15SEP03 Search Results

Contextual Info: r n F CONNECTOR ASSEMBLY EXAMPLARY LOADED A 15SEP03 BC GS REV PER EC OS12-0402-03 CONTACT DIMENSIONS CONTACT d A CONTACT AREA ACTION PIN — AREA A, c c c c c A -CONTACT AREA c LAYOUT e f g h A A A A A A A A c A A A A A A A A c A A A A A A A A C A A A A A A A A C

Contextual Info: THIS DRAWING IS UNPUBUSHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AF Dl ST REVISIONS 50 LTR DESCRIPTION DATE REV PER 0G 3A— 0361 — 03 DWN APVD MF PD 15SEP03 D D 7 .6 2 L-T+s C C 1 iB /2 \ P f CONTINUOUS

219413-2

Abstract: PR04 CAT-5E PVC awg 24 PR04 CAT-5E PVC AMP Netconnect awg24 pr04 TE 901 colour code 7035 11801 ftp cat5e SH PVC 219413-8 ral 9010
Contextual Info: 2 THIS DRAWING IS COPYRIGHT F IN I S H E D UNPUBLISHED. 2003 CABLE RELEASED BY R 1P C O R D JACKET C CABLE 0.51 LOC REV I S I ONS 2 LTR P L A T 1 NG BARE ELONGATION 1 5% WI R E 24 AWG DIAMETER NOM. XXXXX AWG HD608 COPPER P L A T 1 NG T I NNED ELONGATION 1 5Z

Si4702DY-T1

Abstract: Si4702DY S-31874 BUS34 25C312
Contextual Info: Si4702DY Vishay Siliconix Load Switch with Level-Shift PRODUCT SUMMARY VDS2 V 30 rDS(on) (W) ID (A) 0.024 @ VGS2 = 10 V 5.5 0.035 @ VGS2 = 4.5 V 4.5 5, 6, 7 3, 4 VIN SO-8 S1 1 8 VHV VON/OFF 2 7 VIN S2 3 6 VIN S2 4 5 VIN VHV VON/OFF S2 Q2 8 Q1 2 1 Top View

Si4340DY

Abstract: Si4340DY-T1
Contextual Info: Si4340DY Vishay Siliconix New Product Dual N-Channel 20-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 20 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 9.6 0.0175 @ VGS = 4.5 V 7.8 0.010 @ VGS = 10 V 13.5 0.0115 @ VGS = 4.5 V

Si6913DQ

Abstract: Si6913DQ-T1 58A5
Contextual Info: Si6913DQ Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.021 @ VGS = -4.5 V -5.8 0.028 @ VGS = -2.5 V -5.0 0.037 @ VGS = -1.8 V -4.4 APPLICATIONS D Load Switch

Contextual Info: TFDU4300 VISHAY Vishay Semiconductors Infrared Transceiver Module SIR, 115.2 kbit/s for IrDA applications Description The TFDU4300 transceiver is an infrared transceiver module compliant to the latest IrDA physical layer standard for fast infrared data communication, supporting IrDA speeds up to 115.2 kbit/s (SIR) and carrier based remote control. The transceiver module

3191-4

Abstract: Si6913DQ Si6913DQ-T1
Contextual Info: Si6913DQ Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.021 @ VGS = -4.5 V -5.8 0.028 @ VGS = -2.5 V -5.0 0.037 @ VGS = -1.8 V -4.4 APPLICATIONS D Load Switch

SUM60N04-05T

Abstract: D2Pak-5
Contextual Info: SUM60N04-05T Vishay Siliconix New Product N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 40 0.0054 @ VGS = 10 V 60a D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode D 175_C Junction Temperature

Contextual Info: SUU50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side APPLICATIONS D DC/DC Converters

Contextual Info: SUU50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side APPLICATIONS D DC/DC Converters D Synchronous Rectifiers

Contextual Info: Si7425DN Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.016 @ VGS = - 4.5 V - 12.6 0.022 @ VGS = - 2.5 V - 10.8 0.029 @ VGS = - 1.8 V - 3.5 D TrenchFETr Power MOSFETS: 1.8-V Rated D New PowerPAKr Package

Contextual Info: Si4336DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.00325 @ VGS = 10 V 25 0.0042 @ VGS = 4.5 V 22 D Ultra Low On-Resistance Using High Density TrenchFETr Gen II Power MOSFET Technology

Contextual Info: Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.057 @ VGS = 10 V 3.5 0.094 @ VGS = 4.5 V 2.8 D TrenchFETr Power MOSFET D 100% Rg Tested - TO-236 (SOT-23) G 1 3 S D 2 Top View Si2306DS (A6)* *Marking Code

photodyne 17xtf

Abstract: 3M Photodyne 17XTF 3M 17xtf rifocs 671r E8025-0633 3M photodyne fibre optic test meter RIFOCS photodyne 11 photodyne
Contextual Info: 502-1170 Engineering Report 10Dec04 Rev O EC 0990-1630-04 2.5 mm Connector Adapters 1. INTRODUCTION 1.1. Purpose The purpose of this test was to determine the conformance of 2.5 mm connector adapters, listed in paragraph 1.4., to the requirements stated within this document.

WF MB 101

Abstract: WF MB 102
Contextual Info: Class 2 X7R 10/16/25/50/100 V Vishay BCcomponents Surface Mount Multilayer Chip Capacitors FEATURES ∑ ∑ ∑ ∑ ∑ Stable class 2 dielectric Four standard sizes High capacitance per unit volume Supplied in tape on reel For high frequency applications

SOT 23 marking code a6 diode

Abstract: Si2306DS Si2306DS-T1
Contextual Info: Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.057 @ VGS = 10 V 3.5 0.094 @ VGS = 4.5 V 2.8 D TrenchFETr Power MOSFET D 100% Rg Tested - TO-236 (SOT-23) G 1 3 S D 2 Top View Si2306DS (A6)* *Marking Code

Contextual Info: RS1A thru RS1K Vishay Semiconductors formerly General Semiconductor Surface Mount Fast Switching Rectifier DO-214AC SMA Reverse Voltage 50 to 800V Forward Current 1.0A Cathode Band 0.065 (1.65) Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) 0.066 MIN.

6188B

Contextual Info: SUD50N06-16 Vishay Siliconix New Product N-Channel 60-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 60 0.016 @ VGS = 10 V D TrenchFETr Power MOSFET ID (A)c APPLICATIONS D TO-252 Drain Connected to Tab G D D Automotive - ABS - EPS - Motor Drives

Contextual Info: SUD50N06-12 Vishay Siliconix New Product N-Channel 60-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 60 0.012 @ VGS = 10 V ID (A)c D TrenchFETr Power MOSFET D 175 _C Junction Temperature 63 APPLICATIONS D Automotive and Industrial D TO-252

M40SZ100W

Abstract: M40SZ100Y M4ZXX-BR00SH SOH28 SOIC16 SOIC28
Contextual Info: M40SZ100Y M40SZ100W 5V or 3V NVRAM SUPERVISOR FOR LPSRAM FEATURES SUMMARY • CONVERT LOW POWER SRAMs INTO NVRAMs ■ 5V OR 3V OPERATING VOLTAGE ■ PRECISION POWER MONITORING and POWER SWITCHING CIRCUITRY ■ AUTOMATIC WRITE-PROTECTION WHEN VCC IS OUT-OF-TOLERANCE

Contextual Info: SUD50N02-09P Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0095 @ VGS = 10 V 20 APPLICATIONS 0.017 @ VGS = 4.5 V 15 D High-Side Synchronous Buck DC/DC Conversion - Desktop - Server VDS (V) 20 D TrenchFETr Power MOSFET

si3440

Contextual Info: Si3440DV Vishay Siliconix New Product N-Channel 150-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D PWM Optimized for Fast Switching In Small Footprint D 100% Rg Tested PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.375 @ VGS = 10 V 1.5 0.400 @ VGS = 6.0 V

GS 069 pwm

Contextual Info: Si7922DN Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.195 @ VGS = 10 V 2.5 0.230 @ VGS = 6 V 2.3 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package, 1/3 the Space of An SO-8 While