bit Serial EEPROM MICROWIRE Bus Interface General Description Features The NM93C46A is 1,024 bits of CMOS nonvolatile, electrically erasable memory available as either 6 4 1 6-bit registers or 128 8bit registers. (The organization is determined by the status of the

M06A TRANSISTOR

Abstract: M06A TRANSISTOR 3 pins L0302 15D transistor
Contextual Info: December 1995 Semiconductor NM93C56/C56A 2,048-Bit Serial Interface, Standard Voltage CMOS EEPROM MICROWIRE Synchronous Bus General Description Features The NM93C56/C56A is 2,048 bits Of CMOS non-volatile, electrically erasable memory organized in either 128 16-bit

Philips 2222 050 capacitor

Contextual Info: Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated