15SEP Search Results

S30329

Contextual Info: PRO DU CT NO VIEW B 92810-001 ~ REV OESCRPTION REVO BY OATE A ECR S30H6 RLSO BS LOW 22APR93 6 ECR S30329 BS LOW 15SEP93 r - 72.15 69.09 *0J5 - 60.96 — 3,4 2 PLS - 17,78 — 1.47(6 P LS ) I— t z 8.38 6.60 5.08 n*n n 7.2(2 PLS) $><§><!> $►<&$> $►$►$<&$><$>

e023

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AD 00 REVISIONS LTR DATE DESCRIPTION EC 0G3C 0232 05 J1 REVISED PER DWN BSV JLG 15SEP05 E C O - 09- 02 1826 APVD KK

Contextual Info: r n F CONNECTOR ASSEMBLY EXAMPLARY LOADED A 15SEP03 BC GS REV PER EC OS12-0402-03 CONTACT DIMENSIONS CONTACT d A CONTACT AREA ACTION PIN — AREA A, c c c c c A -CONTACT AREA c LAYOUT e f g h A A A A A A A A c A A A A A A A A c A A A A A A A A C A A A A A A A A C

HD-20

Contextual Info: 4 3 n 2 LOC DIST GP oo R E V IS IO N S LTR DESCRIPTION RELEASED PER EC OS1 3 - 0 2 2 1 - 0 5 DATE DWN APVD 15SEP05 RR JG D r^x C C A B L E C L A M P W E D G E SET, Q U A N T IT Y :2 O N E S E T F O R . 1 9 0 DIA T O . 3 8 0 DIA C A B L E A N D O N E S E T F O R . 3 8 0 DIA

CI 2005

Abstract: CI 2005 a 74001 7400-1 HD-20
Contextual Info: r 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 5 4 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 1 2 ALL RIGHTS RESERVED. LOC DIST GP 00 R E V IS IO N S LTR DESCRIPTION R ELEA SED P ER EC 0 S 1 3 - 0 0 8 7 - 0 5 DATE DWN APVD 15SEP05 GP JG D D HOUSING: FLAME RETARDANT, 9 4 V - 0 RATED,

GR-1217-CORE

Abstract: 15JUL05
Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. REVISIONS LOC DIST AD 00 LTR DATE DWN APVD REV PER EC 0S1 2 —0318 —04 15JU L05 BC GS A E CR —1 0 —0 1 9 0 5 4 15SEP10

Contextual Info: THIS DRAWING IS UNPUBUSHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AF Dl ST REVISIONS 50 LTR DESCRIPTION DATE REV PER 0G 3A— 0361 — 03 DWN APVD MF PD 15SEP03 D D 7 .6 2 L-T+s C C 1 iB /2 \ P f CONTINUOUS

Contextual Info: ECR-05-011016 L.Z S.Y 15SEP '05 LEO ZHOU 15SEP05 T.15SEP05 STEVEN 15SEP05

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 4 5 6 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. REVISIONS LOC DIST AD 00 LTR DESCRIPTION DATE DWN B REVISED PER EC 0-08-01 0373 28A P R 08 C ECR-10- 01 9 05 4 15SEP10 APVD

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. REVISIONS LOC DIST AD 00 LTR DESCRIPTION B C DATE APVD DWN REV PER ECO—0 6 —021 68 10JAN07 EC R—1 0 —0 1 9 0 5 4 15SEP10

BLY-2-4

Abstract: 770680-1 CTL6933-035-003
Contextual Info: 501-231 Qualification Test Report 15Sep09 Rev A All Paragraphs Revised AMPSEAL* Connectors 1. INTRODUCTION 1.1. Purpose Testing was perform ed on AMPSEAL* Connectors to determ ine their conform ance to the requirem ents of Product Specification 108-1329 Revision B.

tyco AMP spec. 109-16

Abstract: 109-74-5 AMP Spec 109-16 44-CONTACT ampseal
Contextual Info: Product Specification 108-1329 15Sep09 Rev B All Paragraphs Revised AMPSEAL* Connectors 1. SCOPE 1.1. Content This specification covers perform ance, tests and quality requirem ents for AMPSEAL* connectors. 1.2. Qualification W hen tests are perform ed on subject product line, procedures specified in Figure 1 shall be used. All

IRFZ48 mosfet driver

Contextual Info: IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Dynamic dV/dt • 175 °C Operating Temperature • Fast Switching

Contextual Info: IRFPC40, SiHFPC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 60 Qgs (nC) 8.3 Qgd (nC) 30 Configuration • Isolated Central Mounting Hole COMPLIANT • Ease of Paralleling

Contextual Info: TPS732xx www.ti.com SBVS037H – AUGUST 2003 – REVISED SEPTEMBER 2005 Cap-Free, NMOS, 250mA Low Dropout Regulator with Reverse Current Protection FEATURES • • • • • • • • • • • DESCRIPTION Stable with No Output Capacitor or Any Value

Contextual Info: IRF820S, SiHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching

mosfet k 2038

Abstract: IRFP450A
Contextual Info: IRFP450A, SiHFP450A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 64 Qgs (nC) 16 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

UDT26A05

Contextual Info: UDT26A05L05 DESCRIPTION UDT26A05L05 are surge rated diode arrays designed to protect high speed data interfaces.This series has been specifically designed to protect sensitive components which are connected to data and transmission lines from overvoltage caused by electrostatic discharge ESD ,electrical fast transients (EFT),

Contextual Info: IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9120, SiHFR9120)

Contextual Info: IRF840S, SiHF840S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching

Contextual Info: IRFP450LC, SiHFP450LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 74 Qgs (nC) 19 Qgd (nC) 35 Configuration Single D Ultra Low Gate Charge Reduced Gate Drive Requirement

jah0212s12

Abstract: JAH0205D15 JAH0205S15
Contextual Info: DC DC 2 Watts JAH Series xppower.com • Low Cost • DIP 24 Package • Operating Temperature 40 °C to +100 °C • Single & Dual Outputs • Optional Metal Case • Optional Isolation to 6000 VDC • 3 Year Warranty Specification Input Input Voltage Range

Contextual Info: IRF520S, SiHF520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature